• Title/Summary/Keyword: As(V)

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Applications and Impact of V2G Technology for Electric Vehicle and Charging Infrastructure (전기자동차와 충전기반시설의 V2G 기술 활용과 영향에 관한 연구)

  • Lee, Sunguk;Park, Byungjoo
    • The Journal of the Convergence on Culture Technology
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    • v.5 no.2
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    • pp.367-373
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    • 2019
  • As the number of Battery Electric Vehicle (BEV) is increasing dramatically Vehicle-to-Grid (V2G) te chnology also has been spotlight from industry and academia recently. With help of V2G technology Battery of EV can play many important roles like as energy storage system (ESS) and electric energy resource in Smart Grid environment. This paper provides comprehensive review of Vehicle-to-Home(V2H), Vehicle-to-Building(V2B) and Vehicle-to-Grid(V2G) technologies. The economical analysis of these technologies is also discussed.

Desing and fabrication of GaAs prescalar IC for frequency synthesizers (주파수 합성기용 GaAs prescalar IC 설계 및 제작)

  • 윤경식;이운진
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.4
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    • pp.1059-1067
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    • 1996
  • A 128/129 dual-modulus prescalar IC is designed for application to frequency synthesizers in high frequency communication systems. The FET logic used in this design is SCFL(Source Coupled FET Logic), employing depletion-mode 1.mu.m gate length GaAs MESFETs with the threshold voltage of -1.5V. This circuit consists of 8 flip-flops, 3 OR gates, 2 NOR gates, a modulus control buffer and I/O buffers, which are integrated with about 440 GaAs MESFETs on dimensions of 1.8mm. For $V_{DD}$ and $V_{SS}$ power supply voltages 5V and -3.3V Commonly used in TTL and ECL circuits are determined, respectively. The simulation results taking into account the threshold voltage variation of .+-.0.2V and the power supply variation of .+-.1V demonstrate that the designed prescalar can operate up to 2GHz. This prescalar is fabricated using the ETRI MMIC foundary process and the measured maximum operating frquency is 621MHz.

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A Design of Level Converter with the Increased Acceptable Threshold Voltage Variations of GaAs E/D MESFETs (GaAs E/D MESFET의 염계전압 변동에 강한 레벨 변환회로의 설계)

  • 이창석;윤광준;박형무;마동성
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.11
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    • pp.1679-1685
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    • 1989
  • In this paper, a new design of GaAs level converter is proposed, and anlyzed wth the variation of the threshold voltage of E/D MESFETs. The threshold voltage ranges analyzed are -0.05V to 0.35V for enhancement type MESFETs and -0.3V to -0.7V for depletion type MESFETs. In this range, the variation of the input characteristics of the conventional level converter designed to convert the level of DCFL using Vss of -0.8V to that of -0.2V, is greather than 600mV, but of the level converter proposed here is less than 100mV.

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Characterization of $V_2O_{5}$ as a Counter Electrode for Smart Windows (스마트 윈도우용 $V_2O_{5}$ 대향전극의 특성)

  • 김진;하승호;조봉희;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.28-31
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    • 1994
  • We have investigated the characterization of $V_2O_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The amorphous $V_2O_{5}$ thin films produces comparatively small changes in transmittance in the visible and near infrared compared to the crystalline $V_2O_{5}$ thin films, while the degradation occurs in a-$V_2O_{5}$ thin films with increasing the cycle life time. As the thickness of $V_2O_{5}$ thin films increases from 100 to 600 nm, the magnitude of transmittance modulation decreases. The crystalline $V_2O_{5}$ thin films with thickness around 1000 have electrochromic properties suitable for counter electrode application in lithium based electrochromic smart windows.

