• 산업보건소식
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• no.46
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• pp.21-21
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• 1987

앞으로 본지를 통하여 현재 쓰이고 있는 유해물의 허용한계가 어떠한 근거로 정하여졌는가를 소개하고자 한다. 허용한계에 대하여 여러가지로 소개된 바 있으나 그 근거를 알지 못하여 그 적용에 있어서 잘못이 생길 수 있다. 소개되는 내용은 미국의 ACGIH의 TLV가 결정 됨에 있어서 이용된 여러가지 문헌을 소개하고 그 내용을 간추려 보고자한다. 1966년에는 367가지의 물질에 대한 TLV가 알려져 있었고 1971 년에는 500 가지의 물질에 대하여 결정된 바 있으나 본지에서는 우리나라에서 찾아볼 수 있는 물질과 기타 중요하다고 생각되는 물질을 선택하여 소개하고자 한다.

• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.275-282
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• 1995

III족 원료 가스로 triethylgallium(TEGa)과 trimethylindium(TMIn)을 사용하고 V족 원료 가스로 사전 열 분해하지 않은 arsine(AsH3)과 monoethylarsine(MEAs)을 사용하여 ultrahigh vacuum chemical vapor deposition(UHVCVD)법으로 Si3N4로 패턴된 GaAs(100)기판 위에 GaAs와 InGaAsqkr막을 선택적으로 에피택시 성장을 하였다. V족 원료 가스를 사전 열 분해하지 않으므로 넓은 성장 온도 구간과 V/lll 비율에서도 선택적으로 박막이 성장되었다. 또한 선택 에피택시의 성장 메카니즘을 규명하기 위하여 다양한 filling factor(전체면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 입사된 분자 상태의 원료 기체가 탈착된 후 표면 이동이나 가스 상태의 확산과정 없이 마스크로부터 제거되므로 패턴의 크기와 모양에 따른 성장 속도의 변화나 조성의 변화가 없을 뿐만 아니라 chemical beam epitaxy(CBE)/metalorganic molecular beam epitaxy(MOMBE)법에서 알려진 한계 성장온도 이하에서 선택 에피택시 성장이 이루어졌다.

• YAKHAK HOEJI
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• v.15 no.1
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• pp.16-23
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• 1971

Seven organic arsine compounds are synthesized as potential anti-tumor agents are subjected to the screening test of activity against SN-36 Leukemia, Sarcoma 180 and Ehrlich ascites carcinoma. Three compounds, namely N-(5-Nitrofroyl)-p-arsanilic acid, N-(2, 4-Dihydroxybenzoethyl)-p-arsanilic acid and N-$\alpha$(p-arsanilido) acetyl thiourea of the all synthesized compounds showed comparatively potential activities against experimental ascitic tumors both through cytological findings and survival duration.

• Bulletin of the Korean Chemical Society
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• v.16 no.2
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• pp.149-153
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• 1995

We have grown GaAs epilayers by chemical beam epitaxy(CBE) using unprecracked hydrides and metal organic compounds via a surface decomposition process. This result shows that unprecracked arsine (AsH3) or monoethylarsine (MEAs) can be used in chemical beam epitaxy(CBE) as a replacement of a precracked AsH3 source in CBE. It was also found that the uptake of carbon impurity in epilayers grown using trimethylgallium(TMG) with unprecracked AsH3 or MEAs was significantly reduced compared to that in epilayers grown by CBE process employing TMG and arsenics produced from precracked hydrides. We propose a surface structural model suggesting that the hydrogen atoms play an important role in the reduction of carbon content in GaAs epilayer. Intermediates like dihydrides from hydride sources were also considered to hinder carbon atoms from being incorporated into the epilayers or to remove other carbon containing species on the surface.

