• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.553-556
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• 2007

We previously reported a 27.12 MHz inductively coupled plasma source at atmospheric pressure for atomic emission spectrometry based on polymer microchip plasma technology. For the PDMS polymer microchip plasma, molecular emission was observed, but no metallic detection was done. In this experiment, a lab-made electrothermal vaporizer (ETV) with tantalum coil was connected to the microchip plasma for aqueous sample introduction to detect metal ions. The electrode geometry of this microchip plasma was redesigned for better stability and easy monitoring of emission. The plasma was operated at an rf power of 30-70 W using argon gas at 300 mL/min. Gas kinetic temperatures between 800-3200 K were obtained by measuring OH emission band. Limits of detection of about 20 ng/mL, 96.1 ng/mL, and 1.01 μ g/mL were obtained for alkali metals, Zn, and Pb, respectively, when 10 μ L samples in 0.1% nitric acid were injected into the ETV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.41-46
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• 2002

In this work, we studied electrical characteristics and leakage current mechanism of Au/$Ta_2O_5$/Si metal-oxide-semiconductor (MOS) devices. $Ta_2O_5$ thin film (63nm) was deposited by atomic layer deposition (ALD) method at temperature of $235^{\circ}C$. The structures of the $Ta_2O_5$ thin films were examined by X-Ray Diffraction (XRD). From XRD, the structure of $Ta_2O_5$ was single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current-voltage (I-V) characteristics of $Ta_2O_5$ thin film was studied from 300 to 423 K. In ohmic region (<0.5 MVcm${-1}$), the resistivity was $2.4056{\times}10^{14}({\Omega}cm)$ at 348 K. The Schottky emission is dominant in lower temperature range from 300 to 323 K and Poole-Frenkel emission dominant in higher temperature range from 348 to 423 K.

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1967-1971
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• 2012

A hexavalent chromium (Cr (VI)) is one of the hazardous substances regulated by the RoHS. The determination of Cr (VI) in various polymers and printed circuit board (PCB) has been very important. In this study, the three different analytical methods were investigated for the determination of a hexavalent chromium in Acrylonitrile Butadiene Styrene copolymer (ABS) and PCB. The results by three analytical methods were obtained and compared. An analytical method by UV-Visible spectrometer has been generally used for the determination of Cr (VI) in a sample, but a hexavalent chromium should complex with diphenylcarbazide for the detection in the method. The complexation did make an adverse effect on the quantitative analysis of Cr (VI) in ABS. The analytical method using diphenylcarbazide was also not applicable to printed circuit board (PCB) because PCB contained lots of irons. The irons interfered with the analysis of hexavalent chromium because those also could complex with diphenylcarbazide. In this study, hexavalent chromiums in PCB have been separated by ion chromatography (IC), then directly and selectively detected by inductively coupled plasma atomic emission spectrometry (ICP-AES). The quantity of Cr (VI) in PCB was 0.1 mg/kg.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.10
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• pp.41-47
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• 2008

This study aims to obtain machining characteristics during AFM (Atomic force Microscope) machining of silicon wafers and to monitor the machining states using acoustic emission. As in micro scale machining, two distinct regimes of deformation, i. e. ploughing regime and cutting regime were observed. First, the transition between the two regimes are investigated by analyzing the "pile-up" during machining. As far as in process monitoring is concerned, in the ploughing repime, no chips have been formed and related AE RMS values are relatively low, In the mean time, in the cutting regime, the RMS values are significantly higher than the ploughing regime, with apparent chip formation. From the results, we found out that the proposed scheme can be used for the monitoring of nanomachining, especially for the characterization of nanocutting mode transition.

• Analytical Science and Technology
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• v.17 no.5
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• pp.416-422
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• 2004

Time-resolved laser induced breakdown spectroscopy (TRELIBS) has been developed and applied to the qualitative analysis of the component materials of nuclear power plant. The alloy samples used in this work were carbon steels (A106 Gr. B; A336 P11; A335 P22), stainless steels (type 304; type 316) and inconel alloys (Inconel 600; Inconel 690; Inconel 800). Carbon steels can be individually distinguished by the intensity ratio of chromium to iron and molybdenum to iron emission lines observed at the wavelength raging from 485 to 575 nm. Type 316 stainless steel can be easily differentiated from type 304 by identification of the molybdenum emission lines at an emission wavelength ranging from 485 to 575 nm: type 304 does not give any molybdenum emission lines, but type 316 does. The inconel alloys can be individually distinguished by the intensity ratio of Cr/Fe and Ni/Fe emission lines at the wavelength raging from 420 to 510 nm. TRELIBS has been proved to be a powerful analytical technique for direct analysis of alloys due to its non-destructivity and simplicity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.135-136
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• 2012

• Proceedings of the Korean Nuclear Society Conference
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• 2004.10a
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• pp.665-666
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• 2004

• Analytical Science and Technology
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• v.13 no.4
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• pp.474-483
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• 2000

An inductively coupled plasma atomic emission spectrometer/shielding system was specially designed and built for the analysis of radioactive materials. Both of an inductively coupled plasma source and a sample transfer system to be contacted with radioactive materials was installed in a stainless steel glove box. In terms of analytical capability and radiation safety, characteristic feature of the system was investigated. Its applicability to the determination of fission products and corrosion products in the radioactive materials such as spent fuel dissolver solution and the primary coolant of nuclear power reactors was evaluated. In the concentration range $0.01-0.1mgL^{-1}$, the relative standard deviation was found to be less than 5%.

• Journal of The Korean Astronomical Society
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• v.37 no.2
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• pp.61-77
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• 2004

We have searched for HI 21 cm line emission from shocked atomic gas associated with southern supernova remnants (SNRs) using data from the Southern Galactic Plane Survey. Among the 97 sources studied, we have detected 10 SNRs with high-velocity HI emission confined to the SNR. The large velocity and the spatial confinement suggest that the emission is likely from the gas accelerated by the SN blast wave. We also detected 22 SNRs which show HI emission significantly brighter than the surrounding regions over a wide ($>10 km\;s^{-1}$) velocity interval. The association with these SNRs is less certain. We present the parameters and maps of the excess emission in these SNRs. We discuss in some detail the ten individual SNRs with associated high-velocity HI emission.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.541-546
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• 2006

In this study we have investigated cathodoluminescence (CL) and structural properties of thin film $ZnGa_2O_4:Mn$ oxide phosphor by using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), and cathodoluminescence. PL emission peaked at 506 nm was observed from the $ZnGa_2O_4:Mn$ phosphor target and it was attributed to the $^4T_1-^6A_1$ transition in $Mn^{2+}$ ion. The color coordinates of the emission were x = 0.09 and y = 0.67. The $ZnGa_2O_4:Mn$ films showed the excitation spectrum peaked at 294 nm by $Mn^{2+}$ ion absorption. It was found that the higher intensity of CL emission at 505 nm appears to result from the denser and closely-packed structure in $ZnGa_2O_4:Mn$ phosphor films deposited at lower pressures. The CL intensity did not show any systematic dependence on film surface roughness.