The Effect of Pile Length on the Handle and Physical Properties of Velvet (Velvet의 pile 길이가 촉감 및 물리적 특성에 미치는 영향)

  • 장정애;류덕환
    • Journal of the Korean Society of Clothing and Textiles
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    • v.19 no.3
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    • pp.471-482
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    • 1995
  • Using the acetate velvet and viscose velvet whose pile lengths were sheared as 1.45, 1.55, 1 65, 1.75, 1.85, 1.90mm under the condition equating the weaving process of ground fabric, the conclusions were as follows through the results of the sensory assessments estimated by women students in our university and the physical properties, H. V and T. H. V obtained by KES-F system. 1. In the sensory assessments estimated by the method of paired comparison and ranking of samples, the longer pile length was, the more the hand values of smoothness, softness, thickness, heaviness increased on the whole. 2. The H V. and T. H. V. measured by KES-F system were as follows; Kohi increased to pile length 1.85mm and then decreased a little at 1.90mm. hummer increased as pile length was longer. Fukurami increased to pile length 1.75mm and then decreased gradually as pile length was longer. Total hand value increased gradually from 1. 45mm to 1.85mm, had the top value at 1.85mm, and then decreased a little at 1.90mm. 3. In the results of summarizing $\ulcorner$the physical properties correlated closely with the H. V obtained by sensory assessments$\lrcorner$ and tithe Physical properties correlated closely with the H. V. and T. H. V obtained by KES-F systems, it showed that all the sensory properties correlated closely with compressive energy, flexural rigidity, thickness, weight and pile ratio in the former and that the physical properties correlated closely with each H V and T. H. V were different in the latter. 4. It showed that factor 1 was related to compressive energy, thickness, weight, pile ratio, factor 2 was related to recovery energy, compressive resilience, compressive index, and factor 3 was related to compressive recovery ratio in the result of factor analysis. 5. In the multiple repression analysis, the expressions of all sensory properties had compressive ratio, frictional coefficient in the regression expressions of $\ulcorner$H. V. obtained by sensory assessments$\lrcorner$, while the expressions of each H. V. and different physical properties in the regression expressions of $\ulcorner$H. V. obtained by KES-F system$\lrcorner$.

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Genome sequence of Veillonella atypica KHUD-V1 isolated from a human subgingival dental plaque of periodontitis lesion (사람 치주염 병소의 치은 연하 치태에서 분리된 Veillonella atypica KHUD-V1의 유전체 염기서열 해독)

  • Lee, Jae-Hyung;Shin, Seung-Yun;Lee, Han;Yang, Seok Bin;Jang, Eun-Young;Ryu, Jae-In;Lee, Jin-Yong;Moon, Ji-Hoi
    • Korean Journal of Microbiology
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    • v.55 no.1
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    • pp.77-79
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    • 2019
  • Here we report the genome sequence of Veillonella atypica strain KHUD-V1 isolated from subgingival dental plaque of Korean chronic periodontitis patients. Unlike other V. atypica strains, KHUD-V1 carries two prophage regions and prophage remnants, as well as several genes homologous to prophage-associated virulence factors, such as virulence-associated protein E, a Clp protease, and a toxin-antitoxin system. The isolate and its genome sequence obtained here will aid to understand the diversity of the genome architecture of Veillonella within an evolutionary framework and the role of prophages that contribute to the genetic diversity as well as the virulence of V. atypica.

The analysis result of temporary operation of 765 kV transmission line as 345 kV rating (765 kV 송전선로의 345 kV 운전에 따른 계통 해석)

  • Woo, J.W.;Shim, E.B.;Kang, Y.W.
    • Proceedings of the KIEE Conference
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    • 1998.07e
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    • pp.1647-1649
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    • 1998
  • This paper describes the power frequency voltage and its countermeasure when a 765 kV transmission line is directly connected to a 345 kV line and operated at 345 kV voltage. The summary of this result is as follows : The western route of 765 kV transmission line doesn't need any countermeasure to reduce the power frequency voltage at the receiving end. The eastern route of 765 kV transmission needs 100 Mvar(3 phase) capacity of shunt reactor at the receiving end to reduce the power frequency voltage. The use of shunt reactors in the 765 kV transmission lines has unexpected problems, one of which is induction of high voltages on a de-energized circuit of two parallel lines. This paper examined the problem of resonance on two parallel transmission circuits in one routes.

