• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.325-331
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• 2007

In this study, the inter-metal dielectric material of FSG was changed by low-k material in $0.13{\mu}m$ foundry-compatible technology (FCT) device process based on fluorinated silicate glass (FSG). Black diamond (BD) was used as a low-k material with a dielectric constant of 2.95 for optimization and yield-improvement of the low-k based device process. For yield-improvement in low-k based device process, some problems such as photoresist (PR) poisoning, damage of low-k in etch/ash/cleaning process, and chemical mechanical planarization (CMP) delamination must be solved. The PR poisoning was not observed in BD based device. The pressure in CMP process decreased to 2.8 psi to remove the CMP delamination for Cu-CMP and USG-CMP. $H_2O$ ashing process was selected instead of $O_2$ ashing process due to the lowest condition of low-k damage. NE14 cleaning after ashing process lot the removal of organic residues in vias and trenches was employed for wet process instead of dilute HF (DHF) process. The similar-state of SRAM yield was obtained in Cu/low-k process compared with the conventional $0.13{\mu}m$ FCT device by the optimization of these process conditions.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.55-60
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• 2017

The supercritical $CO_2$ (sc-$CO_2$) mixture and the sc-$CO_2$-based Photoresist(PR) stripping(SCPS) process were applied to the removal of the post etch/ash PR residue on aluminum patterned wafers and the results were observed by scanning of electron microscope(SEM). In the case of MDII wafers, the carbonized PR was able to be effectively removed without pre-stripping by oxygen plasma ashing by using sc-$CO_2$ mixture containing the optimum formulated additives at the proper pressure and temperature, and the same result was also able to be obtained in the case of HDII wafer. It was found that the efficiency of SCPS of ion implanted wafer improved as the temperature of SCPS was high, so a very large amount of MEA in the sc-$CO_2$ mixture could be reduced if the temperature could be increased at condition that a process permits, and the ion implanted photoresist(IIP) on the wafer was able to be removed completely without pre-treatment of plasma ashing by using the only 1 step SCPS process. By using SCPS process, PR polymers formed on sidewalls of metal conductive layers such as aluminum films, titanium and titanium nitride films by dry etching and ashing processes were removed effectively with the minimization of the corrosion of the metal conductive layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.123.2-123.2
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• 2009

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.290-293
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• 2000

Low frequency(<100Hz) weak magnetic field(<20gauss) is applied axially to an inductively coupled oxygen plasma(ICP), and its plasma characteristics are monitored by OES(Optical Emission Spectroscopy) and Langmuir probe. It is found that periodic magnetic field enhances ashing rate by 25％ and improves its uniformity upto 4.5％ over 8" wafer. From electron energy distribution function, both low and high energy electrons are identified and relative abundancy is found to be controlled by the applied frequency. Moreover, it is observed that ionization and dissociation species are varied with applied frequency. We insert an aluminium baffle in the chamber to get better uniformity and less plasma damage.

• The Journal of the Korean dental association
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• v.12 no.7
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• pp.521-526
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• 1974

This observation was carried out to investigate the inorganic constituents of dental calculus of varying locations and different ages. Supragingival calculus was obtained from 540 patients with the periodontal disease. The results were as follows : 1. The weight loss rate in ashing by aging was the highest in the 2nd decade (63.7%) and followed in order by 3rd decade (60.8%), seventh decade 959.8%), fourth decade (55.9%), sixth decade (52.6%) and fifth decade (43.2%). 2. The weight loss rate by ashing was more prominent in the buccal surfaces of the upper posterior teeth (62.0%) than in the lingual surface of the lower anterior teeth (59.7%). 3. The difference in contents of the inorganic constituents by sex was not remarkable. (male, Ca:373.0 P:333.9, female, Ca: 380.2, P: 339.6 ㎍/mg dry weight) 4. In the dry calulus, contents of the inorganic constituents were as follows: Ca:325.8 P:269.10 Mg:1.21 Na:8.44 K:1.32, Zn:0.67 ㎍/mg. 5. The Ca/P ratio was the lowest in the upper anterior region (1.11) and the highest in the lower posterior region (1.29) and the average was 1.20.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.31 no.2
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• pp.77-85
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• 1999

A study on the thermal stability of commonly used six fillers, such as titanium dioxide, silica, ground calcium carbonate, zeolite, and, clay, showed that most fillers except titanium dioxide were strongly effected by heat treatment. Therefore, the present methods for determination of ash in paper give weight loss due to thermal decomposition of fillers. It was found that a paper ashing method at a temperature of 40$0^{\circ}C$ allows most fillers in their original and undecomposed from. Results presented in this paper also show that X-ray diffraction can be used for qualitative determination of mixed fillers and coating pigments in a paper sheet.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.95-100
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• 1998

A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.163-170
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• 2006

By removing sacrificial layer through ashing process, movable MEMS structure on substrate can be fabricated in surface micromachining. However, MEMS structure includes, during the ashing process, the warping or buckling effects due to stress gradient along the vertical direction of thin film. In this study, we presented method for counteracting the unwanted deflection of MEMS structure and designed using character of deposit process to overcome limited design conditions. Unit cell patterns were designed with character of deposit shape, and their final shapes were adopted using Finite Element Method. Finally, RF MEMS switch was fabricated by surface micro machining as test vehicles. We checked out that alleviation effect for deformation of switch improved by 35%.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.308-308
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.85-85
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• 2007