Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Light Sensing Characteristics of $BaAl_2O_4$ thin film by RF magnetron sputtering

RF 마그네트론 스퍼터링에 의한 $BaAl_2O_4$:Eu 박막의 광센싱 특성

  • Kim, Sei-Ki (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Kang, Jung-Woo (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Kwak, Chang-Gon (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Ji, Mi-Jung (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Choi, Byung-Hyun (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Kim, Young-Woo (Shinhan Ceramics Co., Ltd.)
  • Published : 2008.06.19
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Abstract

$Eu^{2+}$, $Nd^{3+}$ co-doped $BaAl_2O_4$ are known as a long afterglow phosphor. We found that $Eu^{2+}$-doped $BaAl_2O_4$ showed ptotoconductivity in the range of UV and visual light. In this study, $BaAl_2O_4$:Eu thin film has been prepared by RF sputtering method and a sensing characteristics to UV and visual light was performed. Only $Eu^{2+}$ and $Nd^{3+}$ co-doped $BaAl_2O_4$ powders and targets for deposition were prepared by a convention solid state method, and the deposition was performed in a reducing $H_2$-Ar mixture gas on Si substrates. The observation of crystalline phase and morphology of the sputtered film were performed using XRD, EDX. The photoluminescence and photocurrent to UV and visual light were measured simultaneously using 300W-Xe solar simulator as a light source. It was confirmed that the photocurrent induced by irradiation of light showed a linear relationship to the light intensity.

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