• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.223-224
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• 2005

In this paper, multiple regression analysis of the electrical characteristics for $HfO_2$ thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as, the accumulation capacitance and the hysteresis index, are the main factors to determine the characteristics of $HfO_2$ thin films. The input factors on the process are the substrate temperature, Ar gas flow, and $O_2$ gas flow. For statistical analysis, the design of experiments was carried out and the effect plots were used to analyze the manufacturing process. This methodology can predict the electrical characteristics of the thin film growth mechanism related to the process conditions.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.126-133
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• 1997

In order to apply for the gas sensing layer and the piezoelectric thin film devices, we studied the effects of magnetron sputtering conditions and annealing temperature on the electrical and structual characteristics of the ZnO thin film. The optimal deposition conditions, in order to obtain a c axis of the ZnO (002) phase thin film which is perpendicular to SiO$_{2}$/Si substrate, were like these ; substrate temperature 150.deg. C, chamber pressure 2 mtorr, R.F. power 300 watts, gas flow ratio 0.4[O$_{2}$(Ar + $O_{2}$)]. When the ZnO thin film was annealed in 600.deg. C, $O_{2}$ gas ambient for 1 hr, the resistivity was 2.6 x 10$^{2}$.ohm.cm and the grain size of ZnO thin film was less than 1 .mu.m. So the ZnO thin film acquired from above conditions can apply for the gas sensing layer which require a c axis perpendicular to the substrate surface.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.216-221
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• 1998

A study on induction plasma deposition with ceramic materials, yttria-stabilized-zirconia ZrO$_2$-Y$_2$O$_3$ (m.p 264O $^{\circ}C$), was conducted with a view developing a new method for nuclear fuel fabrication Before making dense pellets more than 96％TD., the spraying condition was optimized through the process parameters, such as chamber pressure, plasma plate power powder spraying distance, sheath gas composition, probe position, particle size and powders different morphology. The results with a 5mm thick deposit on rectangular planar graphite substrates showed a 97.11％ theoretical density when the sheath gas flow rate was Ar/H$_2$120/20 l/min, probe position 8cm, particle size -75 ${\mu}{\textrm}{m}$ and spraying distance 22cm by AMDRY146 powder. The degree of influence of the main effects on density were powder morphology. particle size, sheath gas composition, plate power and spraying distance, in that order. Among the two parameter interactions, the sheath gas composition and chamber pressure affects density greatly. By using the multi-pellets mold wheel type, the pellet density did not exceed 94%T.D., owing to the spraying angle.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.147-153
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• 1998

Tungsten nitride is very attractive as absorber for X-ray lithographic mask and as a diffusion barrier for interconnecting metallization in Si VLSI technology. Microstructure of tungsten nitride films prepared by RF magnetron sputtering has been investigated as a function of deposition parameter. The crystal structure of sputtered films on silicon nitride membrane depends strongly on the NJAr gas flow ratio(0~18%1, gas pressure(l0~43mTorr). RF power (60~150W), target-substrate distance(4~8cm). Tungsten nitride films deposited at the $N_2/Ar$ gas flow ratio(- 10%). gas pressure(~10mmTorr), RF power(~150W) and target-substrate distance(6cm) are amorphous, but at other conditions are almost rough -surfaced polycrystalline. Amorphous films are very smooth($3.1\AA$ rms) and expected to be excellent absorber for X-ray mask.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.19-22
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• 2013

The purpose of this study is to develop a system that can monitor the amounts of energy consumption during CVD and etching process for semiconductor manufacturing. Specifically, this system is designed to measure the $CO_2$ emission amounts quantitatively by measuring the flow rate of gas used and amount of power consumed during the processes. The processes of CVD equipment can be classified generally into processing step and cleaning step and all the two steps were monitored. In CVD and etcher equipments, various gases including Ar and $O_2$ are used, but Ar, $O_2$ and He were monitored with the use of the LCI data of Korea Environmental Industry & Technology Institute and carbon emission coefficients of EcoInvent. As a result, it was found that the carbon emission amounts of CVD equipment for Ar, $O_2$ and He were $0.030kgCO_2/min$, $4.580{\times}10^{-3}kgCO_2/min$ and $6.817{\times}10^{-4}kgCO_2/min$, respectively and those of etcher equipment for Ar and $O_2$ are $5.111{\times}10^{-3}kgCO_2/min$ and $7.172kgCO_2/min$, respectively.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1919-1921
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• 1999

