• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.919-921
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• 1998

In Color AC Plasma Display Panel(PDP). Low luminous efficiency is a major problem. We measured luminous efficiency of PDP as a function of the Ar mixing ratio. Our results show that efficiency has improved by $5{\sim}10%$ at the condition of 0.5% Ar mixing ratio, compared with Ne-Xe(4%) or He-Ne-Xe(4%) (He:Ne = 7:3) gas.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.159-160
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• 2007

저온 플라즈마 침탄 처리 후 연속적인 공정으로 저온 플라즈마 질화를 실시하여 내식성과 표면경도를 향상시키는 처리에서 질화처리 시 Ar 가스가 표면특성에 미치는 영향을 조사 하였다. 모든 시편의 경도가 미처리재 보다 약4배 증가하였으며, Ar가스의 양이 증가할수록 N의 침투깊이가 깊어졌다. 전체 경화증의 두께는 거의 일정하였고, 경화층은 모재보다 내식성이 증가되어 단면조직사진에서 밝게 나타났다.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.90-94
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• 2015

In this study, the characterizations of oxide contact hole etching are investigated with C₄F₈/O₂/Ar and CH₂F₂/C₄F₈/O₂/ Ar plasma. As the percent composition of C₄F₈ in a C₄F₈/O₂/Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the C_xF_y polymer layer retards the reaction of oxygen atoms with PR. Adding CH₂F₂ into the C₄F₈/O₂/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90°, and no visible residue was seen in the SEM image at a C₄F₈/(C₄F₈+O₂) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.

• 한국진공학회지
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• 제17권5호
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• pp.426-434
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• 2008

고밀도 유도결합 플라즈마 장치의 $SiH_4/O_2/Ar$방전에 대한 공간 평균 시뮬레이터를 제작하였다. 제작된 시뮬레이터는 $SiH_4/O_2/Ar$ 플라즈마 방전에서 발생되는 전자, 양이온, 음이온, 중성종, 그리고 활성종들에 대해 공간 평균한 유체 방정식을 기반으로 하고 있으며, 전자가열 모델은 anomalous skin effect를 고려한 파워 흡수 모델을 적용하여 전자가 흡수하는 고주파 파워량을 결정하였다. 완성된 시뮬레이터에서 RF-파워와 압력 변화에 대한 하전입자, 중성종, 활성종들의 밀도 변화 및 전자 온도 의존성을 계산하였다.

• 자원리싸이클링
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• 제25권3호
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• pp.49-54
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• 2016

본 연구에서는, 아크 플라즈마 정련을 이용하여 지르콘샌드($ZrSiO_4$)를 지르코니아($ZrO_2$)와 실리카($SiO_2$)로 분리하였다. 실리카를 마이크로웨이브 침출을 통해 제거하고 고순도의 지르코니아를 얻었다. 플라즈마 퓨전은 두 가지 공정을 순차적으로 진행하였다. Ar 100% 분위기에서 환원 공정을 거친 후, Ar-$H_2$ 혼합 가스를 통해 정련과정을 거쳤다. 진공 챔버 내에서 냉각 후 지르코니아와 실리카로 이루어진 고상을 얻었다. 마이크로웨이브 침출을 위해 $240^{\circ}C$, 20% 황산용액을 사용하였다. 분석 결과 고순도(98.6%)의 지르코니아를 얻을 수 있었다.

• 산업융합연구
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• 제21권7호
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• pp.83-92
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• 2023

유전체 전위장벽방전방식에 의한 플라즈마 젯의 블렛 형상은 인가되는 유량과 전기장의 크기에 따라 달라지고 이러한 변화는 DBD 플라즈마 젯의 밀도차이에 의한 스펙트럼 분포의 차이로 나타난다. 발생된 플라즈마 젯의 스펙트럼의 분석을 통한 활성종의 발생과 강도의 차이는 장치를 활용하는데 있어서 중요한 요소이다. 본 논문에서는 Ar가스를 이용한 대기압 볼륨 DBD방식의 플라즈마 젯 발생장치를 제안된 설계방법에 따라 구성하였다. 플라즈마 젯의 발생을 위한 유량의 의존도를 규명하기 위한 Ar가스의 유동해석을 시뮬레이션을 통해 확인하였고 프로토타입 시스템에서는 MFC를 통한 유량제어를 통해 최적의 플라즈마 젯 불렛형상을 발생시키고 발생된 플라즈마 젯의 특성을 분석하기 위해 스펙트로미터를 이용한 플라즈마 젯의 특성을 분석하였다. 제안된 시스템의 설계방법을 통한 장치에서 최적의 플라즈마 젯 형상 확립방법과 EOS 상에서 활성종에 대한 결과를 확인하였다.

