• Title/Summary/Keyword: As(V)

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Electrochemical Behaviors of Binary Ti-Zr Alloys

  • Oh, M.Y.;Kim, W.G.;Choe, H.C.;Ko, Y.M.
    • Corrosion Science and Technology
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    • v.8 no.2
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    • pp.89-92
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    • 2009
  • Pure Ti as well as Ti-6Al-4V alloy exhibit excellent properties for dental implant applications. However, for a better biocompatibility it seems important to avoid in the composition the presence of V due to the toxic effects of V ion release. Thus Al and V free and composed of non-toxic element such as Nb, Zr alloys as biomaterials have been developed. Especially, Zr contains to same family in periodic table as Ti. The addition of Zr to Ti alloy has an excellent mechanical properties, good corrosion resistance, and biocompatibility. In this study, the electrochemical characteristics of Ti-Zr alloys for biomaterials have been investigated using by electrochemical methods. Methods: Ti-Zr(10, 20, 30 and 40 wt%) alloys were prepared by arc melting and homogenized for 24 hr at $1000^{\circ}C$ in argon atmosphere. Phase constitutions and microstructure of the specimens were characterized by XRD, OM and SEM. The corrosion properties of the specimens were examined through potentiodynamic test (potential range of -1500 ~ 2000 mV), potentiostatic test (const. potential of 300 mV) in artificial saliva solution by potentiostat (EG&G Co, PARSTAT 2273. USA).

A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand-Held Phone

  • Lee, Jong-Lam;Kim, Hae-Cheon;Mun, Jae-Kyung;Kwon, Oh-Seung;Lee, Jae-Jin;Hwang, In-Duk;Park, Hyung-Moo
    • ETRI Journal
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    • v.16 no.4
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    • pp.1-11
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    • 1995
  • A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

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The NAND Type Flash EEPROM Using the Scaled SONOSFET (Scaled SONOSFET를 이용한 NAND형 Flash EEPROM)

  • 김주연;권준오;김병철;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.145-150
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    • 1998
  • 8$\times$8 bit scaled SONOSFET NAND type flash EEPROM that shows better characteristics on cell density and endurance than NOR type have been designed and its electrical characteristics are verified with computer aided simulation. For the simulation, the spice model parameter was extracted from the sealed down SONOSFET that was fabricated by $1.5mutextrm{m}$ topological design rule. To improve the endurance of the device, the EEPROM design to have modified Fowler-Nordheim tunneling through the whole channel area in Write/Erase operation. As a result, it operates Write/Erase operation at low current, and has been proven Its good endurance. The NAND type flash EEPROM, which has upper limit of V$_{th}$, has the upper limit of V$_{th}$ as 4.5V. It is better than that of floating gate as 4V. And a EEPROM using the SONOSFET without scaling (65$\AA$-l65$\AA$-35$\AA$), was also designed and its characteristics have been compared. It has more possibliity of error from the V$_{th}$ upper limit as 4V, and takes more time for Read operation due to low current. As a consequence, it is proven that scaled down SONOSFET is more pertinent than existing floating gate or SONOSFET without scaling for the NAND type flash EEPROM.EPROM.

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Growth and characterization of semi-insulating GaAs co-doped with Cr and In by vertical gradient freeze technique (수직온도구배냉각법으로 크롬과 인듐이 함께 도핑된 반절연 갈륨비소 단결정의 성장 및 특성평가)

  • Young Ju Park;Suk-Ki Min;Kee Dae Shim;Mann J. Park
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.1
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    • pp.83-91
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    • 1994
  • We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.

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Evaluation of Industrial Byproduct for the Adsorption of Arsenic (V) (재이용한 산업부산물에 의한 비소(V) 이온 흡착능 평가)

  • Park, Youn-Jong;Yang, Jae-Kyu;Choi, Sang-Il
    • Journal of Soil and Groundwater Environment
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    • v.12 no.4
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    • pp.78-85
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    • 2007
  • This study provides an attempt to evaluate sanding wastes, generated from a chemical company as a reused adsorbent. Organic impurities in the raw sanding wastes were removed by calcination at $550^{\circ}C$. Aluminum was a major inorganic composition in the raw sanding wastes and increased from 29.09% to 52.73% after calcination. Dissolved concentrations of heavy metals from the calcined sample were below 0.3 mg/L in a stability test at pH 2. From the pH-edge adsorption experiments with the calcined sanding wastes, As (V) was found to follow an anionic-type adsorption. Adsorption isotherm obtained with variation of the dosage of the calcined sanding wastes was better described by Freundlich equation than Langmuir one. Freundlich constants of K and 1/n were 4.244 and 0.316, respectively. The As (V) adsorption capacity of calcined sanding wastes estimated from Langmuir isotherm was 13.25 mg/g. From this study, the calcined sample was identified as a good reusable adsorbent in the view point of stability and adsorption capacity on As (V).

