• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.504-509
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• 2011

The conducting current of non-uniform plasma immersed electrode consists of ion current and secondary electron emission current caused by the impinging ion current. The ion current is determined by the ion dose passing through the sheath in front of electrode and the ion distribution in front of the electrode plays an important role in the secondary electron emission. The investigation of the distributed plasma and secondary electron effect on electrode ion current was carried out as the stainless steel electrode plugged with quartz tube was immersed in the inductively coupled Ar plasma using the antenna powered by 1 kw and the density profile was measured. After that, the negative voltage was applied by 1 kV~6 kV to measure the conduction current for the analysis of ion current.

• 열처리공학회지
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• 제18권4호
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• pp.229-234
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• 2005

Effect of incident ion beam energy on microstructure and adhesion behavior of TiN thin films were studied. Without ion beam assist, TiN film showed (111) growth mode which was thought to have the lowest deformation energy. As the ion beam assist energy increased, TiN film growth mode was changed from (111) to (200) mode. On the Si(100) substrate the critical incident energy for growth mode change was 100 eV/atom, however the critical assist energy was 121 eV/atom on the STD61 substrate. Grain size of TiN films increased with the assist ion beam energy. Finally, adhesion strength of TiN films bombarded above the critical ion assist energy showed 4~5 times higher values than that with lower bombard ion energy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.358-358
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• 2010

Ion beam bombardment at low energy forms nanosize patterns such as ripples, dots or wrinkles on the surface of polymers in ambient temperature and pressure. It has been known that the ion beam can alter the polymer surface that induces skins stiffer or the density higher by higher compressive stress or strain energies associated with chain scissions and crosslinks of the polymer. Atomic scale structure evolution in polymers is essential to understand a stress generation mechanism during the ion beam bombardment, which governs the nanoscale surface structure evolution. In this work, Molecular Dynamics (MD) simulations are employed to characterize the phenomenon occurred in bombardment between the ion beam and polymers that forms nanosize patterns. We investigate the structure evolution of Low Density Polyethylene (LDPE) at 300 K as the polymer is bombarded with Argon ions having various kinetic energies ranging from 100 eV to 1 KeV with 50 eV intervals having the fluence of $1.45\;{\times}\;1014 #/cm2$. These simulations use the Reactive Force Field (ReaxFF), which can mimic chemical covalent bonds and includes van der Waals potentials for describing the intermolecular interactions. The results show the details of the structural evolution of LDPE by the low energy Ar ion bombardment. Analyses through kinetic and potential energy, number of crosslinks and chain scissions, level of local densification and motions of atoms support that the residual strain energies on the surface is strongly associated with the number of crosslinks or scissored chains. Also, we could find an optimal Ar ion beam energy to make crosslinks well.

• 전자공학회논문지D
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• 제35D권12호
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• pp.59-67
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• 1998

본 논문에서는 몬테카를로 방식을 사용하여 이온의 에너지에 대한 타겟 원자의 스퍼터율(Sputter Yield), 이온의 주입 각도에 대한 스퍼터율, 이온의 주입에 따른 타겟 원자의 발산 분포를 3차원으로 시뮬레이션 하였다. 중(중)이온으로 (Ar/sup +/)을 사용하였고, 경(輕)이온으로 (H/sup +/)을 사용하여 10 eV에서 100 KeV 영역의 에너지에 따른 스퍼터율을 계산하였다. 또한, 스퍼터 타겟 물질로서 Cu, Al을 사용하여 계산하였고, 실험치와 일치함을 확인하였다. 스퍼터율은 입사 이온의 에너지가 증가함에 따라 증가하는 경향을 보이지만, 임계점 이후에는 점차적으로 감소하는 경향을 보였다. 중이온에 의한 스퍼터에서는 임계점이 10 KeV 영역이었고, 경이온에 의한 스퍼터에서는 1 KeV 이하 영역이었다. 또한, 이온의 주입 각도에 따라서 타겟의 스퍼터율은 점차적으로 증가하였고, 68° 부근에서 최대 스퍼터율을 기록하였다. 이온의 주입 각도에 따른 타겟 원자의 분포도에서는 각도가 커짐에 따라서 타겟 표면 법선 방향으로 방출되는 원자의 수가 많아짐을 확인하였다. 본 연구에서는, CRAY T3E 슈퍼컴퓨터에서 시뮬레이션을 수행하였으며, 구현된 몬테카를로 스퍼터 시뮬레이터의 GUI(Graphic User Interface) 환경을 구축하였다.

