• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.127-128
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• 2009

CCP방식의 식각에 있어서 CF4/O2 Plasma Etch에 Ar을 첨가함으로써 Etch특성이 어떻게 변화하는지를 조사하였다. FE-SEM를 이용하여 Etch Profile를 측정하였다. 또한 Elipsometer와 Nanospec을 이용하여 Etch rate를 측정하였다. Ar의 비율이 전체의 47%정도를 차지하였을 때까지 Etch Profile이 향상되었다가 그이후로는 다시 감소하는 것을 볼 수 있었다. Ar을 첨가할수록 etch rate은 계속 향상되었다. Ar을 첨가하는 것은 물리적인 식각으로 반응하여 Etch rate의 향상과 적정량의 Ar을 첨가했을 때 Etch profile이 향상되는 결과를 얻었다.

• Korean Chemical Engineering Research
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• v.51 no.6
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• pp.755-759
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• 2013

The etch rate and etch profile of Si was investigated when Ar was added to an $SF_6$ plasma in the etch step of the Bosch process. A Si substrate was etched with the Bosch process using $SF_6$ and $SF_6$/Ar plasmas, respectively, in the etch step to analyze the effects of Ar addition on the etch characteristics of Si. When the Ar flow rate in the $SF_6$ plasma was increased, the etch rate of the Si substrate increased, had a maximum at 20% of the Ar flow rate, and then decreased. This was because the addition of Ar to the $SF_6$ plasma in the etch step of the Bosch process resulted in the bombardment of Ar ions on the Si substrate. This enhanced the chemical reactions (thus etch rates) between F radicals and Si as well as led to sputtering of Si particles. Consequently, the etch rate was higher more than 10% and the etch profile was more anisotropic when the Si substrate was etched with the Bosch process using a $SF_6$/Ar (20% of Ar flow rate) plasma during the etch step. This work revealed a feasibility to improve the etch rate and anisotropic etch profile of Si performed with the Bosch process.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.4
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• pp.35-40
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• 2012

In this study, the ultraviolet (UV) intensity of polymer insulator was measured using the Anti-Reflective (AR) coating lens on the occurrence of corona discharge. The UV intensity was compared before and after the AR coating. Under the 200-260[nm] of UV lens, the reflection rate before AR coating was 7.5~5.5[%] with 85-89[%] of transmission rate. After AR coating, however, the reflection rate decreased to 1.3~1.22[%] with improved transmission (97.4~97.6[%]). Then, the UV intensity by distance was measured in the polymer insulator. According to the measurement, the UV intensity increased 6.5 times at 37.5[%] of Vm/Vbd with 5[m] of distance. As distance increased, the growth rate declined. As high voltage increased, in addition, AR coating was less effective due to the count error caused by the UV sensor pulse signal overlap. Therefore, it appears that it would be more effective to detect corona discharge with 5[m] or less of distance at diagnosis of power facilities by AR coating and UV sensor sensitivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.863-865
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• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.206-210
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• 2010

Al-doped ZnO thin films were deposited with various Ar flow rate by RF magnetron sputtering, and theire properties were studied. A high-quality thin film was obtained by controlling the Ar flow rate, and the influence of the Ar flow rate on the Al-doped ZnO thin film was confirmed. In all Al-doped ZnO thin films, light transmittance had above 80%. Through Hall measurement and X-ray photoelectron spectrometer, the sample of 60 sccm, which had the lowest resistivity, showed the lower Al concentration. This result was attributed to oxygen vacancy rather than Al concentration.

• Proceedings of the Korea Information Processing Society Conference
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• 2011.04a
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• pp.717-720
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• 2011

고속 네트워크 환경에서 AR UDT(Adaptive Rate control UDT)는 표준 전송 프로토콜인 TCP에 비해 뛰어난 성능을 보인다. UDT(UDP-based Data Transfer)를 기반으로 하는 AR UDT의 혼잡제어는 네트워크 상태를 예측하여 패킷 간 전송시간을 변화시킴으로써 기존 UDT보다 향상된 성능을 보인다. 그러나 AR UDT는 네트워크 상태 예측의 오차가 클 뿐만 아니라 rate control만을 공격적으로 조절하기 때문에 수신 버퍼의 초과로 인해 안정적인 성능을 기대하기 어렵다. 본 논문에서는 AR UDT환경에서 네트워크 상태에 따라 적응적으로 혼잡제어를 하는 기법을 제안한다. RTT(Round Trip Time)의 변화량에 따라 네트워크 상태를 예측하여 flow control과 rate control을 적응적으로 조절한다. 네트워크 시뮬레이션 결과를 통하여 AR UDT에 비해 전송속도와 안정성이 향상되었음을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.206-209
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• 2003

The purpose of AR and HR coating is acquire the very low reflection rate and the high reflection rate through the deposition of a thin film using the refraction ofmaterial. Basically if the high refractive material and the low refractive material are chosen and the condition for the experiment is determined, then we solve theproject with the optical design and multi thin film coating. First of all, we choose $SiO_2$for the low refractive material and $TiO_2$ for the high refractive material and apply Sputtering System easy to control the refraction rate and excellent in reconstruction to the equipment of thin film multiplication. For the control of the refraction rate and growth rate we modify RF Power and the ratio of Gas(Ar:O2), And we use Ellipsometer for estimation and analysis of the refraction rate and growth rate and AFM&SEM for the analysis of surface and component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• The Journal of the Acoustical Society of Korea
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• v.31 no.2
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• pp.93-99
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• 2012

For speech coding, a vocal tract is modeled using Linear Predictive Coding (LPC) coefficients. The LPC coefficients are typically transformed to Line Spectral Frequency (LSF) parameters which are advantageous for linear interpolation and quantization. If multidimensional LSF data are quantized directly using Vector-Quantization (VQ), high rate-distortion performance can be obtained by fully utilizing intra-frame correlation. In practice, since this direct VQ system cannot be used due to high computational complexity and memory requirement, Split VQ (SVQ) is used where a multidimensional vector is split into multilple sub-vectors for quantization. The LSF parameters also have high inter-frame correlation, and thus Predictive SVQ (PSVQ) is utilized. PSVQ provides better rate-distortion performance than SVQ. In this paper, to implement the optimal predictors in PSVQ for voice storage devices, we propose Multi-Frame AR-model based SVQ (MF-AR-SVQ) that considers the inter-frame correlations with multiple previous frames. Compared with conventional PSVQ, the proposed MF-AR-SVQ provides 1 bit gain in terms of spectral distortion without significant increase in complexity and memory requirement.