• Journal of the Korean Institute of Gas
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• v.20 no.6
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• pp.1-8
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• 2016

Gu-mi hydrogen fluoride leak accident in 2012 was amplified social anxiety for chemical accidents. To relieve these anxieties Off-site Risk Assessment was introduced in 2015. Off-site Risk Assessment is targeted at most chemicals, and most of the high-pressure-toxic gases which are mainly used in high-tech industries such as semi conductor, display, Photovoltaic panels industry are included in the substance of the Off-site Risk Assessment. Since Korean companies occupy a high market share in high-tech industries, high pressure-toxic domestic gas consumption is constantly increasing. Accordingly, it is expected to increase the possibility of accidents. In accordance with the circumstances, this study was to conducted Consequence Analysis(CA) about high pressure-toxic gases those are high demand in domestic. CA was used for ALOHA developed by US EPA & US NOAA and the CA result of Arsine was the largest at 4,700 m. CA results are expected to be utilized for determining the effective Safety distances when high pressure-toxic gas leak.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.328.2-328.2
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• 2014

Semiconductor nanowires (NWs) have attracted research interests due to the distinct physical properties that can lead to variousoptical and electrical applications. In this paper, we have grown InAs NWs viagold (Au)-assisted vapor-liquid-solid (VLS) and catalyst-free vapor-solid (VS) mechanisms and investigated on the p-type doping profile of the NWs. Metal-organic chemical vapor deposition (MOCVD) is used for the growth of the NWs. Trimethylindium (TMIn) and arsine (AsH3) were used for the precursor and diethyl zinc (DEZn) was used for the p-type doping source of the NWs. The effectiveness of p-type doping was confirmed by electrical measurement, showing an increase of the electron density with the DEZn flow. The structural properties of the InAs NWs were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In addition, we characterize atomic distribution of InAs NWs using energy-dispersive X-ray spectroscopy (EDX) analysis.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.22 no.1
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• pp.52-59
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• 2012

Objectives: The purpose of this study was to evaluate the exposure possibility of by-products during the semiconductor manufacturing processes. Methods: The authors investigated types of chemicals generated during semiconductor manufacturing processes by the qualitative experiment on generation of by-products at the laboratory and a literature survey. Results: By-products due to decomposition of photoresist by UV-light during the photo-lithography process, ionization of arsine during the ion implant process, and inter-reactions of chemicals used at diffusion and deposition processes can be generated in wafer fabrication line. Volatile organic compounds (VOCs) such as benzene and formaldehyde can be generated during the mold process due to decomposition of epoxy molding compound and mold cleaner in semiconductor chip assembly line. Conclusions: Various types of by-products can be generated during the semiconductor manufacturing processes. Therefore, by-products carcinogen such as benzene, formaldehyde, and arsenic as well as chemical substances used during the semiconductor manufacturing processes should be controlled carefully.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.247-253
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• 2003

In this study, a numerical analysis of the deposition of gallium arsenide from TMGa and arsine in a horizontal MOCVD reactor is performed to investigate the effect of inlet diffuser shape of reactor on the flow and deposition characteristics. The effects of two geometric parameters (diffuser angle, diffuser shape) on the growth rate, growth rate uniformity, flow uniformity and pressure loss are presented. As a results, it is found that the optimum linear diffuser angle is in the range of $50^{\circ}$∼$55^{\circ}$ and parabolic diffuser in the range of $40^{\circ}$∼$45^{\circ}$ from the viewpoint of growth rate uniformity, flow uniformity and average growth rate. It is also found that variation of diffuser angle has greater impact on growth rate uniformity than average growth rate particularly in parabolic diffuser.

• Journal of the Korean Chemical Society
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• v.35 no.4
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• pp.389-396
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• 1991

The pre-concentration and determination of ultratrace arsenic in water samples was studied by the precipitate flotation technique. The arsenic in 1.0l of water sample, in which all suspended materials were filtered out, was coprecipitated together with La(OH)$_3$ precipitates at pH 8.5${\pm}$0.1. After the precipitate was made to be hydrophobic by adding mixed surfactant of 1 : 8 mole ratio of sodium oleate and sodium dodecyl sulfate, it was floated with the aid of tiny bubbles of nitrogen gas in a flotation cell. The floated precipitate was quantitatively collected on a micropore glass filter by the suction, dissolved with small volume of 1.0M sulfuric acid, and accurately diluted to 25.00ml with a de-ionized water. Total arsenic was spectrophotometrically determinated by forming silver diethyldithiocarbamate complex of arsine generated from arsenic in the concentrated solution. The calibration curve was linear up to 20ng/ml in the original solution. Analytical results showed that contents of arsenic in a campus wastewater and a river water were 8.2ng/ml and l.0ng/ml, respectively, and their recoveries were 93${\%}$ and 90${\%}$ in water samples which a given amount of arsenic was added into. From above result, it could be concluded that this method was applicable to the determination of arsenic in various kinds of water at low ng/ml levels.