• Proceedings of the KIEE Conference
• /
• 1994.11a
• /
• pp.219-221
• /
• 1994

Oil-soluble poly(p-phenylene(1-methoxyethylene)), as a precursor of poly(p-phenylenevinylene) (PPV), was synthesized add identified with NMR and FT-IR spectroscopy. The PPV films were prepared by PPV precursor films with a thermal treatment at $250^{\circ}C$ under vacuum, where the PPV precursor films wets formed on various substrates by using Langmuir-Blodgett(LB) method. The characterization of these films was carried out by FT-IR spectroscopy, UV-VIS absorption spectroscopym, and photoluminescence (PL). Atomic Force Microscopy (AFM) has been used to investigate He surface morphology of PPV films.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1347-1348
• /
• 2007

In this paper, ITO gate electrode surface was modified using $O_2$ plasma and organic gate insulating layers were deposited on the ITO surface using plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. The ppMMAs were investigated using atomic force microscopy (AFM) and a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the organic thin film transistors (OTFTs) were investigated using a source measurement unit (SMU: Keithley 2612). Proposed method can be applied to dry-process to fabricate OTFTs during overall fabricating steps.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.12 no.1
• /
• pp.56-61
• /
• 1999

Highly conductive oxide films of BaRuO$_3$ have been grown heteroepitaxially on (100) LaAlO$_3$ single crystalline substrates by using pulsed laser deposition. The films are c-axis oriented with an in-plane epitaxial relationship of <010><100>BaRuO$_3$ // <110>LaAlO$_3$. Atomic force microscopy (AFM) observation shows that they consist of a fine-arranged network of grains and have a mosaic microstructure. Generally temperature-dependent resistivity shows the transition from metallic curve to semiconductor-metallic twofold curve by the deposition conditions for Ru oxide based materials like SrRuO$_3$, CaRuO$_3$, BaRuO$_3$, etc.. This twofold curve comes from the structural similarity of Ru oxide based materials including BaRuO$_3$. We find that the distance of Ru-Ru bonding in the unit cell of BaRuO$_3$ as well as the grain boundary scattering could be the two important causes of these interesting conductive properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.88-91
• /
• 2005

본 논문에서는 비정질 As-Ge-Se-S 박막의 에칭 레이트를 측정하였으며 As-Ge-Se-S 박막에 회절격자를 형성 시킨 후 선택적 에칭을 통한 엠보싱 홀로그램을 제작하였다. NaOH 수용액으로 0.26N, 0.33N, 0.40N 농도로 변화시키며 수행하였으며 에칭 시간에 따른 에칭되는 두께의 변화를 측정하였다. 에칭 레이트는 NaOH 용액의 농도가 0.26N, 0.33N, 0.40N 일 때 각각 $2.5{\AA}/s$, $3.3{\AA}/s$, $3.9{\AA}/s$ 였다. 또한 2차원 엠보싱 회절격자를 형성 시킨후 0.26N NaOH용액으로 60초간 선택적 에칭을 수행하여 AFM(Atomic Force Microscopy) 으로 측정한 결과 선명한 엠보싱 형태의 회절격자를 확인 할 수 있었다.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.1
• /
• pp.43-46
• /
• 2012

Organic solar cell devices were fabricated using poly[9-(1-octylnonyl)-9H-carbazole-2.7-diyl]-2.5-thiophenediyl-2.1.3-benzothiadiazole-4.7-diyl-2.5-thiophenediyl] PCDTBT/ [6,6]-phenyl $C_{71}$ butyric acid methyl ester (PC71BM) active layer deposited by spin coating. Moreover, the relationship between solar cell performance and buffer layer thickness was investigated by spin coating speed and AFM imaging of the buffer layer surface. The performance of the organic solar cell with spin-coated active layer was then evaluated, and the power conversion efficiency of the solar cell was determined to be > 5%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.266-267
• /
• 2007

$Ba_{0.5}Sr_{0.5}TiO_3$(BST) films with different deposition temperatures were deposited on $Al_2O_3$ substrate by Nd:YAG Pulsed Laser Deposition(PLD). The deposition conditions to achieve high crystal structures and dielectric properties were optimized for both techniques. The structural characterization on the BST thin films was performed by X-Ray Diffraction(XRD) and Atomic Force Microscopy (AFM). Effects of post-deposition annealing of BST films were investigated. The best dielectric properties were obtained on $800^{\circ}C$ deposited BST film with post-deposition annealing at $1100^{\circ}C$ in flowing $O_2$ atmosphere for 2hours.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2003.05a
• /
• pp.54-54
• /
• 2003

