• 전기의세계
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• v.23 no.4
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• pp.46-52
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• 1974

Generally, it has been regarded that there are two kinds of the effect of the electrodes, especially of the cathode in the gas discharge, (a) the effect caused by the difference of the cathode meterial and (b) the effect by the change of the cathode surface state even in the same meterials. Thus the two effects must be investigated independently to study the roles of the cathode in gas discharges. This paper measured sparking voltage in Rare gas (Ar, He) for the change of sparking voltage in repeating sparks and for the effect of (a) and (b) mentioned above, under the condition that the desorption of impurities from the cathod can be nigligible, and it is obtained that the correlative relations of the work function, sparking voltage and secondary coefficient are comparatively simple. In addition, the interesting character of the minimum point of the paschen's curves is found. The results were as follows; 1) The value of (pd)min with minimum pint of sparking voltage, (Vs)min, is 0.7-0.9 Torr. cm in Argon, but is 5.6-7.1 Torr. cm in Helium, and Paschen's curve in Helium shows slow curve than in Argon. 2) The minimum point of the Paschen's curve is satisfied actually Townsend's self sustaining criterion in Argon, but non-satisfaction in Helium, and the Townsend's secondary coefficient .gamma. action have compound property (.gamma.$_{i}$, .gamma.$_{p}$, .gamma.$_{m}$) in Helium. 3) The dependenting character of work function in Helium is less than in Argon. 4) The minimum point of sparking voltage increase under oxidized electrode than clear electrode in Au and Ag, but minimum point decrease in Ni and Cu.

• Journal of Welding and Joining
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• v.15 no.6
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• pp.57-65
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• 1997

A study was undertaken to determine the influence of welding variables such as shielding and plasma gases, torch standoff, travel speed and heat input, etc. on the quality of plasma arc welds in Zircaloy-4 sheet, 2mm thick. Effect of shielding gases and their flow rates on the mechanical properties of Zircaloy-4 welds by plasma arc welding were determined in terms of tensile, bardness and bend tests. The microstructure and fracture surface of Zircaloy-4 welds were investigated by optical and scanning electron microscopies. In addition, the causes of porosity and undercut in plasma arc welds of Zircaloy-4 were also investigated. Zircaloy-4 weld bead width and depth by helium shielding gas showed a wider and deeper than those by argon. It was found that Zircaloy-4 welds with shielding gas of helium did dxhibit a little smoother and uniform weld beads than those with shielding gas of argon. It was also found that the optimum gas flow rates for Zircaloy-4 welding were 0.45l/min for plasma gas with Ar and 4.5 - 6 l/min for shielding gas with He. In addition, there was no big difference in the microstructure and fracture surface of the weld metals made by either Ar shielding gas or He shielding gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.152-155
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• 2003

Ashing of photoresist was investigated in dielectric barrier discharges in atmospheric pressure by changing applied voltage, frequency, flow rate. we analyzed the plasma by Optical Emission Spectroscopy(OES) to monitor the variation of active oxygen species. Another new peaks of oxygen radical is observed by addition of argon gas. This may explain the increase in ashing rate with argon addition. With the results of Optical Emission Spectroscopy(OES), we can find the optimized ashing conditions. MIS capacitor for monitoring charging damage by the plasma was also studied. The results suggest the dielectric barrier discharges(DBD) can be an efficient, alternative Plasma source for general surface processing.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.197-206
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• 2000

The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,1-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.

• Clean Technology
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• v.7 no.3
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• pp.203-214
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• 2001

A silicon oxide cleaning characteristic and its mechanism were studied in RF plasma cleaning system with various gases such as $CHF_3$, $CF_4$, Argon, oxygen and mixing gas. The experimental parameters - working pressure (100 mTorr), RF power (300 W, 500 W), electrode distance (5cm, 8cm, 11.5cm), cleaning time (90, 180 seconds), gas flow (50 sccm) were fixed to compare cleaning efficiency by gas types. The results were as follows. First, the argon plasma is retaining only physical sputtering effect and etch rate was low. Second, the oxygen plasma showed good cleaning efficiency in electrode distace of 5cm, 300W, 180secs, but surface roughness increased. Third, $CF_4$ Plasma could get the best cleaning efficiency. Fourth, $CHF_3$ plasma could know that addition gas that can lower the CFx/F ratio need. We could not get good cleaning efficiency in case of added argon to $CHF_3$. But, we could get good cleaning efficiency in case added oxygen.