AlN thin films were fabricated by sputter for the application of MIS device with Al/AlN/Si structure. We controled that sub-temperature room-temperature. Sputtering pressure 5 mTorr, flow ratio Ar:$N_2$=1:1(4sccm:4sccm), and appended hydrogen gas $0{\sim}5%$. AlN thin films thickness fabricated to maintain $2700{\AA}$ time control. Before the experiment remove to the contaminated material use the Ultrasonic every 10 minute use the acetone and ethanol, then use the HF remove oxide-substance at 10 second. To analyze characteristic of the $H_2$ gas addition period, C-V and I-V characteristic make and experiment $H_2$ gas at addition period progressive capability of I-V and C-V characteristic.

• Korean Journal of Materials Research
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• v.21 no.3
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• pp.149-155
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• 2011

We investigated tribological characteristics of diamond-like carbon (DLC) in a condition with carbon nanotube (CNT) content of 1wt% in aqueous solution. Si-DLC films were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process on Al6061 aluminum alloy. In this study, the deposition of DLC films was carried out in vacuum with a chamber pressure of 10-5 to 10-3 Torr achieved by mechanical pump followed by turbo molecular pump. The surface adsorbed oxygen on the Aluminum substrates was removed by passing Ar gas for 10 minutes. The RF power was maintained at 500W throughout the experiment. A buffer layer of HMDSO was deposited on the substrate to improve the adhesion of DLC coating. At this point CH4 gas was introduced in the chamber using gas flow controller and DLC coating was deposited on the buffer layer along with HMDSO for 50 min. The thickness of 1 ${\mu}m$ was obtained for DLC films on aluminum substrates The tribological properties of as synthesized DLC films were analyzed by wear test in the presence of dry air, water and lubricant such as CNT ink.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.126-129
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• 2007

The particle formation using pyrolysis has many advantages over other particle manufacturing techniques. The particles by pyrolysis have relatively uniform size and chemical composition. Also, we can easily produce high purity particles. Thus, we studied the formation of silicon particles by pyrolysis of 50% $SiH_4$ gas diluted in Ar gas. A pyrolysis furnace was used for the thermal decomposition of $SiH_4$ gas at $800^{\circ}C$ and atmospheric pressure. The aerosol flow from furnace is separated into two ways. The one is to the Scanning Mobility Particle Sizer (SMPS) for particle size distribution measurement and the other is to the particle deposition system. The produced silicon particles are deposited on the wafer in the deposition chamber. SEM measurement was used to compare the particle size distribution results from the SMPS. Depending on the experimental conditions, particles of high concentration in the $30\sim80$ nm size range were generated.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.280-284
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• 2015

Among many the oxynitrides, TiNO and AlCrNO, have diverse applications in different technological fields. We prepared TiNO/AlCrNO/Al thin films on aluminum substrates using the method of dc reactive magnetron sputtering. The reactive gas flow, gas mixture, and target potential were applied as the sputtering conditions during the deposition in order to control the chemical composition. The multi-layer films have been prepared in an Ar and O₂+N₂ gas mixture rate. The surface properties were estimated by performing scanning electron microscopy (SEM). At a wavelength range of 0.3~2.5 μm, the exact composition and optical properties of thin films were measured by Auger electron spectroscopy (AES) and Ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry. The optimal absorptance of multi-layer films was exhibited above 95.5% in the visible region of the electromagnetic spectrum, and the reflectance was achieved below 1.89%.