• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• 한국재료학회지
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• 제8권9호
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• pp.831-836
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• 1998

Ni기 초합금인 B1914로 다결정, 방향성 및 단결정을 제조하여, 상온과 고온에서 이들 결정종류에 따른 변형을 관찰하였다. 이들 결정을 제작하기 위하여 진공 주조로에서 냉각속도와 온도구배를 제어하였으며, 제작된 봉상 시편들은 2단계의 진공열처리를 하고 아르곤가스로 급냉하였다. 동일한 모합금인 B1914로 제조된 결정들은 결정종류에 따라서 뚜렷한 변형(stress-strain)을 나타내었다. 즉, 항복강도와 인장강도는 다결정, 방향성 및 단결정 순으로 뚜렷이 증가하였다. 또한 $600^{\circ}C$에서 모든 결정들은 $\gamma$'의 강화효과로 인해서 가장 높은 741-816MPa의 항복강도를 나타내었으며, 인장강도는 1005-1139MPa이었다.

• 한국식품영양과학회지
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• 제34권9호
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• pp.1308-1313
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• 2005

구기자를 에탄올과 물로 추출하여 항산화와 항고혈압효과를 탐색하였다. 구기자 추출물의 폴리 페놀함량은 물 추출물과 에탄을 추출물에서 9.5 mg/g과 8.7 mg/g으로 나타났으며, HPLC에 의한 Polyphenol 화합물을 분리한 결과 물 추출물과 $60\%$ 에탄올에서 1.7 mg/g과 1.3 mg/g으로 chlorogenic acid가 가장 많이 검출되었다. 항산화효과 실험 중 DPPH는 물 추출물에서 $92.6\%$, 에탄을 추출물에서 $88.8\%$으로 높은 전자공여능을 나타냈으며, ABTS 측정에서는 물 추출물이 에탄을 추출물의 $52.8\%$보다 높은 $76.7\%$로 나타났다. PF는 물 추출물과 에탄을 추출물에서 각각 1.1과 1.0으로 나타났으며, TBARS값은 에탄을 추출물이 $1.5{\times}10^{-3}\;{\mu}M$ 로 대조구 $1.5{\times}10^{-3}\;{\mu}M$보다 낮은 TBARS 값을 나타내어 산화촉진인자를 binding하는 능력이 물 추출물보다 높게 나타났다. ACE 저해 활성은 물 추출물에서 $75.1\%$가, 에탄올을 추출물에서 $71.8\%$의 저해활성을 나타냈다. 이상의 결과로 구기자추출물이 기능성 식품소재로 활용이 가능할 것으로 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 동의생리병리학회지
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• 제21권2호
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• pp.425-431
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• 2007

The purpose of this study was to observe the effects of Achyranthes Radix(AR) and electroacupuncture(EA) in rats with rheumatoid arthritis induced by type II collagen for 28 days. Control group was daily administered 0.9% NaCl 0.5 $m{\ell}$, Group I was daily administered 0.9% NaCl 0.5 $m{\ell}$ to arthritic rats, Group II was orally administered with Achyranthes Radix 500 mg/kg 0.5 $m{\ell}$ to arthritic rats. Group III was given 2 Hz EA of chok samni acupoint(ST36) in the test group for 30 min/days to arthritic rats. Group IV was daily orally administered with Achyranthes Radix 500 mg/kg 0.5 $m{\ell}$ and 2 Hz EA of chok samni acupoint(ST36) in the test group for 30 min/days to arthritic rats. This studies have been designed to evaluate the hind paw edema, assessment of arthritis indices, analgetic effects by analysis of blood chemistry(WBC, CRP, ALP, AST). In each group, histologic observations, Safranin O-fast green stain were observed and analyzed. The following results were obtained. Group II, III, IV were significantly decreased arthritis indices and the rate of paw edema compared with Group I . Especially group IV was the most significantly decreased. The WBC, CRP, AST, ALT was that Group II, III, IV were significantly decreased compared with Group I . In conclusion, Achyranthes Radix and Ea contribute to the improvement of blood chemistry and change in safranin O-fast green by knee joint of arthritic rats.

• 분석과학
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• 제25권5호
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• pp.265-272
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• 2012

기존의 Okamoto cavity를 변형시킨 WR-340 도파관을 사용한 cavity를 제작하고 고출력(2.45 GHz, 2 kW)의 헬륨, 질소 및 아르곤 마이크로파 플라즈마(MIP; Microwave Induced Plasma)를 성공적으로 형성시켰다. 플라즈마 생성의 주요한 요인들은 내부전도체의 직경과 내부전도체와 외부전도체간의 간격, 내부전도체 끝과 토치의 위치 등이 있으며 그 중 헬륨 마이크로파 플라즈마에 대하여 cavity의 디자인을 최적화시키고 그 특성을 조사하였다. ICP(Inductively Coupled Plasma)용 mini 토치와 자체 제작한 나선형흐름토치를 비교 연구한 결과, 헬륨 플라즈마 기체 흐름량은 약 25 L/min~30 L/min로서 서로 비슷하였다. 토치 상단부에 석영관을 덧씌워 공기유입을 막은 결과, 340 nm 근처의 NH분자선들이 없어지거나 감소하였다. 플라즈마의 온도 및 전자밀도를 측정한 결과, 4,350 K의 들뜸 온도와 $3.67{\times}10^{11}/cm^3$의 전자밀도를 얻었다. 이 값들은 기존의 다른 마이크로파 플라즈마와 비슷하거나 약간 작은 값이다. 고출력의 플라즈마로서 수용액을 직접 분석하는 것이 가능하였고 현재 Cl의 검출한계는 116 mg/L 수준으로서 아직 분석적인 최적화가 필요한 단계이다.