MgO layer는 POP 패빌 내 유전증을 이온의 스퍼터링으로부터 보호하여 주며, 또한 높은 이차 전자 밤출 계수의 특성을 가지고 있어 구동 및 유지 전압을 낮춰 주는 역할을 한다. 그러나. MgO layer는 $H_20,{\;}CO_2,{\;}N_2,{\;}0_2$ 그리고 $H_2$와 같은 불순물 들을 쉽게 를착하는 단점이 있어, PDP의 특성 및 수명 단축에 영향을 줄 수 있다. 따라서, 본 연구에서는 atmospheric pressure plasma cleaning 과 low pressure i inductively coupled plasma (ICP) cleaning 처리에 의하여, 보호층으로 사용이 되는 MgO layer의 outgassing 특성을 조사하고자 한다. plasma cleaning에 의한 MgO layer 표면의 roughness와 불순물의 변화를 알아보기 위 하여 atomic force microscopy(AFM)과 x-ray p photoelectron spectroscopy(XPS)를 이용하여 측정 하였다. 또한, outgassing의 특성을 분석하기 위하여 MgO layer를 $400^{\circ}C$ 까지 온도를 가하여 온도에 따른 outgassing의 특성을 quadrupole mass spectrometer(QMS)를 이용하여 알아보았다. atmospheric pressure plasma cleaning 에서는 $He/O_2/Ar/N_2$의 gas를 사용하였으며, low pressure ICP cleaning 에 서는 Ar의 gas를 사용하였다. atmospheric pressure plasma cleaning는 low pressure ICP C cleaning과 비교해 더 낮은 outgassing을 관잘 할 수 있었으나. MgO 표면의 roughness는 low pressure ICP cleaning 후 더 낮은 것을 알 수 있었다. 또한 $He/O_2/Ar/N_2$의 gas를 사용 한 atmospheric pressure plasma cleaning 과 $Ar/O_2$의 gas를 사용한 ICP cleaning에서 이 차전자방출계수(SEEC)가 약 1.5~2.5배 증가된 것을 알 수 있었다.

• Journal of Surface Science and Engineering
• /
• v.31 no.3
• /
• pp.171-176
• /
• 1998

Transparent conducting ITO (Indium Tin Oxide) thin films were prepared on soda lime glass by reactive dc magnetron sputtering mothod. The maaterial properties were measured by the X-ray diffraction meter (XRD) and atomic force microscopy (AFM) scanning. As a resuIts, the (400) park for $O_2 gas rate 2% grows uniquely as the preferred orientaon. However, the (400) peak exists at $O_2 gas rate 5% as well as the (222) peak appears abruptly as the main orietation. Both <100> and <111> grain alignments are consisted simultaneously in the XRE pattern of ITO thin films. The electrical charcteristics were esimated by the electrical resistivity, optical transmission, and Hall mobillty, ect. The resistivity of ITO thin film deposited at 4cm from the substrate center is increased from $2\times10^-4$ to $8\times10^-4\Omega$cm as a function of $O_2$ gas pressure (0~5%). The optical transmission curves with a rising of $O_2$ gas rate become shifted into longer wavelength range.

• Journal of the Korean Applied Science and Technology
• /
• v.15 no.1
• /
• pp.91-97
• /
• 1998

Thin films of $Eu(TTA)_3(phen)$, which was known to show red-light emitting properties, were deposited under various deposition condition. The thickness, surface morphology, and photoluminescence(PL) were measured with ${\alpha}$-step profiler, Atomic Force Microscopy(AFM), and PL measurement apparatus. It was found that the thickness of $Eu(TTA)_3(phen)$ film can be controlled precisely by adjusting the amounts of $Eu(TTA)_3(phen)$ in the boat. As the thickness of these films increases, the surface roughness also increases. A structure of $Al/Eu(TTA)_3(phen)(850{\AA})/TPD(600{\AA})/ITO$ was fabricated, Electroluminescence(EL) spectrum of which shows the peak at the wavelength of 618nm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.88-88
• /
• 2010

We synthesized molybdenum thin films deposited by RF magnetron sputtering and physicochemical analysis was performed. The physical and chemical properties of these films were examined with X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The obtained film at the oxygen ratio of 0% showed crystallinity of cubic Mo(110) phase. After the oxygen ratio increased more than 5% in the sputter gas, the molybdenum films were formed as an amorphous phase. The thickness of the Mo thin film was drastically decreased from 1000 nm to ca 70 nm after introduction of oxygen in the sputter gas confirmed by spectroscopic ellipsometer (SE) and scanning electron spectroscopy (SEM). The calculated band gap of the film deduced from SE data increased from 3.17 to 3.63 eV by addition of oxygen in the sputter gas. The roughness of the Mo film was examined with atomic force microscopy (AFM) and it was dramatically decreased by introducing of oxygen during sputtering. XPS results revealed that the ratio of metallic Mo species in the film decreased by the contents of Mo(VI) species increased at the ratio of oxygen increased in the sputter gas and fully oxidized at low content of oxygen in the sputter gas.