• 한국표면공학회지
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• 제34권2호
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• pp.97-104
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• 2001

($Ti_{ 1-x}$$Al_{ x}$)N has been deposited on high speed steel (HSS) substrate using PECVD from the gas mixture of $TiC1_4$, $AlC1_4$, $NH_3$, $H_2$, and Ar. The correlation between the microstructure and the mechanical properties was investigated. ($Ti_{1-x}$$Al_{ x}$)N showed single phase NaCl-structure up to X=0.87, while a mixed phase of NaCl Type (Ti, Al) N and wurtzite structure AlN was observed for 0.87$Ti_{1-x}$ $Al_{x}$ )N became by degrees as increasing X, which made the hardness of the coating higher by Al addition. When the coating was composed of a mixed phase, however, the hardness decreased abruptly due to the effect of soft AlN phase. The wear volume of the coatings could be obtained as the concentration of the coating was varied, and the relation between the wear volume and hardness or the adhesion strength was discussed.

• 한국산학기술학회논문지
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• 제20권1호
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• pp.278-283
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• 2019

미립의 3종류 Fe-2%Ni합금 분말(N사), Fe+2%Ni혼합 분말(B사 및 S사)을 항절력 시험편 및 링(ring)형상의 시험편으로 사출 성형, 탈지, 소결 조건(환원 및 소결 분위기, 소결 온도, 소결시간, 냉각속도)을 변화시켜 소결체를 제작하였다. 얻어진 소결체에 대하여는 소결체의 밀도 및 자기적 특성을 평가하여 다음과 같은 결론을 얻었다. (1) 탈지한 각 성형체를 수소 중에서 $1123K{\times}3.6ks$유지하고, Ar중에서 $1623K{\times}14.4ks$로 소결할 경우 N(사), B(사), S(사)소결체의 밀도는 각각 96, 99, 99%로 나타났고, 소결체의 산소 탄소량은 각각 0.0041%O, 0.0006%C, 0.0027%O, 0.0022%C, 0.160%O, 0.0026%C의 값을 나타내었다. (2) 위에의 결과로부터 보면 B(사)의 소결체가 가장 우수한 결과를 나타내므로 B(사)의 Ar중 소결체에 대하여 자기적 특성을 조사한 결과, $B_{25}=14.3KG$, $B_r=7.75KG$, $H_c=2.1Oe$로 용해해서 만든 제품의 값에는 미치지 못했다. (3) B(사)의 성형체를 Ar가스 중에서 $1673K{\times}14.4ks$로 소결 후 1123K까지는 $0.83Ks^{-1}$로 냉각하고 1123K부터 실온까지는 $0.083Ks^{-1}$로 냉각한 소결체의 자기적 특성은 $B_{25}=14.8KG$, $B_r=8.3KG$, $H_c=1.3Oe$로 용해해서 만든 제품의 값과 거의 동일한 값을 얻었다. 이상, 소결 조건 제어(환원조건, 소결분위기, 소결온도, 소결시간) 및 냉각속도 제어를 통한 소결 공정으로 목적하는 연자성 재료특성을 얻었다.

• 멤브레인
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• 제34권2호
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• pp.146-153
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• 2024

본 실험에서는 Ti를 기반으로 한 평판 수소 분리막을 설계하여 제조하였다. 새로운 조성의 Ti를 베이스로 한 수소 분리막을 찾기 위하여 여러 합금들의 물리화학적 특성과 수소투과도 사이의 상관관계에 대해 조사하였다. 이를 바탕으로 신조성의 합금막 2종(Ti_14.2Zr_66.4Ni_12.6Cu_6.8 (70 ㎛), Ti_17.3Zr_62.7Ni₂₀ (80 ㎛))을 설계 및 제조하였다. 제조된 평판 수소 분리막은 300~500℃, 1~4 bar의 조건에서 혼합 가스(H₂, N₂), sweep 가스(Ar)를 이용하여 수소 투과 실험을 진행하였다. Ti_14.2Zr_66.4Ni_12.6Cu_6.8 합금막은 500℃, 4bar에서 최대 16.35 mL/cm² min의 flux를 가지며, Ti_17.3Zr_62.7Ni₂₀ 합금막은 450℃, 4 bar에서 최대 10.28 mL/cm² min의 flux를 가진다.

