• Journal of Ocean Engineering and Technology
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• v.11 no.4
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• pp.49-60
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• 1997

This paper deals with the effect of coating layer on the fatigue strength of TiN coated 1Cr-1Mo-0.25V steel prepared by using the arc ion plating (AIP) process, in which it was characterized by the presence of extractor grid (ion filter). The rotary bending fatigue tests were carried out under room air conditions, and the fatigue crack initiation and growth bwhavior were observed by using plastic replica method. As experimental results, it was found that the obvious improvement of fatigue life at lower stress region was confirmed in TiN coated specimen processed with ion filter. It was also exlained that the increase of fatigue life in the case of an improved AIP process with ion filter was attributed to the retardation of crack initiation of the substrate surface due to hard coating layer, more densly formed with the reduced size and density of droplets.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.95.1-95.1
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• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\sub$p/ (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• Bulletin of the Korean Chemical Society
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• v.11 no.5
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• pp.399-402
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• 1990

Activation parameters of the exchange between two types of glycinate groups in (nitrilotriacetato)dioxovanadate(V) ion, $[VO_2(NTA)]^{2-}$, have been determined as the results of $^{13}C$ NMR measurements over a range of temperatures between 277 and 306$^{\circ}K$. The exchange mechanism is proposed on the basis of the chelate ring opening-closing process, assuming rupture of the metal-oxygen (glycinate) bond trans to V = O bond to give a five-coordinated intermediate.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.585-588
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• 1998

We investigated the ultra-low energy B, P, and As ion implantation using ungraded MDRANGE code to form nanometer junction depths. Even at the ultra-low energies that were simulated in paper, it was found that channeling cases must be carefully considered. In the cases of B, channeling occurred above 500 eV, in the cases of P, channeling occurred above 1 keV, and in the cases of As, channeling occurred above 2 keV. Comparing 2D dopant profiles of 1 keV B, 2 keV P, and 5 keV As with tilts, we demonstrated that most channeling cases occurred not lateral directions but depth directions. Through thus results, even below 5 keV energy ion implant considered here, it is estimated that channeling effects are important in the formation of nanometer junction depths.

• Journal of the Korean Magnetic Resonance Society
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• v.5 no.2
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• pp.73-90
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• 2001

Vanadium-doped H-SAPO-34 samples were prepared by a high-temperature solid-state reaction between SAPO-34 and the paramagnetic V(Ⅳ) species and characterized carefully by EPR and Electron Spin-Echo Modulation(ESEM) studies. The paramagnetic vanadium species generated in both V$_2$O$\_$5/ and VOSO$\_$4/ of SAPO-34 have the same narrow range of g value fur vanadium species assigned to VO$\^$2+/ inferred from the isotropic EPR spectrum at 293 K. The EPR and ESEM data indicate that the V(Ⅳ) species exist as a vanadyl ion either as [V(Ⅳ)]O$\^$2+/ or V$\^$4+/. The [V(Ⅳ)]O$\^$2+/ species seems to be more probable because SAPO-34 having a low negative framework charged and more positively charged species like V$\^$4+/can not be easily stabilized. Tetravalent vanadium ion in vadium-doped H- SAPO-34 can only be observed at the temperature lower than 77 K, while the vanadyl ion, VO$\^$2+/in the activated sample of VH-SAPO-34 can produce the ion even at room temperature. After the adsorption of methanol, ethanol, propanol or ethene to the VH-SAPO-34, only one molecule coordinate to [V(Ⅳ)]O$\^$2+/ was observed in EPR and ESEM spectra.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.802-807
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• 1995

The electrochromic properties of vacuum deposited V$_2$O$_{5}$ thin films as a function of crystallinity and film thickness have been systematically investigated. The as-deposited films have slightly yellow appearance. V$_2$O$_{5}$ films deposited at higher substrate temperature(>14$0^{\circ}C$) are found to be crystalline while those deposited at low substrate temperature are amorphous. The optical modulation on lithium ion injection indicates that V$_2$O$_{5}$ films exhibit anodic coloration in the 300~500 nm wavelength range and cathodic coloration in the 500~1100nm wavelength range independent of crystallinity and film thickness. The optical band gap energy of crystalline and amorphous Li$_{x}$ VV$_2$O$_{5}$ films shifts to higher energies by 0.17 eV and 0.75 eV, respectively, with increasing lithium ion injection up to x=0.6. The coloration efficiency of amorphous Li$_{x}$ V$_2$O$_{5}$ exhibits very little dependence on film thickness and lithium ion injection amounts in the near-infrared while it increases significantly with increasing film thickness and decreasing lithium ion injection amounts in the blue and near-UV due to the shift in absorption edge below around 500nm. However, the coloration efficiency of crystalline Li$_{x}$ V$_2$O$_{5}$is relatively independent of film thickness and lithium ion injection in the 300~1100 nm wavelength range.

• Journal of Surface Science and Engineering
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• v.39 no.3
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• pp.105-109
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• 2006

The effects of negative carbon ion beam energy on the bonding configuration, hardness and surface roughness of DLC film prepared by a direct metal ion beam deposition system were investigated. As the negative carbon ion beam energy increased from 25 to 150 eV, the $sp^3$ fraction of DLC films was increased from 32 to 67%, while the surface roughness was decreased. The films prepared at 150 eV showed the more flat surface morphology of the film than that of the film prepared under another ion beam energy conditions. Surface roughness of DLC film varied from 0.62 to 0.22 nm with depositing carbon ion beam energy. Surface nano-hardness increased from 12 to 57 Gpa when increasing the negative carbon ion beam energy from 25 to 150 eV, and then decreased when increasing the ion beam energy from 150 to 200 eV.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.4
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• pp.259-264
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• 2000

In this study, we quantitatively measure the ion ranges of arsenic with energies ranging from 10 KeV to 100 KeV, implanted at $3^{\circ}$, $9^{\circ}$ $15^{\circ}$ the (100) plane, and the damage created during ion implantation. To obtain detailed information of ion range and damage distributions in low energy region where elastic collisions dominate the slowing down process, molecular dynamics computer simulation was performed and compared to the existing results. The effects of implant energy and degree on damage generation are present. The number of vacancy were calculated from the deposited energy using Kinchin-Pease equation. In the energy range 10 keV-100 keV, simulations show that the number of Frenckel pairs produced by As-ion bimbardment is 9 and incident angle dependence of the vacancy was the same but defects were distributed at different depth.