• Title/Summary/Keyword: Asymmetric capacitor

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Design of SR Drive Using Passive Converter for Hydraulic Pump System (패시브 컨버터를 적용한 유압유니트용 SRM 제어기 설계)

  • Seok, Seung-Hun;Liang, Jianing;Lee, Dong-Hee;Ahn, Jin-Woo
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.863_864
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    • 2009
  • Design and drive characteristics of SR drive for hydraulic pump system using passive converter is presented in this paper. In oder to get the high performance, a simple passive circuit is added in the front-end of a conventional asymmetric converter, which consists of three diodes and one capacitor. This passive converter has the high demagnetization voltage, to reduce the demagnetization time. Futhermore optimal turn-off angle for the proposed passive converter is proposed. According to motor speed and current, an optimal turn-off angle can be achieved by look-up table to reduce torque ripple. The characteristic of proposed hydraulic pump system using passive converter is verified by simulation and experimental results.

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Characteristic of SRM Drive using Multi-level Converter (멀티레벨 인버터를 이용한 SRM 운전특성)

  • Wang, Hui-Jun;Lee, Sang-Hun;Lee, Dong-Hee;Ahn, Jin-Woo
    • Proceedings of the KIEE Conference
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    • 2007.04c
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    • pp.100-102
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    • 2007
  • In this paper, a modified multi-level convert for low cost high speed switched reluctance (SR) drive is proposed The proposed multi-level converter has reduced number of power switches and diodes than that of a conventional asymmetric converter for SRM, and lower voltage rating of the dump capacitor comparing with energy efficient c-dump converter. It can supply five operating modes that is boosted, DC-link, zero, negative bias and negative boosted voltage. The proposed multi-level converter has fast excitation and demagnetization modes of phase current, so dynamic response can be achieved. The proposed multi-level converter is verified by computer simulation and experimental results.

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A Novel Passive Converter for Improving Drive Characteristics of a Single Phase SRM (단상 SRM의 운전 특성 개선을 위한 새로운 패시브 컨버터)

  • Lee, Dong-Hee;Liang, Jianing;Ahn, Jin-Woo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.8
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    • pp.1519-1525
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    • 2009
  • This paper presents a novel passive converter for single phase SRM. The proposed passive converter has additional passive power circuit which is consisted by three diodes and one capacitor in the front-end of conventional asymmetric converter to supply a high negative bias during demagnetization. The high negative bias can reduce the demagnetization time and negative torque from tail current in single phase SRM. So, It can extend positive torque region by the extended turn-off position. In this paper, the structure and operating modes of a novel passive converter are introduced with mathematical model. The proposed single phase SRM using passive converter is verified by the computer simulation and experimental results.

Analysis and Optimization of Differential LC VCO with Filtering Technique in IoGaP/GaAs HBT Technology (InGaP/GaAs HBT 기반의 필터 기술을 이용한 차동 LC 전압조절발전기의 분석 및 최적화)

  • Qian, Cheng;Wang, Cong;Lee, Sang-Yeol;Kim, Nam-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.84-85
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    • 2008
  • In this paper, differential cross coupled LC VCOs with two noise frequency filtering techniques are proposed. Both VCOs are based on symmetric capacitor with asymmetric inductor tank structure. The VCO using low pass filtering technique shows low phase noise of -130.40 dBc/Hz at 1 MHz offset when the center frequency is 1.619 GHz. And the other VCO using band pass filtering technique shows -127.93 dBc/Hz at 1 MHz offset frequency when center frequency is 1.604 GHz. Two noise frequency filtering techniques are approached with different target.

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A Study on the Design of High Efficiency Induction Motor by Grain-oriented Magnetic Cores (방향성 자기재료에 의한 유도전동기의 효율향상설계에 관한 연구)

  • 황영문;이인칠;안진우;박한웅
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.38 no.3
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    • pp.173-181
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    • 1989
  • A split-phase induction motor with asymmetrical magnetizing reactance axes develops starting torque and its efficiency can be high under certain conditions. In this paper, one method of producing the asymmetry of magnetizing reactance axes is described. The grain-oriented silicon steel core is used to produce the asymmetric axes instead of non-oriented silicon steel core which is used in general motors. The optimum design method for the motor is suggested and analyzed. To verify this suggestion, the permanent capacitor run type induction motors are designed to be driven at balanced condition by its asymmetrical effect, and then the oscillating torque due to the asymmetry of motor structures are analyzed. Tests of the sample motor have shown good performance comparable to ordinary types. This motor structure can be used where high effciency and reliability are required, and also the amount of core materials can be reduced due to its high permeability.