Studies on Separation and Determination of Korean Bovine Serum Protein by Colorimetric Method (비색법에 의한 한우 혈청단백질의 분획정량 시험)

  • Cho, J.H.
    • Korean Journal of Veterinary Research
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    • v.11 no.2
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    • pp.145-148
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    • 1971
  • Serum Samples from adult of Korean cattles including 40 females and 20 males were analyzed by sodium salt precipitation and colorimetric method in the purpose of the determination of total serum protein, albumin, globulin, ${\alpha}$-globulin, ${\beta}$-globulin and ${\gamma}$-globulin. The results obtained arc summarized as follows: 1. Mean value of total serum protein showed a slight variation from 7.6%, and its regional and sex differences were not found to be significant. 2. Contents of albumin in serum showed lower level than that of globulin as low level of A/G ratio 0.4 in proportion. 3. Contents of Serum ${\alpha}$-globulin showed 1.4w/v% and $1.51{\pm}0.46$w/v% in each group of female, and $1.31{\pm}0.26$w/v%, in the group of male. 4. Contents of serum ${\beta}$-globulin showed 1.74w/v%, 1.95w/v%, in each group of female, and 1.82w/v% in the group of male. 5. Contents of serum ${\gamma}$-globulin showed 2.32w/v%, 2.30w/v% in each group of female, and 2.30w/v%, in the group of male.

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A Study to Establish the Core Process of ITIL v3 Using ANP (ANP 모형을 이용한 ITIL v3 핵심 프로세스 도출 연구)

  • Huh, Sang Moo;Kim, Woo Je
    • Journal of Information Technology Services
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    • v.16 no.3
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    • pp.83-101
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    • 2017
  • IT services are provided by many public institutions and companies in order to satisfy various needs of customers. As the modern IT systems become larger and more complex, it becomes more difficult for IT organizations to provide IT services. So, the IT organizations have applied or are planning to apply ITIL (Information Technology Infrastructure Library) in order to provide IT services systematically. The ITIL v3 was revised on July 2011 and have 5 categories, 37 processes, and 113 sub-processes. Therefore, it is known that it is very difficult to satisfy all processes of ITIL v3. If we can concentrate on the core processes of ITIL v3, we will be able to provide IT services more efficiently. The processes of ITIL v3 are defined as some processes influences other processes. Therefore, the core processes can be established using related techniques. We searched for previous research and related information, but we could not find any related research. In this study, we had applied the ANP (Analytic Network Process) techniques to find the core processes of ITIL v3. We expect that IT services will be provided more efficiently because we can be concentrate on the core processes of ITIL v3, which are the results of this study.

Analysis on the Characteristics of Single-walled Carbon Nanotube Transistor Printed by Roll-to-Roll and Roll-to-Device Method

  • Yun, Yu-Sang;Majima, Yutaka;Park, Wan-Jun;Azuma, Yasuo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.262-263
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    • 2011
  • Flexible electronics, a future technology of electronics, require a low cost integrated circuit that can be built on various types of the flexible substrates. As a potential candidate for this application, a single walled carbon nanotube network is studied as an active device with a scheme of thin film transistor. Transistors are formed on a plastic foil by the Roll-to-Roll (R2R) and the Roll-to-Device (R2D) printing method. For both printing methods, electrical transports for the transistors are presented with the temperature dependence of threshold voltage (V_Th) and mobility from the measured transfer curves at temperatures ranging from 10 K to 300 K. It is observed that ${\mu}=0.044cm^2/V{\cdot}sec$ and V_Th=7.28V for R2R and ${\mu}=0.025cm^2/V{\cdot}sec$ and V_Th=3.10V for R2D, both for the temperature at 300K. Temperature dependence of mobility and V_Th is observed. However for R2R, the temperature dependence of V_Th is constant. It is the difference between, R2R and R2D.

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For/from Alternations in Causative 'FOR/FROM V-ing' Constructions ('For/From V-ing' 사역구문의 전치사 for/from 교체현상 연구)

  • Kim, Mija
    • Cross-Cultural Studies
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    • v.49
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    • pp.1-32
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    • 2017
  • This paper discusses the structural and meaning features of causative from/for V-ing constructions as complement and provides insight on their grammatical characteristics revealed from alternation between prepositions for and from in nonfinite V-ing complement clause constructions. Guided by empirical data, this paper demonstrates that there are three types of syntactic patterns classified by the main verbs in these constructions and that these three syntactic types are closely linked with the meaning. These classifications are supported by the passivizations and aspect. In addition, this paper suggests that the function of for and from followed by nonfinite V-ing clause should be treated as a preposition introducing nonfinite V-ing clauses.

Effects of $v_2O_5$ Addition on the Magnetic Properties of Mn-Zn Ferrites (Mn-Zn Ferrites 의 자기적 성질에 미치는 $V_2O_5$의 첨가효과)

  • Jo, Deok-Ho
    • Journal of the Korean Magnetics Society
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    • v.2 no.3
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    • pp.222-227
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    • 1992
  • The effects of $V_2O_5$ addition as an additive on the densification, the microstructure and the magnetic properties of Mn-Zn ferrites were studied. The maximum density was observed at 0.1 wt% $V_2O_5$ content and it was recognized that a small content of $V_2O_5$ prohibited the discontinuous grain growth. The initial permeability showed maximum at 0.1 wt% $V_2O_5$ content and the power loss minimum at 0.03 wt% $V_2O_5$ content. It was found that a small content of $V_2O_5$ went into solid solution in the Mn-Zn ferrites, but above that extent $V_2O_5$ formed a second phase to be segregated at the grain boundaries.

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