• Bulletin of the Korean Chemical Society
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• 제30권5호
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• pp.1026-1030
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• 2009

A novel Schiff base ligand (N, O system) 5-methoxy-2-phenyliminomethylphenol ($5-CH_3O-PMP$) was synthesized. Using the synthesized ligand as a fluorescent reagent, a fluorometric method was developed for the quantitative analysis of Al(III) ion. The quantitative analysis of Al(III) ion was performed by making the complex compound between Al(III) ion and $5-CH_3O-PMP$ in ethanol-water solution (85/15, v/v, pH 6.2). The excitation wavelength (${\lambda}em$) of the complex compound was 397 nm while the emmision wavelength (${\lambda}em$) was 498 nm. The quantitative analysis of Al(III) ion was carried out by estimating the fluorescence intensity. The various calibration curves were used for the quantitative analysis in the range of 0.27$\sim$27 ng/mL Al(III) ion concentrations. The detection limit was 0.027 ng/mL. Using the fluorometric method developed in this study, satisfying results were obtained from various samples such as tap water, hot spring water, river water, sea water and waste water, which contained considerable amounts of interfering ions.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.261-264
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• 2014

$SrTiO_3$ (STO) single crystal irradiated with a 3-MeV proton beam exhibits blue and green mixed luminescence. However, the same proton beam when used to irradiate STO with a very thin layer of deposited Pt does not show any luminescence. This Pt layer prevents any damage which may otherwise be caused by arcing, which stems from the accumulated surface voltage of tens of kV due to the charge induced by secondary electrons on the surface of the insulator during the ion beam irradiation process. Hence, the luminescence of ion-irradiated STO originates from the modification of the STO surface layer caused by arcing rather than from any direct ion beam irradiation effect. STO treated with atmospheric-pressure plasma, a simple and cost-effective method, also exhibits the same type of blue and green mixed luminescence as STO treated with an ion beam, as the plasma also creates a layer of surface damage due to arcing.

• 한국진공학회지
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• 제18권3호
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• pp.236-243
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• 2009

양성자기반공학기술개발사업단에서는 설치된 금속이온주입기를 이용하여 금속이온의 인출 시험 중에 있으며 120keV의 금속 이온주입이 가능하다. 현재 코발트 이온 주입의 타당성 확인을 위한 특성시험을 수행하고 있다. 이온원에 알루미나 도가니를 설치하여 분말 코발트 염화물을 고온($648^{\circ}C$) 가열에 의한 증기화로 인하여 플라즈마 방전이 되도록 하였다. 아크전압 120V, EHC 출력 250W에서 코발트 이온을 인출하기 위한 플라즈마를 발생하고 유지할 수 있었다. 코발트 이온 빔 전류는 플라즈마 내 아크전류에 의존하였으며 0.18A일 때 최대 빔전류 $100{\mu}A$를 얻을 수 있었다. 질량분리전자석에 의해서 $Co^+$와 $CoCl^+$, $Cl^+$ 이온의 첨두 빔 전류 비율을 확인하였고 전체 이온 대비 $Co^+$ 이온의 비율이 70% 수준을 유지함을 알 수 있었다. $Co^+$ 이온을 알루미늄 시료에 빔전류 $10{\mu}A$, 90분 동안 이온주입 하여 RBS(Rutherford Backscattering Spectrometry)분석법으로 $1.74{\times}10^{17}#/cm^2$의 이온량을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제12권3호
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• pp.276-281
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• 1991

Electrochemical behaviors of optically active sparteine-Cu(II) dihalide complexes were investigated by polarography and cyclic voltammetry (CV). These Cu(II) complexes are rather easier to be reduced to Cu(I) states when comparison is made with other nonplaner copper complexes, We have assigned the CV peaks and polarographic waves related to the redox processes for these complexes. We could also observe the exchange reaction of Cu(II) ion in the complex with mercury metal in the cell having mercury pool. The redox mechanism of these complelxes is as follows; The 1st wave appeared at +0.47 V/+0.65 V corresponds to the reaction of $SpCuX_2+ e{\rightleftarrow}SpCuX_{2^-}$ and the 2nd one at +0.26 V/+0.21 V does the reaction of $SpCuX_{2 ^-} +e{\rightleftarrow}SpCuX_2^{2-}$. The 3rd one at -0.35 V/-0.27 V is dueto the reduction of mercury complex formed via exchange reaction. Where, X is chloride ion.

• 공업화학
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• 제9권4호
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• pp.574-578
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• 1998

전기화학적 이온교환전극을 양이온 교환수지 Amberlite IRP-64와 결합제로서 Stylen-Buthylene-Rubber (SBR)를 혼합하여 압축성형 방법으로 제작하여, 전극전위와 전해질의 pH에 따른 구리이온의 흡착과 용출특성을 고찰하였다. 흡착공정에서는 -1800 mV에서 최대 흡착속도를 나타내었으며 90분 경과 후,92%의 흡착율을 나타내었다. 용출공정의 경우, 본 실험영역에서는 전위의 증가에 비례하여 용출율은 증가되어 나타났으며, 3600 mV에서 50분 이후 88%의 용출율을 나타내었다. 전기화학적 이온교환 전극 근처의 국부적인 pH 변화는 흡착과 용출공정에 크게 영향을 미치는 것으로 사료되며, 전해질의 pH가 각각 염기성과 산성에서 높은 흡착율과 용출율을 나타내었다.

• 대한전자공학회논문지
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• 제23권5호
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• pp.712-718
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• 1986

A shallow n+ layer of implanted phosphorus was used to lower the barrier height of PtSinSi schottky diodes. The reduction of barrier height of the forward turn-on voltages from 400mV to 180mV of the forward was followed by implantation of phosphorus at 35KeV with an ion dose of 8.0x10**12 atoms/cm\ulcornerand was activated at 925\ulcorner for 30min in dry O2. The test result showed that, as the ion-implanted dose increased, the forward turn-on voltage and reverse breakdown voltage were linearly decreased, but the saturation current and ideality factor(n) were linearly increased.