• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제50권8호
• /
• pp.371-375
• /
• 2001

We attempted to fabricate polyurethane derivatives (PU-CN, PU-DCM) LB films by using LB method. Also, we investigated the monolayer behavior at the air-water interface by surface pressure-area (${\pi}$-A) isotherms. The surface morphologies and the physicochemical properties of LB films were investigated by atomic force microscopy(AFM) and UV-vis spectroscopy, respectively. And, the electrical properties of polyurethane derivatives LB films were investigated by using the conductivity and the dielectric constant. In the surface morphologies, physicochemical and electrical properties of polyurethane derivatives LB films, the properties is different as to the polyurethane derivatives, it is considered that this phenomena could be described by the difference of lumophore pendant which was adhered at PU main chain.

• 한국전기전자재료학회논문지
• /
• 제17권3호
• /
• pp.319-322
• /
• 2004

ZnO nanostructures were formed on a Si substrate by off-axis pulsed laser deposition(PLD) system in which a substrate plane was tilted toward a plume propagation direction. Atomic force microscopy (AFM) showed islands of 20∼40 nm width. From the x-ray diffraction (XRD) pattern exhibiting only (002) ZnO peak, the islands observed in AFM image were found to well crystallized. Optical bandgap enlargement from 3.26 eV to 3.35 and 3.47 eV due to the quantum size effect of ZnO nanostructures were observed by Photoluminescence (PL) at room temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.574-577
• /
• 2001

GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

• 한국진공학회지
• /
• 제8권4A호
• /
• pp.450-455
• /
• 1999

We present Photoluminescence (PL) and Atomic Force Microscopy (AFM) image on InAs quantum dots (QDs) having different size which grown by Molecualr Beam Epitaxy (MBE). For different size QDs, analysis of the AFM profiles show that the density of QDs was the maximum value $(1.1\times10^{11}\textrm{/cm}^2)$ at 2.0 ML. In the spectra of QDs, it is found that the peak energy decreases with increasing dot size due to the effect of quantum confinement. Temperature dependence of PL intensities show that the PL is quenching and Red shift as the temperature increase. The FWHM range of 20K~180K is narrowing with increasing temperature. When temperature is over 180K, the line-width starts to in creases with increasing temperature. At last, temperature dependence of the integrated intensities were fit using the Arrehenius-type function for the activation energy. Fit value of the activation energy was increased with increasing QDs-size.

• 한국윤활학회:학술대회논문집
• /
• 한국윤활학회 1998년도 제27회 춘계학술대회
• /
• pp.263-270
• /
• 1998

상용화된 박막 코팅 자기 저장 디스크의 기계역학 및 윤활적 물성치를 도출하기 위하여 Nano-Indentation 과 Nano-Scratch 실험이 수행되었다. 자기 디스크는 원주방향으로 일정한의 분석을 위하여 AFM(Atomic Force Microscopy)이 사용되었다. 텍스처 방향에 따른 표면조도의 변화는 가우스 확률 분포(Gaussian probability distribution)와 Weibull누적 확률 이론(Weibull cumulative probability theory)에 의하여 분석되었다. 표면 조도와 마찰계수는 텍스처의 스캐닝(scanning) 방향에 의존한다는 것이 확인 되었다.

• Journal of Information Display
• /
• 제12권4호
• /
• pp.173-177
• /
• 2011

The alignment film abrasion caused by the rubbing process was quantitatively evaluated via atomic-force microscopy (AFM). First, a patterned alignment film structure, which was molded through the imprint method, was artificially formed. Then, the surface topography of the alignment film was evaluated via AFM after rubbing, and the degree of abrasion of the alignment film was estimated by subtracting the value after rubbing from the value before rubbing. It was recognized that the degree of abrasion increased with an increase in the rubbing strength. The relationship between the number of rubbing cycles and the degree of abrasion of the alignment film was also estimated.

• Transactions on Electrical and Electronic Materials
• /
• 제8권1호
• /
• pp.1-4
• /
• 2007

This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.

• 한국전기전자재료학회논문지
• /
• 제20권10호
• /
• pp.864-868
• /
• 2007

Effect of high-temperature annealing on morphology of fully coherent self-assembled InAs quantum dots' grown on Si (100) substrates at $450^{\circ}C$ by atmospheric pressure metalorganic chemical vapor deposition(APMOCVD) was investigated by atomic force microscopy(AFM). When the dots were annealed at 500 - 600$^{\circ}C$ for 15 sec - 60 min, there was no appreciable change in the dot density but the heights of the dots increased along with the reduction in the diameters. In segregation from the InAs quantum dots and/or from the 2-dimensional InAs wetting layer which was not transformed into quantum dots looked responsible for this change in the dot size. However the change rates remained almost same regardless of annealing time and temperature, which may indicate that the morphological change due to thermal annealing is done instantly when the dots are exposed to high temperature annealing.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.384-384
• /
• 2010

The surface reaction characteristics of Zinc Oxide (ZnO) in $Cl_2/BCl_3$/Ar gas ratio using inductively coupled plasma system were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $Cl_2/BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2$(3 sccm)/$BCl_3$(16 sccm) /Ar(4 sccm) gas mixture. The chemical state of etched surfaces was investigated with X-ray diffraction (XRD) and the etched surface was investigated to the rms by atomic force microscopy (AFM). From these data, the suggestions on the ZnO etch mechanism were made by secondary ion mass spectrometery (SIMS).

• Applied Science and Convergence Technology
• /
• 제23권6호
• /
• pp.387-391
• /
• 2014

Self-assembled InAlAs/AlGaAs quantum dots (QDs) on GaAs substrates were grown by using modified molecular epitaxy beam in Stranski-Krastanov method. In order to study the structural and optical properties of InAlAs/AlGaAs QDs, atomic force microscopy (AFM) and photoluminescence (PL) measurements are conducted. The size and uniformity of QDs have been observed from the AFM images. The average widths and heights of QDs are increased as the deposition time increases. The PL spectra of QDs are composed of two peaks. The PL spectra of QDs were analyzed by the excitation laser power- and temperature-dependent PL, in which two PL peaks are attributed to two predominant sizes of QDs.