• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.909-913
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• 2002

The luminance and discharge characteristics of ac PDP may be significantly affected by a small amount of impurity gas in working gas. These impurity gases such as O$_2$, O, C and H$_2$ can be mixed in the manufacturing and /or discharge process. In this paper a small amount of impurity gas in acPDP are introduced quantitatively and the relationship between the amount of impurity gas and the luminance/discharge characteristics are investigated. The luminous efficiency decreased seriously with increase in the partial pressure of impurity gases, especially in H$_2$, O$_2$ and CO$_2$. Under the condition of the impurity gas ratio of 2${\times}$10$\^$-3/ for Ar, N2, H$_2$, CO$_2$ and O$_2$, the luminous efficiency decreased about 8%, 8%, 32%, 36% and 50%, respectively.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.177-183
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• 2010

We report on the deposition of ZnO films using a metal organic chemical vapor deposition (MOCVD) as a function of pushing pressure and kind of reactant such as oxygen gas and water A diethylzinc (DEZ) is supplied and controlled by Ar pushing pressure through bubbling system. Oxygen gas and water are used as reactant in order to form oxidation. We knew that the surface roughness is related in the process conditions such as reactant kind and DEZ flow rate. A substrate temperature has little role of surface roughness with $O_2$ reactant. However, $H_2O$ reactant makes it to increase over the 20 times. We could get the maximum roughness of 39.16 nm at the 90 sccm of DEZ Ar flow rate, the 8 Pa of $H_2O$ vapor pressure, and the $140^{\circ}C$ of substrate temperature. In this paper, we investigated the ZnO films for the application to the light absorption layer of solar cell layer.

• Transactions of Materials Processing
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• v.22 no.6
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• pp.334-339
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• 2013

Direct Laser Melting is a prototyping process whereby a 3-D part is built layer wise by melting the metal powder with laser scanning. This process is strongly influenced by the shielding gas and the laser operating parameters such as laser power, scan rate, layering thickness, and rescanning. The shielding gas is especially important in affecting the microstructure and mechanical properties. In the current study, fabrication experiments were conducted in order to analyze the effect of shielding gas on the forming characteristics of direct laser melting. Cylindrical parts were produced from a Fe-Ni-Cr powder with a 200W fiber laser. Surface quality, porosity and hardness as a function of the layering thickness and shield gas were evaluated. By decreasing the layering thickness, the surface quality improved and porosity decreased. The selection of which shield gas, Ar or $N_2$, to obtain better surface quality, lower porosity, and higher hardness was examined. The formability and mechanical properties with a $N_2$ atmosphere are better than those parts formed under an Ar atmosphere.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.18 no.3
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• pp.355-362
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• 2020

The corrosion behavior of the Inconel X-750 alloy was investigated for its potential application under a Cl₂-O₂ mixed gas flow in an Ar atmosphere. The corrosion rate was found to be negligible at temperatures up to 400℃ under a flow rate of 30 mL·min^-1 Cl₂ + 170 mL·min^-1 Ar, whereas an exponential increase was observed in the corrosion rate at temperatures greater than 500℃. The suppression of the corrosion reaction due to the presence of O₂ was verified experimentally at flow rates of 30 mL·min^-1 Cl₂ (4.96 g·m^-2·h^-1), 20 mL·min^-1 Cl₂ + 10 mL·min^-1 O₂ (2.02 g·m^-2 ·h^-1), and 10 mL·min^-1 Cl₂ + 20 mL·min^-1 O₂ (1.34 g·m^-2·h^-1) under a constant Ar flow rate of 170 mL·min^-1 at 600℃ for 8 h. The surface morphology analysis results revealed that porous surfaces with tunnel-type holes were produced under the Cl₂-O₂ mixed-gas condition. Furthermore, the effects of the Cl₂ flow rate on the corrosion rate were investigated, indicating that its impact was negligible within the range of 5-30 mL·min^-1 Cl₂ at 600℃.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.10
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• pp.1-7
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• 2018

Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.146-152
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• 2003