• Macromolecular Research
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• v.17 no.9
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• pp.703-708
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• 2009

Silk fibroin scaffolds were examined as a biomaterial option for tissue-engineered cartilage-like tissue. In tissue engineering for cartilage repair using a scaffold, initial chondrocyte-material interactions are important for the following cell behaviors. In this study, the surface of nanofibrous silk fibroin (NSF) meshes was modified by a microwave-induced argon plasma treatment in order to improve the cytocompatibility of the meshes used as cartilaginous grafts. In addition, the effects of a plasma treatment on the cellular behavior of chondrocytes on NSF were examined. The plasma treatment resulted in an increase in the hydrophilicity of NSF meshes suggesting that the cytocompatibility of the mesh might be improved. Furthermore, the human articular chondrocytes showed higher viability on the surface-modified NSF meshes. These results suggest that the surface modification of NSF meshes by plasma can enhance the cellular behavior of chondrocytes and may be used in tissue engineering.

• 한국연소학회:학술대회논문집
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• 2013.06a
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• pp.73-76
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• 2013

The inert gas dilution effect for the stability of a stratified propane premixed flame has been experimentally studied. The addition of inert gases to a stratified premixed flame, which used to be very stable without dilution, makes a flame unstable. The lower equivalence ratio on the outer premixed flame and the lower fuel flow rate through the inner nozzle were observed to be the more stable conditions for the stratified premixed flame with nitrogen or argon dilution. It has been interpreted with the flame structure change such as shift of stoichiometric ratio region in a flame.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.156-159
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• 2018

Inductively coupled plasma (ICP) treatment with argon and a mixture of argon and oxygen gases has been used to modify the surface of polycarbonate (PC) substrates. The results showed that the surface contact angle was inversely proportional to the plasma discharge power and that the mixed-gas plasma (gas flow 10:10 sccm, discharge power 60 W) decreased the surface contact angle as low as $18.3^{\circ}$, indicating a large increase in the surface hydrophilicity. In addition, $SnO_2$ thin films deposited on the PC substrate effectively enhanced the ICP plasma treatment, and could also enhance the usefulness of PC in the inner parts of automobiles.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.1
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• pp.21-25
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• 1999

The TiN, thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{\circ}C$. The films were obtained at nitogen flow rates in the range 3-9 sccm with a constant argon flow rate of 20 secm. For the films obtained, the sheet resistance and the chemical binding energy of the films was observed by four-point-probe method and x-ray photoelectron spectroscopy(XPS) depth profiling respectively. In addition, we investigated the relationship between the surface resistance and the chemical nature of the films.

• Journal of the Korean Chemical Society
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• v.38 no.4
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• pp.271-275
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• 1994

The photochemical reaction of aqueous ethanol saturated with argon and carbon monoxide has been investigated using 184.9 nm UV light. The photochemical reaction of $1{\times}10^{-2}$ M aqueous ethanol saturated with argon results in the formation on the acetaldehyde and 2,3-butanediol. The irradiation of the solution saturated with carbon monoxide causes the formation of carbonylation and carboxylation products such as ${\alpha}$-hydroxypropionaldehyde, formaldehyde, glyoxal, formic acid, oxalic acid and glyoxylic acid in addition to above two products. But in the case of concentrated ethanol solutions, the irradiation did not give carbonylation and carboxylation products. The initial quantum yields of the products were determined and probable mechanisms for the reaction were presented on the basis of product analysis.