• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.130-131
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• 2000

One of the more promising proposals for guiding and focusing neutral atoms involves dark hollow laser beams. When the frequency of the laser is detuned to the blue of resonance, the dipole force the atoms feel in the light confines them to the dark core where the atoms can be transported with minimal interaction with the light. The ability of the all-light atom guides to transport large number of ultracold atoms for long distances without physical walls leads to the possibility of a versatile tool for atom lithography, atom interferometry, atomic spectroscopy as well as for transporting and manipulating Bose-Einstein condensates. Furthermore since the atoms transported in all-light atom guides do not come into contact with matter, they can in principle be used to transport antimatter as well. The ability to vary the core size of the hollow beam makes the all-light atom guide potentially useful for focusing neutral atoms. The atoms could be focused as tight as the core size of the hollow beam at its waist. This new focusing scheme, called the atom funnel, would not show spherical and chromatic aberrations that conventional harmonic focusing suffers from. (omitted)

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.25-33
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• 2007

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.600-604
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• 2003

The light pressure force from an optical standing wave (SW) can focus an atomic beam to submicrometer dimensions. To make the best of this technique it is necessary to find a set of optimal experimental parameters. In this paper we consider theoretically the chromium atoms focusing and demonstrate that the focusing performance depends not only on the strength of but also on the time atoms take to traverse the force field. The general conclusions drawn can easily be applied to other atoms. To analyze the problem we numerically integrate a coupled time-dependent $Schr{\"{o}}dinger$ equation over a wide range of experimental parameters. It is found that an optimal atomic beam speed-laser intensity pair does exist, which could give substantially improved focusing over the one with the experimental parameters given in the literature. It is also shown that the widely used classical particle optics approach can lead to erroneous predictions.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.337-342
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• 2007

In this study, molecular dynamics simulation of nano imprint lithography in which patterned stamp is pressed onto amorphous polyethylene(PE) surface are performed to study the behaviour of polymer. Force fields including bond, angle, torsion, and Lennard Jones potential are used to describe the inter-molecular and intra-molecular force of PE molecules and stamp, substrate. Periodic boundary condition is used in horizontal direction and canonical NVT ensemble is used to control the system temperature. As the simulation results, the behaviour of polymer is investigated during the imprinting process. The mechanism of polymer deformation is studied by means of inspecting the surface shape, volume, density, atom distribution. Deformation of the polymer resist was found for various of the stamp geometry and the alignment state of the polymer molecules.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1637-1642
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• 2010

In this paper, we present the fabrication of a high-quality diffractive-lens mold having submicron patterns, which is suitable for an ultra-slim optical system. In order to fabricate high-quality diffractive lens with a variety of submicron patterns, the multi-alignment method was used; high-resolution electron-beam lithography and FAB plasma etching were carried out to obtain the patterns. The most important key technology in the multi-alignment method is to reduce alignment error, lithography error, and etching error. In this paper, these major fabrication errors were minimized, and a high-quality diffractive lens with a diameter of $267\;{\mu}m$ (NA = 0.25), minimum pattern width of 226 nm, and thickness of 819 nm was successfully fabricated.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.1
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• pp.25-29
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• 2012

The properties of carbon nanotube-metal hybrid nanostructures are critically dependent on the structure and chemistry of the metal-carbon nanotube interface. In this study, the interface between nickel and multi-walled carbon nanotubes (CNTs) has been investigated using physical vapor-deposited (sputter-deposited) nickel onto the surface of freestanding carbon nanotube arrays processed by nano-imprint lithography (NIL). These interfaces have been characterized by transmission electron microscopy and 3D atom probe tomography. In the nickel nanocrystals growing on the CNT surface, a metastable hexagonal $Ni_3C$-types phase appears to be stabilized. The structural stability of the nickel-CNT interface is also discussed and related to potential implications for the properties of these nanocomposites.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.