• Applied Science and Convergence Technology
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• 제27권1호
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• pp.9-13
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• 2018

Samples of anodic oxide film used in semiconductor and display manufacturing processes were prepared at different electrolyte temperatures to investigate the corrosion resistance. The anodic oxide film was grown on aluminum alloy 6061 by using a sulfuric acid ($H_2SO_4$) electrolyte of 1.5 M at $0^{\circ}C$, $5^{\circ}C$, $10^{\circ}C$, $15^{\circ}C$, and $20^{\circ}C$. The insulating properties of the samples were evaluated by measuring the breakdown voltage, which gradually increased from 0.43 kV ($0^{\circ}C$) to 0.52 kV ($5^{\circ}C$), 1.02 kV ($10^{\circ}C$), and 1.46 kV ($15^{\circ}C$) as the electrolyte temperature was increased from $0^{\circ}C$ to $15^{\circ}C$, but then decreased to 1.24 kV ($20^{\circ}C$). To evaluate the erosion of the film by fluorine plasma, the plasma erosion and the contamination particles were measured. The plasma erosion was evaluated by measuring the breakdown voltage after exposing the film to $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas. With exposure to $CF_4/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.41 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0.83 kV. With exposure to $NF_3/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.38 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0. 77 kV. In addition, for the entire temperature range, the breakdown voltage decreased more when sample was exposed to $NF_3/O_2/Ar$ plasma than to $CF_4/O_2/Ar$ plasma. The decrease of the breakdown voltage was lower in the anodic oxide film samples that were grown slowly at lower temperatures. The rate of breakdown voltage decrease after exposure to fluorine plasma was highest at $20^{\circ}C$, indicating that the anodic oxide film was most vulnerable to erosion by fluorine plasma at that temperature. Contamination particles generated by exposure to the $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas were measured on a real-time basis. The number of contamination particles generated after the exposure to the respective plasmas was lower at $5^{\circ}C$ and higher at $0^{\circ}C$. In particular, for the entire temperature range, about five times more contamination particles were generated with exposure to $NF_3/O_2/Ar$ plasma than for exposure to $CF_4/O_2/Ar$ plasma. Observation of the surface of the anodic oxide film showed that the pore size and density of the non-treated film sample increased with the increase of the temperature. The change of the surface after exposure to fluorine plasma was greatest at $0^{\circ}C$. The generation of contamination particles by fluorine plasma exposure for the anodic oxide film prepared in the present study was different from that of previous aluminum anodic oxide films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.512-513
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• 2013

Space and time resolved discharge images from an atmospheric pressure non-thermal Ar plasma jet have been observed by a ICCD camera to investigate the electron temperatures. Plasma jet device consisting of a syringe electrode inserted into a glass tube has been introduced. A high voltage is applied to the syringe electrode. The syringe needle has an outer diameter of 1.8 mm, an inner diameter of 1.3 mm, and a total length of 39.0 mm. The needle is inserted into a glass tube of outer diameter 2.4 mm and inner diameter 2.0 mm, and a total length of 80.0 mm. The Ar plasma propagation speed on the cathode has been shown to be about 2.1 km/s at input discharge voltage of 3.6 kV, discharge current of 19.9 mA and driving frequency of about 45 kHz. Particularly, the electron temperature in plasma jet were found to be about 1.8 eV at input discharge voltage of 3.6 kV and driving frequency of 45 kHz, respectively.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.486-491
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• 2008

The plasma processing is applied to many industrial fields as thin film deposition or surface treatment technique. In this study, we investigated large-area uniformed surface treatment of PET film at low temperature by using Scanning Plasma Method(SPM). Then, we measured difference and distribution of temperature on film's surface by setting up a thermometer. We studied the condition of plasma for surface treatment by examining intensity of irradiation of uniformed plasma. And we compared contact angles of treated PET film by using Ar and $O_2$ plasma based low temperature. In our result, surface temperature of 3-point of treating is low temperature about $22^{\circ}C$, in other hands, there is scarcely any variation of temperature on film's surface. And by using Ar plasma treatment, contact angle is lower than untreatment or $O_2$ plasma treatment. In case of PET film having thermal weak point, low temperature processing using SPM is undamaged method in film's surface and uniformly treated film's surface. As a result, Ar plasma surface treatment using SPM is suitable surface treatment method of PET film.

• 전기학회논문지
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• 제65권7호
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• pp.1211-1217
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• 2016

Discharge characteristics of inductively coupled plasma were investigated by using electrostatic probe and fluid simulation. The Inductively Coupled Plasma source driven by 13.56 Mhz was prepared. The signal attenuation ratios of the electrostatic probe at first and second harmonic frequency was tuned in 13.56Mhz and 27.12Mhz respectively. Electron temperature, electron density, plasma potential, electron energy distribution function and electron energy probability function were investigated by using the electrostatic probe. Experiment results were compared with the fluid simulation results. Ar plasma fluid simulations including Navier-Stokes equations were calculated under the same experiment conditions, and the dependencies of plasma parameters on process parameters were well agreed with simulation results. Because of the reason that the more collision happens in high pressure condition, plasma potential and electron temperature got lower as the pressure was higher and the input power was higher, but Electron density was higher under the same condition. Due to the same reason, the electron energy distribution was widening as the pressure was lower. And the electron density was higher, as close to the gas inlet place. It was found that gas flow field significantly affect to spatial distribution of electron density and temperature.