• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.4
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• pp.549-554
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• 2013

With the synthesis of graphene on Cu using CVD, it was tried to show the behavior of graphene growth depending on the size and orientation of Cu grain. It was found out that even under the same temperature and pressure the use of different gases influences on the diffusion rate of Cu. As compared to Ar gas, Cu grain growing bigger under $H_2$ and $CH_4$ was resulted in bigger graphene grain. Corrosion resistance was evaluated by potentiodynamic polarization test in room temperature and found out that the graphene on Cu was more stable in order of 10 than pure Cu due to the chemical stability of graphene. The future work of this research will focus on the synthesis of graphene having no defects including grain boundaries, and its engineering use.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.246-249
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• 2013

Nano-sized ${\beta}$-SiC nanoparticles were synthesized combined with a sol-gel process and a carbothermal process. TEOS and carbon black were used as starting materials for the silicon source and carbon source, respectively. $SiO_2$ nanoparticles were synthesized using a sol-gel technique (Stober process) combined with hydrolysis and condensation. The size of the particles could be controlled by manipulating the relative rates of the hydrolysis and condensation reactions of tetraethyl orthosilicate (TEOS) within the micro-emulsion. The average particle size and morphology of synthesized silicon dioxide was about 100nm and spherical, respectively. The average particles size and morphology of the used carbon black powders was about 20nm and spherical, respectively. The molar ratio of silicon dioxide and carbon black was fixed to 1:3 in the preparation of each combination. $SiO_2$ and carbon black powders were mixed in ethanol and ball-milled for 12 h. After mixing, the slurries were dried at $80^{\circ}C$ in an oven. The dried powder mixtures were placed in alumina crucibles and synthesized in a tube furnace at $1400{\sim}1500^{\circ}C$ for 4 h with a heating rate of $10^{\circ}C$/min under flowing Ar gas (160 cc/min) and furnace cooling down to room temperature. SiC nanoparticles were characterized by XRD, TEM, and SAED. The XRD results showed that high purity beta silicon carbide with excellent crystallinity was synthesized. TEM revealed that the powders are spherical shape nanoparticles with diameters ranging from 15 to 30 nm with a narrow distribution.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.283.2-283.2
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• 2013

The variation of chemical and interfacial state during the growth of Ta2O5 films on the Si substrate by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor Ta(NtBu)(dmamp)2Me was used as the metal precursor, with Ar as a purging gas and H2O as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of Ta2O5 growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the Ta5+ state, which corresponds with the stoichiometric Ta2O5, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between Ta2O5 and Si. The measured valence band offset value between Ta2O5 and the Si substrate was 3.08 eV after 2.5 cycles.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.382-382
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• 2009

염료감응형 태양전지의 구성체 중 전극으로 연구 되어 지고 있는 $TiO_2$는 기존에 대량 생산이 가능한 spin coating법, screen printing법, spray법의 연구가 이루어져 왔으나 고 효율 태양전지에 쓰이는 전극 시스템에 비해 고 분산성을 지닌 $TiO_2$페이스트를 제조 하는데 어려움이 있다. 그리고 플렉시블 디스플레이 소자의 응용을 위해서는 소자 공정 온도인 $250^{\circ}C$ 이하의 공정 온도가 요구 되어 지므로 고온공정인 CVD법은 이에 적합하지 않다. 이에 본 연구는 진공 증착 방법인 광원자층증착법을 이용하여 $150^{\circ}C$이하의 저온공정온도에서도 적용이 가능한 $TiO_2$ 박막을 185nm의 UV light를 조사하여 glass 기판위에 제조 하고 그에 따른 박막의 물성 분석을 하였다. Mo source로는 titanium tetraisopropoxide(TTIP)와 reactant gas 로는 $H_2O$를 사용하였으며 불활성 기체인 Ar 가스는 purge 가스로 각각 사용하였다. $100^{\circ}C{\sim}250^{\circ}C$ 공정온도를 변수로 $TiO_2$ 박막을 제조 하였으며 제조된 $TiO_2$ 박막의 물성 분석을 위해 FESEM, TEM을 이용하여 표면 및 두께를 분석하였다. 또한 $100^{\circ}C$ 400 cycles에서 약 12nm 막 두께를 관찰 할 수 있었으며 그 결과 박막의 성장률이 $0.3{\AA}$/cycle 임을 확인 할 수 있었다. 그리고 UV-VIS을 이용하여 박막의 좌외선에 대한 흡수도 및 투과도 분석을 하였다. 또한 XPS 성분 분석을 통하여 $100^{\circ}C$의 저온 공정에서 형성된 박막이 $TiO_2$임을 확인 하였다. 이러한 결과에서 185nm의 UV light에 의한 광원자층 증착법으로 $100^{\circ}C$의 저온에서도 $TiO_2$ 박막이 증착 되는 것을 확인 할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.54-54
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• 2008