• 대한전자공학회논문지
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• 제26권6호
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• pp.48-56
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• 1989

밀착형 1차원 영상감지소자로서 팩시밀리에 사용될 광도전막을 사일랜듸 글로방전 분해법으로 제작하였다. 우선 rf전력, 사일랜유량, 분위기 가스압, $H_2/SiH_4$비 및 기판온도의 증착조건에 따른 단층광전도막의 전기적 및 광학적특성을 조사하였다. 이 단층구조 영상감지막은 광전감도 0.85와 100lux 조도하에서 $I_{ph}/I_d=100$을 나타내었다. 그러나 이러한 단층박막은 양 전극으로 부터의 캐리어주입으로 인해 큰 암전류도 0.2nA 이하를 나타내었다. 또한 다층막은 단층막에 비해 단파장 가시광영역이 보상되어 팩시밀리용 1차원 영상감지소자에 사용될 만한 결과를 나타내었다.

• 소성∙가공
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• 제31권4호
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• pp.240-245
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• 2022

In this study, to achieve good electrical conductivity of a charging terminal component in electric vehicles, we investigated the microstructure evolution of pure-Cu subjected to metal injection molding by controlling the sintering variables, such as temperature and time. Thus, three samples were sintered at temperatures ranging from 1000 ℃ to 1050 ℃ near to the melting temperature of 1085 ℃ for 1 and 10 h after thermal evaporation of binder at 730 ℃. Both procedures were made using a unified furnace under Ar+H₂ gas with high purity. The structural observation displayed that the grain size as well as the compactness (a reciprocal of porosity) increased simultaneously as temperature and time increased. This gave rise to high thermal conductivity of 90% IACS together with high density, which was mainly attributed to decrease in fractions of grain boundaries and micro-pores working as effective scattering center for electron movement.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.644-644
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• 2013

Graphene is a two-dimensional sp2 layer material. Despite the short history in the empirical synthesis of the graphene layers, the academic/industrial unique features have brought highly significant interest in research and development related to graphene-related materials. In particular, the electrical and optical performances have been targeted towards pre-existing microelectronicand emerging nanoelectronic applications. The graphene synthesis relies on a variety of processing factors, such as temperature, pressure, and gas ratios involving H2, CH4, and Ar, in addition to the inherent selection of copper substrates. The current work places its emphasis on the role of experimental factors in growing graphene thin films. The thermally-grown graphene layers are characterized using physical/chemical analyses, i.e., four point resistance measurements, Raman spectroscopy, and UV-Visible spectrophotometry. Ultimately, an optimization strategy is proposed in growing high-quality graphene layers well-controlled through empirical factors.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.179-182
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• 2007

Polycrystaline (poly) 3C-SiC thin film on n-type and p-type Si were deposited by APCVD using HMDS, $H_2$, and Ar gas at $1180^{\circ}C$ for 3 hour. And then the schottky diode with Au/poly 3C-Sic/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) value were measured as 0.84 V, over 140 V, 61nm, and $2.7{\times}10^{19}\;cm^3$, respectively. The p-n junction diode fabricated by poly 3C-SiC was obtained like characteristics of single 3C-SiC p-n junction diode. Therefore, its poly 3C-SiC thin films are suitable MEMS applications in conjuction with Si fabrication technology.

• Progress in Superconductivity
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• 제7권2호
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• pp.130-134
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• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

• 한국재료학회지
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• 제20권12호
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• pp.661-668
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• 2010

Cu(In,Ga)$Se_2$(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM $CuCl_2$, 8 mM $InCl_3$, 20 mM $GaCl_3$ and 8mM $H_2SeO_3$ at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of $Cu_{1.05}In_{0.8}Ga_{0.13}Se_2$ was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-$500^{\circ}C$ under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at $200^{\circ}C$, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of $500^{\circ}C$ for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the $MoSe_2$ phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.