• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 춘계학술발표회
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• pp.1287-1288
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• 2005

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 추계학술발표회
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• pp.1073-1074
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• 2005

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 춘계학술발표회
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• pp.1293-1294
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• 2005

• Applied Microscopy
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• 제36권spc1호
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• pp.41-46
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• 2006

Interfacial atomic structure (chemical structure) of a Pd/ZnO hetero junction was investigated by atomic resolution high voltage transmission electron microscopy (ARHVTEM). A misfit dislocation did not work as a stress accommodation mechanism in the ZnO(0001)/Pd (111) interface. But the periodic stress localization occurred in the ZnO($10\bar{1}0$)/(200) interface. The periodicity of the local strain coincided with that of misfit dislocation. Atomic structure image of the ARHVTEM showed that an atomic arrangement across the interface was in the order of O-Zn-Pd. It was shown that mechanical weakness of the ZnO(0001)/Pd(111) interface against cyclic heating is attributable to the absence of the periodic stress localization of the misfit dislocation.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2004년도 추계학술발표회 발표논문집
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• pp.641-642
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• 2004

• 대한전자공학회논문지
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• 제26권8호
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• pp.1203-1210
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• 1989

A cross-sectional transmission electorn microscopy study of the MBE grown GaAs/Al0.3 Ga0.7As layers was carried out at high-resolution so that the atomic arrangement of the well, barrier and the interface could be understood on an atomic level. Results show that the images reveal directly the atomic structure of the GaAs, Al0.3Ga0.3 Ga0.7 As interface is sharply defined but is not smooth on the atomic scale. The roughness arises from the presence of hills with heights of several{002} GaAs interplanar spacings. The atomic arrangement at the interface is almost completely coherent without any structural disorder. Alloy clustering at the interface was not observed.

• Nuclear Engineering and Technology
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• 제38권2호
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• pp.119-128
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• 2006

We start to develop a predictable technology for thermal-hydraulic performance of the RMWR core using an advanced numerical simulation technology. As a part of this technology development, we are developing the advanced interface tracking method to improve the conservation of volume of fluid. The present paper describes a part of the development of the twophase flow simulation code TPFIT with the advanced interface tracking method. The numerical results applied to large-scale water-vapor two-phase flow in tight lattice rod bundles are shown and compared with experimental results. In the results of numerical simulation, a tendency of the predicted void fraction distribution in horizontal plane agreed with the measured values obtained by the advanced neutron radiography technique including the bridge formation of the liquid at the position of adjacent fuel rods where an interval is the narrowest.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1997년도 추계학술발표회논문집(1)
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• pp.19-24
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• 1997

In this study, we extend the application of the interface-matrix(IM) method for reflector modeling to Analytic Flux Expansion Nodal (AFEN) method. This include the modifications of the surface-averaged net current continuity and the net leakage balance conditions for IM method in accordance with AFEN fomular. AFEN-interface matrix (AFEN-IM) method has been tested against ZION-1 benchmark problem. The numerical result AFEN-IM method shows 1.24% of maximum error and 0.42% of root-mean square error in assembly power distribution, and 0.006%Δk of neutron multiplication factor. This result proves that the interface-matrix method for reflector modeling can be useful in AFEN method.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1996년도 춘계학술발표회논문집(3)
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• pp.305-310
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• 1996

This paper concerns the cladding residual stresses in a reactor vessel induced during cooling from the manufacturing temperature down to room temperature Finite element results show that very large stress gradients are present at the interface corner and such stress singularity might lead to local yielding or cladding-base metal debonding.

• 한국진공학회지
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• 제7권s1호
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• pp.57-77
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• 1998

Heteroepitaxial $Y_2O_3$ films were grown on a Si(111) substrate by ionized cluster beam deposition(ICBD) in ultra high vacuum, and its qualities such as crystllitnity, film stress, and morphological characteristics were investigated using the various measurement methods. The crystallinity was investigated by x-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). Interface crystallinity was also examined by Rutherford backscattering spectroscopy(RBS) channeling, transmission electron microscopy(TEM). The stress of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were investigated by atomic force microscopy (AFM) and x-ray scattering method. Comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface reaction between the yttrium metal and SiO2 layer and by ion beam characteristic such as shallow implantation, so that they influenced the film qualities. The film quality was dominantly depended on the characteristic temperature range. In the temperature range from $500^{\circ}C$ to $600^{\circ}C$, the crystallinity was mainly improved and the surface roughness was drastically decreased. On the other hand, in the temperature range from $600^{\circ}C$ to $700^{\circ}C$, the compressive stress and film density were dominantly increased, and the island size was more decreased. Also the surface morphological shape was transformed from elliptical shape to triangular. The film stress existed dominantly at the interface region due to the defects generation.