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Studies on the Isolation of Vibrio Species from Sea Water and Marine Products at Ulleung Island of Korea in 1985 (한국 울릉도 근해의 비브리오속의 분리연구)

  • Ju, Jin-Woo;Lee, Mee-Heon;Kim, Il
    • The Journal of the Korean Society for Microbiology
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    • v.21 no.3
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    • pp.345-353
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    • 1986
  • Authors studies on the isolation of non-sucrose fermentation Vibrio species such as V. parahaemolyticus, V. vulnificus and V. damsela from sea water, shellfishes and various algae at Ulleung island in the east of Korea on summer in 1985. Authors carried out test for isolated strains to biochemical characteristics, halophilism, hemolysis and serological reaction. The results obtained were as follows: 1. Strains isolated from total specimens were 25 strains of V. parahaemolyticus, 2 strains of V. vulnificus and 1 strain of V. damsela, respectively. 2. Isolated frequency of Vibrio species from sea water and marine products was lower than on specimens in the southern sea of Korea from 1980 to 1985. 3. On hemolysis reaction on blood agar media using human and rabbit erythrocytes, 14 strains among 25 strains of V. parahaemolyticus isolated were positive, and V. vulnificus and V. damsela were positive, respectively. 4. The distributions of serotypes of V. parahaemolyticus isolated were from O1 group to O10 group, and from K 10 to K 69. The results of K serotypes were as follows ; serotype K 10 and K 33 were 2 strains, serotype K 59 and K 69 were 1 strain, respectively. And 2 strains of V. vulnificus isolated were not agglutinated by antiserum of V. vulnificus. Therefore, the probability is that 2 strains of V. vulnificus isolated were other serotypes distributed on sea weater and marine products of Ulleung island of Korea.

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Utilization of Domestic Vegetables Juices as a Medium for Growth and Reproduction of Phytophthora species (국내산 야채쥬스의 역병균 영양생장 및 생식생장용 배양기 이용)

  • 지형진;조원대;최용철
    • Korean Journal Plant Pathology
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    • v.14 no.4
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    • pp.299-302
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    • 1998
  • V8 juice agar (V8A) has been the most popular and commonly used medium for growth and reproduction of Phytophthora. However, frequently V8 vegetable juice is not available or difficult to obtain in Korea. We therefore developed widely accessible medium to substitute for V8A using domestically available five juices; two carrot (KCJA), two tomato (KTJA) and a vegetable-mix (KVMA). To prepare 10% juice medium, each vegetable juice 100 ml, DW 900 ml, agar 17 g and Ca CO3 0.5∼1.0g were supplemented to adjust pH ca. 6.0 Mycelial growth of P. cactorum and P. capsici on KTJA and KVMA was equally effective as V8A for the growth of P. cactorum, P. capsici, P. drechsleri and P. nicotianae under light. Sporangial production of P cactorum, P. capsici and P. nicotianae on KTJA and KVMA was as good as V8A and slightly better than CKJA, but the difference was insignificant by P. cactorum and P. nicotianae. The four fungi successfully formed oospores on all the media although the numbers were varied among species and media. While KTJA was the best for P. cactorum and P. capsici, V8A was the best for P. capsici and P. drechsleri. However, KCJA stimulated highest number of oopspores of P. nicotianae. Overall results showed that domestically available vegetable juices were highly effective on growth and reproduction of Phytophthora and comparable to V8 juice. Therefore, the domestic juice medium can be successfully replaced V8A in Phytophthora study.

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Threshold Voltage control of Pentacene Thin-Film Transistor with Dual-Gate Structure

  • Koo, Jae-Bon;Ku, Chan-Hoe;Lim, Sang-Chul;Lee, Jung-Hun;Kim, Seong-Hyun;Lim, Jung-Wook;Yun, Sun-Jin;Yang, Yong-Suk;Suh, Kyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1103-1106
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    • 2006
  • We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

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