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Comparison of Converter Topologies for Single Phase Switched Reluctance Motor (단상 SRM용 컨버터 특성비교)

  • Kim, Tae-Hyoung;Seok, Seung-Hun;Liang, Jianing;Lee, Dong-Hee;Ahn, Jin-Woo
    • Proceedings of the KIEE Conference
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    • 2009.04b
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    • pp.139-142
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    • 2009
  • Comparison of three converter topologies for single phase switched reluctance motor is proposed in this paper. Due to the limitation of do-link voltage, conventional asymmetric converter is difficult to build up enough phase current in the high speed operation. In order to solve this problem, boost converter is used to improve the performance. Two active boost converters are reviewed: one is series-connected type, another is parallel-connected. Otherwise, a novel active boost converter is proposed. The comparison of these converters is based on the voltage raring of capacitor, stability and converter topology. Because the converter selection depends on the motor design, the single phase 6/6 SRM is considered in this paper. Some simulations results are executed. And the results verified the analysis in this paper.

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Torque Ripple Reduction Scheme of Single-Phase SRM with High Power Factor (고역률형 단상 SRM의 토크리플 저감방식)

  • Lee, Zhen-Guo;Liang, Jianing;An, Young-Ju;Ahn, Jin-Woo
    • Proceedings of the KIEE Conference
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    • 2005.10c
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    • pp.122-125
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    • 2005
  • A novel torque ripple reduction scheme of single-phase SRM with high power factor is presented. The proposed SRM drive has one additional active switches in the conventional asymmetric inverter. In order to get a higher power factor, the source current is controlled sinusoidal, And additional excitation current is added from charge capacitor due to torque ripple reduction. The switching period of source and charged voltage is controlled properly to get unity power factor and torque ripple reduction. The characteristics and validity of the proposed scheme is discussed with some simulation results.

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Direct Imaging of Polarization-induced Charge Distribution and Domain Switching using TEM

  • O, Sang-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.99-99
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    • 2013
  • In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

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Design Optimization of Capacitor-less DRAM using zero-temperature coefficient point (트랜지스터의 온도 계수를 고려한 커패시터리스 디램의 설계 최적화)

  • Kyung Hee Kim;Kyeong Min Kim;Yeong Hwan Kim;Jong Beom Im;Gyu Ho Choi;In Man Kang;Young Jun Yoon
    • Journal of IKEEE
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    • v.28 no.3
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    • pp.369-374
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    • 2024
  • This paper addresses the design optimization of capacitorless DRAM(one-transistor DRAM., 1T-DRAM), which has gained attention as a next-generation memory technology. To overcome the limitations of conventional capacitor-based DRAM, an asymmetric dual-gate structure is proposed to enhance retention time and overall performance. The zero-temperature coefficient (ZTC) point is set at 1.25 V to minimize performance degradation due to temperature variations. Current-voltage characteristics were analyzed at various temperatures (300K-400K), confirming stable memory operation at the ZTC point, even under temperature fluctuations. The proposed design demonstrates reliable operation at high temperatures, proving the potential for high-efficiency, highly reliable memory technology. As a result, the 1T-DRAM device can make a significant contribution to the development of next-generation memory devices.

A novel Active Converter of 4-phase SRM for Torque Characteristic Improving (4상 SRM의 토크 특성개선을 위한 컨버터)

  • Wang, Huijun;Park, Tae-Hub;Kim, Tae-Hyoung;Lee, Dong-Hee;Ahn, Jin-Woo
    • Proceedings of the KIPE Conference
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    • 2008.06a
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    • pp.265-267
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    • 2008
  • As generally recognized, the driving performance of a SRM at higher speed will be degraded due to the effects of back electromagnetic force (EMF). This phenomenon can be improved via voltage boosting. So in this paper an improved converter of enhancing the performance for four-phase switched reluctance motor (SRM) is proposed. By using one additional capacitor and switches, an extra controllable boosted voltage can be produced during the rise and fall periods of a motor phase current. Then this active boosted voltage can reduce the effect of EMF on the current, particularly at high speeds. The attractive features of the proposed converter are as follows: obtaining boosted voltage to improve performance of SRM with same numbers of switch and diode as asymmetric converter, having higher control flexibility and capability of boosting voltage compared with passive boosting converters, possessing lower cost and simple control in comparison with existing active boosting converters. The performances of the proposed circuit are verified by the simulation and experiment results.

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