$Eu^{2+}$, $Nd^{3+}$ co-doped $BaAl_2O_4$ are known as a long afterglow phosphor. We found that $Eu^{2+}$-doped $BaAl_2O_4$ showed ptotoconductivity in the range of UV and visual light. In this study, $BaAl_2O_4$:Eu thin film has been prepared by RF sputtering method and a sensing characteristics to UV and visual light was performed. Only $Eu^{2+}$ and $Nd^{3+}$ co-doped $BaAl_2O_4$ powders and targets for deposition were prepared by a convention solid state method, and the deposition was performed in a reducing $H_2$-Ar mixture gas on Si substrates. The observation of crystalline phase and morphology of the sputtered film were performed using XRD, EDX. The photoluminescence and photocurrent to UV and visual light were measured simultaneously using 300W-Xe solar simulator as a light source. It was confirmed that the photocurrent induced by irradiation of light showed a linear relationship to the light intensity.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Progress in Superconductivity
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• v.8 no.1
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• pp.59-64
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• 2006

High $J_c\;YBa_2Cu_3O_x$ superconducting films were fabricated by MOD method using fluorine-free dichloroacetic acid(DCA) as chelating solvent for preparing precursor solution. Coating solutions were prepared by dissolving Y-, Ba- and Cu-acetates in DCA solvent followed by drying in rota vapor to obtain the blue gel that is diluted in methanol and 2-methoxyethanol for adjusting the cation concentration. DCA-MOD precursor solution was coated on a single crystal(001) $LaAlO_3(LAO)$ substrate by a dip coating method with a speed of 25 mm/min. Coated films were calcined at lower temperature up to $500^{\circ}C$ in flowing oxygen atmosphere with a 7.2% humidity. Conversion heat treatment was performed at various temperatures of $780{\sim}810^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. SEM observations showed that films have very dense microstructures for the films prepared at the temperature higher than $800^{\circ}C$ regardless of diluting solvent; methanol or 2-methoxyethanol. X-ray diffraction analysis showed that YBCO grains grew with a (001) preferred orientation. A High critical current density($J_c$) of 1.28 $MA/cm^2$(@77 K and self-field) was obtained id. the YBCO film prepared using 2-methoxyethanol as a solvent.

• Journal of Powder Materials
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• v.6 no.4
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• pp.314-319
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• 1999

The solid state reaction by mechanical alloying(MA) generally proceeds by lowering the free energy as the result of a chemical reaction at the interface between the two adjacent layers. However, Lee et $al.^{1-5)}$ reported that a mixture of Cu and Ta, the combination of which is characterized by a positive heat of mixing of +2kJ/mol, could be amorphized by mechanical alloying. This implies that there exists an up-hill process to raise the free energy of a mixture of pure Cu and la to that of an amorphous phase. It is our aim to investigate to what extent the MA is capable of producing a non-equilibrium phase with increasing the heat of mixing. The system chosen was the ternary $Cu_{30}Ta_{ 70-x}Mo_ x$ (x=35, 10). The mechanical alloying was carried out using a Fritsch P-5 planetary mill under Ar gas atmosphere. The MA powders were characterized by the X-ray diffraction with Cu-K $\alpha$ radiation, thermal analysis, electron diffraction and TEM micrographs. In the case of x=35, where pure Cu powders were mixed with equal amount of pure Ta and Mo powders, we revealed the formation of bcc solid solution after 150 h milling but its gradual decomposition by releasing fcc-Cu when milling time exceeded 200 h. However, an amorphous phase was clearly formed when the Mo content was lowered to x=10. It is believed that the amorphization of ternary $Cu_{30}Ta_{60}Mo_{10}$ powders is essentially identical to the solid state amorphization process in binary $Cu_{30}Ta_{70}$ powders.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.6
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• pp.590-598
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• 2005

An adequate method to identify chromium separation, Cr(III) and Cr(VI), in water samples were studied by using High Performance Liquid Chromatography(HPLC) coupled with Inductively Coupled Plasma Mass Spectometer(ICP-MS) equipped with Dynamic Reaction Cell(DRC). The characteristic distribution of Cr(III) and Cr(VI) in the raw water taken at the six water intake stations in Seoul, was analyzed by the method developed by the authors. The chromium species separated by HPLC was isocratically conducted by using tetrabutylammonium phosphate monobasic(1.0 mM TBAP), ethylenediaminetetraacetic acid(0.6 mM EDTA) and 2% v/v methanol as the mobile phase. 5% v/v methanol was used as flushing solvent. A reactive ammonia($NH_3$) gas was used to eliminate the potential interference of $ArC^+$. Several Parameters such as solvent ratio, pH, flow rate and sample injection volume were optimized for the successful separation and reproducibility. Although it has been reported thai the separation sensitivity of Cr(III) is superior to that of Cr(VI), the authors observed Cr(VI) was more sensitive than Cr(III) when ammonia($NH_3$) gas was used as the reaction gas. It took less than 3 minutes to analyze chromium species with this method and the estimated detection limits were $0.061\;{\mu}g/L$ for Cr(III) and $0.052\;{\mu}g/L$, for Cr(VI). According to the results from the analysis on chromium species in the raw water of the six intake stations, the concentrations of Cr(III) ranged from 0.048 to $0.064\;{\mu}g/L$(ave. $0.054\;{\mu}g/L$) while that of Cr(VI) ranged from 0.014 to $0.023\;{\mu}g/L$(ave. $0.019\;{\mu}g/L$). Recovery ratio was very high($90.1{\sim}94.1%$). There were two or three times more Cr(III) than Cr(VI) in the raw water.