The waste ferrites from magnetic core manufacturing process were used to $CO_2$gas decomposition to avoid the greenhouse effects. The waste ferrites are the mixed powder of Ni-Zn and Mn-Zn ferrites core. In the reduction of ferrites by 5% $H_2/Ar$ mixed gas, the weight loss of ferrites was about 14~16wt%. After the$CO_2$gas decomposition reaction, the weight of the reduced ferrites was increased up to 11wt%.$CO_2$gas was decomposed by oxidation of Fe and FeO in reduced compound and the phase of the waste ferrite was changed to spinel structure. A new technique capable of$CO_2$decomposition as low cost process through utilizing waste ferrite was development.

• Journal of the Korean Chemical Society
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• v.46 no.2
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• pp.164-168
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• 2002

SrGa$_2$S$_4$ : Eu is a green emitting phosphor which is applied for field emission display, and cathodoluminescence. Conventionally, SrGa$_2$S$_4$ : Eu is synthesized by solid state reaction, in which a mixture of SrCO$_3$, Ga$_2$O$_3$, and Eu$_2$O$_3$ is fired at high temperatures under flowing H$_2$S and Ar gases. In this study,SrGa$_2$S$_4$ : Eu phosphor is synthesized by using a decomposition method, where SrS, Eu complex, and Ga com-plex are used. The advantage of this method is that toxic H$_2$S gas and Ar gas are not used. The synthetic con-ditions and luminescent properties of SrGa$_2$S$_4$ : Eu phosphor are also investigated.

• Journal of Hydrogen and New Energy
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• v.16 no.2
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• pp.180-190
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• 2005

The PSA cycle was performed for the separation of binary gas mixture $H_2/Ar$ (80%/20%) using the six-step two-bed process. Adsorption equilibrium contains a LRC model for equilibrium adsorption isotherms and a LDF model for mass transfer. Aspen ADSIM, simulator was applied to predict the separation performance. The effect of cycle parameters such as feed rate, adsorption pressure and P/F ratio on the separation of hydrogen has been studied in experiment and simulation. In the results, maximize the recovery of hydrogen as a high purity was 13LPM feed flowrate, 120sec adsorption time, 11atm adsorption pressure and 0.1 P/F ratio in a cyclic steady-state come out since 10th cycle.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.116-121
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• 2007

TiNi shape memory alloy(SMA) was fabricated by PLD(plused laser deposition) using equiatomic TiNi target. Composition and crystallization of TiNi thin films which were fabricated in ambient Ar gas(200m Torr)and vacuum($5{\times}10^{-6}\;Torr$) were investigated. Composition of TiNi thin films was characterized by energy-dispersive X-ray spectrometry (EDXS) and crystallization was confirmed by X-ray diffraction (XRD). The composition of films depends on the distance between target and substrate but does not sensitively depend on the substrate temperature. It is found that the composition of films can be easily controlled when substrate is placed inside plume in ambient Ar gas. It is also found that the in situ crystallization temperature ($ca.\;400^{\circ}C$) in ambient Ar gas is lowered in comparison with that of TiNi film prepared under vacuum. The low crystallization temperature in ambient Ar gas makes it possible to prepare the crystalline TiNi thin film without contamination.

• Journal of Radiation Protection and Research
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• v.29 no.1
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• pp.25-31
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• 2004

Results of EGS4 based calculations to study the spatial resolution of gas detectors are described. The calculations include radial distribution of electrons generated by photons of various energies penetrating into variable thickness of Ar and Xe gas layers. Given a desired spatial resolution, the maximum allowed thickness of gas layer for each energy level is determined. In order to obtain 0.1mm spatial resolution, the maximum thickness for the Ar gas is found to be 2mm for photon energies below 14keV while the optimum energy of photons for Xe gas with the same thickness is about 45keV. The results of calculations performed to compare the number of electrons generated by CsI coated micro-channel plate and the number of electrons generated by the Ar and Xe gas layers are described. The results show that the number of electrons generated by the gases is about 10 times higher than the one generated by CsI coated micro-channel plate. A few sample gray scale images generated by these calculations are included.