• Tuberculosis and Respiratory Diseases
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• 제68권4호
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• pp.212-217
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• 2010

Background: Acyl protein thioesterase-1 (APT1) is a cytosolic protein that may function in the depalmitoylation of numerous proteins, including the Ras family. However, the clinical role of depalmitoyl thioesterase in human cancer is not known. We evaluated the APT1 expression in lung cancer tissue and its clinicopathological findings according APT1 expression pattern. Methods: APT1 expression was examined by immunohistochemistry in the tumor tissue from 79 patients, who had undergone curative surgical removal of the primary lesion; all patients had been diagnosed with stage I non-small cell lung cancer between 1993 and 2004, at Gangnam Severance Hospital, Yonsei University College of Medicine, Seoul, Korea. Results: The APT1 expression was seen in 50 out of 79 (63.3%) cases. The positive APT1 expression was significantly related with histologic subtype and T stage, but was not influenced by differentiation. The positive APT1 expression was not significantly related to patient age, gender, or smoking history. The median follow-up duration was 10.0 years; the 5-year survival rate was 71.0%. The positive APT1 expression group showed significantly worse overall survival and worse disease-free survival without statistical significance. Conclusion: We conclude that positive APT1 expression in stage I lung cancer after surgery is closely associated with overall survival. To evaluate APT1 as a prognostic marker in lung cancer, comprehensive studies on advanced stage cases are needed.

• 방사성폐기물학회지
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• 제8권1호
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• pp.41-48
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• 2010

전해정련공정을 통해 생산된 우라늄 전착물은 약 30%의 용융염을 포함하고 있으므로, 순수한 우라늄을 회수하여 금속 잉곳으로 용이하게 제조하기 위해서는 용융염을 먼저 제거하는 공정이 필요하다. 우라늄 전착물의 염증류 거동을 고찰하기 위해서는 염증류의 주요 공정변수인 유지온도와 진공압의 염제거율에 대한 영향를 고찰해야 한다. 이전 연구에서 우라늄전착물에 대한 염증류 거동에 대해 Hertz-Langmuir 관계식을 적용하여 각 용융염의 휘발 조건에 대해 염휘발계수를 얻을 수 있었으며 이로부터 우라늄 전착물에 대해 99% 이상의 염제거율을 나타내는 염증류공정의 조업조건을 도출하였다[1]. 한편, 염증류 장치에서 사용되는 재질인 스테인리스강에 대해 우라늄 전착물에서 염휘발된 우라늄 금속이 스테인리스강의 주성분인 철, 니켈, 크롬 등과 공정(eutectic melt)을 형성하지 않는 온도에서 염증류공정을 수행해야 하는 제한 조건이 따른다. 이번 연구에서는 우라늄 금속과 스테인리스강과의 반응성을 검토함으로써 우라늄 전착물의 염을 99% 이상 제거할 수 있는 조건을 확인하였다. 그리고 염증류 속도를 증진시키며 휘발된 염을 더 효율적으로 회수하기 위해 공급되는 알곤 흐름에 의한 염증류 장치의 열해석을 수행함으로써 알곤 흐름에 의한 우라늄 전착물에 대한 염증류 거동을 고찰하였다.

• 자원리싸이클링
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• 제26권6호
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• pp.3-9
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• 2017

본 연구에서는 anode로 Kroll 공정 처리된 Ti 스폰지를 사용하여 아크 전류, 아크 전압, 플라즈마 가스 종류에 따른 플라즈마 아크 재용해 거동을 조사하였다. 진공펌프의 토출 압력 범위($200{\sim}300kgf/cm^2$)에서는 토출 압력 증가에 따라 주어진 아크 길이에서 아크 전압이 크게 달라지지 않았다. 이것은 작업하는 동안 진공챔버내 압력이 거의 변화하지 않고, 주어진 분위기 압력을 잘 유지함을 의미한다. 여러가지 아크 전류 조건(700~900A)에서, 아크 전류 증가에 따라 아크 전압이 약간 증가하였고, anode 재료변화에 대한 효과도 이전 연구결과와 비교하였다. 분위기 가스가 Ar에서 He으로 변경되는 경우에는 정상상태의 출력이 2배 정도 향상되는 효과가 관찰되었다. 플라즈마 아크 장치의 출력 증가는 Ti 스폰지의 재용해 속도 증가와 함께 잉곳 표면도 양호해졌다. New 스크랩인 타이타늄과 old 스크랩인 지르코늄 합금을 플라즈마 아크 재용해한 결과, 매우 양호한 표면을 갖는 잉곳을 제조할 수 있었다.