• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.25-29
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• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• 반도체디스플레이기술학회지
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• 제13권1호
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• pp.7-12
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• 2014

In this study, we investigate the effects of corona-discharge pre-treatment on the properties of carbon nanotubes (CNTs) which are used as flexible transparent electrodes. The CNTs are deposited on PET (polyethylene terephthalate) substrates using a spray coating method. Prior to the deposition of CNTs, the PET substrates are corona-treated by varying the feeding directions of the PET substrate and the numbers of treatments. The variations in the surface morphologies and roughnesses of the PET substrates due to corona-treatment are characterized via atomic force microscopy (AFM). Dynamic contact angles (DCAs) of the corona-treated PET substrates are measured and analyzed as functions of the treatment conditions. Also, the sheet resistances and visible-range transmittances of the CNTs deposited on PET substrates are measured before and after bending test. The experimental results obtained in this study provide strong evidences that the adhesive forces between CNTs and PET substrates can be substantially enhanced by corona-discharge pretreatment.

• 한국표면공학회지
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• 제37권1호
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• pp.5-12
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• 2004

The enhancement of adhesion for Cu film on polycarbonate (PC) surface with the $Ar/O_2$ gas plasma treatment and dc-bias sputtering was studied. The plasma treatment with this reactive mixture changes the chemical property of PC surface into hydrophllic one, which is shown by the variation of contact angle with surface modification. The micro surface roughness that also gives the high adhesive environment is increased by the $Ar/O_2$ gas plasma treatment. These results were observed distinctly from the atomic force microscopy (AFM). The negative substrate dc-bias effect for the Cu adhesion on PC was also investifated. Accelerated $Ar^{+}$ lons in sheath area of anode bombard the bare surface of PC during initial stage of dc bias sputtering. PC substrate. therefore, has severe roughen and hydrophilic surface due to the physical etching process with more activated functional group. As dc-bias sputtering process proceeds, morphology of Cu film shows better step coverage and dense layer. The results of peel test show the evidence of superiority of bias sputtering for the adhesion between metal Cu and PC.C.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.108-109
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• 2011

유기태양전지를 제작 시에 요구되는 것 중 하나는 active layer의 thermal annealing이다. Thermal thermal annealing 없이는 P3HT의 self-organization이 잘 이뤄지지 않아 비정질의 모습을 보인다. 또한 low band-gap이나 열에 취약한 물질을 사용 시에 태양전지 효율이 낮아지게 된다. 이 점을 착안하여 Active layer에 사용되는 유기용매의 solvent vapor pressure 차이를 이용하여 co-solvent가 되도록 mixing하여, co-solvent로 poly(3-hexylthiopene)(P3HT):[6,6] - phenyl $C_{61}$-butyric acid methyl ester (PCBM)를 blending 하여 active layer로 사용하였으며, 유기태양전지 디바이스 제작 결과 thermal thermal annealing 없이 2.8%까지 도달하였다. X-Ray Diffraction(XRD)과 Atomic Force Microscopy(AFM)를 통하여 P3HT의 결정화가 이루어 졌음을 확인하고 이를 통해 active layer의 thermal annealing이 없이도 P3HT의 self-organization이 이뤄짐을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1450-1451
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• 2006

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ (BLT) ferroelectric fan was fabricated by the sol-gel method. Removal rate and non-uniformity (WIWNU%) were examined by change of silica slurries pH(10.3, 11.3, 12.3). Surface roughness of BLT thin films before and after CMP process was inquired into by atomic force microscopy (AFM). Effects of silica slurries pH(10.3, 11.3, 12.3) were investigated on the CMP performance of BLT film by the surface analysis of X-ray photoelectron spectroscopy(XPS).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1884-1886
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• 2005

KrF 펄스 레이저 증착법(pulsed laser deposition: PLD)으로 ZnO 박막을 증착하여 평판 디스플레이 소자 구동용 박막 트랜지스터(thin film transistor) 소자를 제작하였다. 전도성이 높은 실리콘웨이퍼(c-Si, 하부전극) 기판 위에 LPCVD 법으로 silicon nitride 박막을 절연막으로 형성하고, 다양한 공정 조건에서 펄스 레이저 증착법으로 제작한 ZnO 박막을 증착하여 채널층으로 하였으며, Al 박막을 증착하고 패터닝하여 소스 및 드레인 전극으로 하였다. ZnO 박막의 증착 시에 기판 온도를 다양하게 조절하고 산소 분압을 변화시켜 ZnO 박막의 특성을 조절하였다. 제작된 박막의 표면특성은 AFM(atomic force microscopy)로 분석하고, 결정특성은 XRD(X-ray diffraction)로 조사하였다. ZnO 박막의 전기적 특성은 Hall-van der Pauw 법으로 측정하였고, 광학 투과도(optical transparency)를 UV-visible photometer로 조사하였다. ZnO-TFT 소자는 $10^6$ 수준의 on-off ratio와 $2.4{\sim}6.1cm^2/V{\cdot}s$의 전계효과이동도(field effect mobility)를 보였다.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.32-36
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• 2014

In this study, the etching characteristics of titanium dioxide ($TiO_2$) thin films were investigated with the addition of $N_2$ to CF4/Ar plasma. The crystal structure of the $TiO_2$ was amorphous. A maximum etch rate of 111.7 nm/min and selectivity of 0.37 were obtained in an $N_2/CF_4/Ar$ (= 6:16:4 sccm) gas mixture. The RF power was maintained at 700 W, the DC-bias voltage was - 150 V, and the process pressure was 2 Pa. In addition, the etch rate was measured as functions of the etching parameters, such as the gas mixture, RF power, DC-bias voltage, and process pressure. We used X-ray photoelectron spectroscopy to investigate the chemical state on the surface of the etched $TiO_2$ thin films. To determine the re-deposition and reorganization of residues on the surface, atomic force microscopy was used to examine the surface morphology and roughness of $TiO_2$ thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.120-121
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• 2007

In this paper, ZnO thin films were deposited by pulsed laser deposition (PLD) on $Al_2O_3$ (alumina) at room temperature in various $O_2$ ambient. Rapid thermal annealing (RTA) has been performed at temperatures from $400^{\circ}C$ to $700^{\circ}C$. The effects of temperature and ambient on the structural property of ZnO films were examined by x-ray diffractometer (XRD) and atomic force microscopy (AFM), respectively. The results show that the (002)-oriented ZnO thin films on non-single crystal alumina were obtained in over 30mTorr ambient at all RTA temperatures including room temperature. The foil-width half maximum (FWHM) of (002) peak decreases as the RTA temperature increases, which indicates that ZnO thin films with RTA have improved crystalline quality.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.28-28
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• 2007

Ferroelectric $(Ba_{0.5}Sr_{0.5})TiO_3$ (BST) thin films of thickness 500nm were deposited on $LaAlO_3$, (LAO) substrates by at $800^{\circ}C$. BST films were characterized for structure using X-ray diffraction (XRD). The surface morphology and thickness of BST the films were characterized by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM). We measured the dielectric properties at microwave frequencies (1~3 GHz) using a symmetrical stripline resonator with shorted ends and terahertz frequencies (0.2~2.5 THz) using a time-domain terahertz spectroscopy. The real and imaginary parts of the complex dielectric constant of the BST thin films on LAO substrates were in agreement with those previously reported.