• 마이크로전자및패키징학회지
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• 제18권4호
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• pp.11-18
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• 2011

3차원 칩 적층 접합에 사용하기 위한 Cu-Cu 금속 저온 접합 공정을 위하여 접합 온도 및 플라즈마 표면 전처리에 따른 열 압착 접합을 수행 하였다. 4점굽힘시험과 CCD 카메라를 이용하여 Cu 접합부의 정량적인 계면접착에너지를 평가하였다. 접합 온도 $250^{\circ}C$, $300^{\circ}C$, $350^{\circ}C$에서 각각 $1.38{\pm}1.06$(상한값), $7.91{\pm}0.27$(하한값), $10.36{\pm}1.01$(하한값) $J/m^2$으로 접합온도 $300^{\circ}C$ 이상에서 계면접착에너지 5 $J/m^2$ 이상의 값을 얻었다. 접합 온도 $300^{\circ}C$ 이하 낮은 온도에서 접합하기 위해 Cu-Cu 열 압착 접합 전 Ar+$H_2$ 플라즈마로 $200^{\circ}C$에서 2분간 표면 전처리 후 $250^{\circ}C$ 조건에서 열 압착 접합할 경우 계면접착에너지 값이 $6.59${\pm}0.03$(하한값) $J/m^2$로 표면 전 처리하지 않은 시험편에 비해 접합 특성이 크게 증가 하였다.

• 한국표면공학회지
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• 제53권2호
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• pp.43-52
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• 2020

Various aging treatments were conducted on AISI 630 martensitic precipitation hardening stainless steel in order to optimize aging condition. Aging treatment was carried out in the vacuum chamber of Ar gas with changing aging temperature from 380℃ to 430℃ and aging time from 2h to 8h at 400℃. After obtaining the optimized aging condition, several nitrocarburizing treatments were done without and with the aging treatment. Nitrocarburizing was performed on the samples with a gas mixture of H₂, N₂ and CH₄ for 15 h at vacuum pressure of 4.0 Torr and discharge voltage of 400V. The corrosion resistance was improved noticeably by combined process of aging and nitrocarburizing treatment, which is attributed to higher chromium and nitrogen content in the passive layer, as confirmed by XPS analysis. The optimized condition is finalized as, 4h aging at 400℃ and then subsequent nitrocarburizing at 400℃ with 25% nitrogen and 4% methane gas for 15h at vacuum pressure of 4.0 Torr and discharge voltage of 400V, resulting in the surface hardness of around 1300 HV_0.05 and α'_N layer thickness of around 11 ㎛ respectively.

• 한국재료학회지
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• 제8권2호
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• pp.131-134
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• 1998

$SiO_{2}$ 기판과 dimethylethylamine alane(DMEAA)을 반응소스로 하여 알루미늄을 증착시켜 증착전 전처리 가스 종류와 수소 플라즈마 처리에 따른 증착속도의 차이와 미세구조에 대하여 연구하였다. TiN기판에 증착된 알루미늄의 증착속도는 증착전 수소 가스에 의한 전처리한 경우 아르곤이나 헬륨에 의한 전처리에 비해 빠른 증착속도를 나타내었다. 이르곤 플라즈마 전처리나 플라즈마 전처리 하지 않고 $SiO_{2}$기판에 알루미늄을 증착하였을 경우에 비해 수소 플라즈마 전처리에 의해 알루미튬증착시 잠복기(incubation time)가 감소하였으며 치밀한 미세조직을 얻을 수 있었다.

• 한국세라믹학회지
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• 제49권6호
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• pp.620-624
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• 2012

The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

• Journal of Ceramic Processing Research
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• 제21권
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• pp.47-52
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• 2020

Graphene was synthesized using rapid thermal chemical vapor deposition (RT-CVD) equipment designed to produce largearea graphene at high speed. The effects of methane (CH₄), argon (Ar), and hydrogen (H₂) gases were investigated between 800 ℃ and 1,000 ℃ during heating and cooling in the graphene synthesis process. The findings reveal that multilayer domains increased due to hydrogen pretreatment with increase in temperature. Furthermore, when pretreated with the same gas, it was confirmed that the post-argon-treated sample cooled from 1,000 ℃ to 800 ℃ had a higher I_D/I_G value than that of the other samples. This result was consistent with the sheet resistance properties of graphene. The sample prepared in methane atmosphere maintained during both the pre-treatment and post-treatment demonstrated the lowest sheet resistance of 787.49 Ω/sq. Maintaining the methane gas atmosphere in the high-temperature region during graphene synthesis by RT-CVD reduced the defects and improved the electrical property.