• 접착 및 계면
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• 제4권1호
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• pp.28-34
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• 2003

강철 타이어 코드의 접착력 향상을 위하여 아세틸렌 플라즈마 중합 코팅, 아르곤 에칭+아세틸렌 플라즈마 중합 코팅, 그리고 아르곤 에칭+담채를 이용한 아세틸렌 플라즈마 중합 코팅을 실시하였으며, 접착력은 TCAT시편으로 측정하였다. 플라즈마 중합 코팅된 타이어 코드의 내구성을 고찰하기 위하여 제 1 단계로 아세틸렌 플라즈마 중합 코팅된 타이어코드를 상온에서 1, 3, 5, 10, 15일 동안 방치한 후 TCAT 시편을 제조하여 접착력변화를 측정하였으며, 제 2 단계로는 플라즈마 중합 코팅된 코드로 TCAT 시편을 제조한 후 증류수, 10% NaCl 수용액에서 또는 $100^{\circ}C$ 오븐에서 1, 2, 3, 4주간 노화시키면서 접착력 변화를 측정하였다. SEM/EDX을 이용하여 코드의 파괴표면을 분석하였으며, 황동코팅과 비교 분석하였다. 아르곤 에칭+담채를 이용한 아세틸렌 플라즈마 중합으로 코팅된 강철 타이어 코드의 접착력은 황동코팅된 시편의 접착력과 거의 같은 수준이었다. 타이어 코드의 상온 노화시험에서 황동코팅된 시편이 아세틸렌 플라즈마 중합 코팅된 시편에 비하여 우수 내구성을 보여주었으나, TCAT 시편의 노화에서는 아세틸렌 플라즈마 중합 코팅이 황동코팅에 비하여 우수하거나 비슷한 결과를 보였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.155-157
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• 1991

This paper describe a Laser CVD technology which realizes planarized interlevel dielectrics in sub-micron VLSI's. This technology comprises sub-micron gap filling with $SiO_2$ films between metal lines. Laser CVD process conditions have been investigated to improve step coverage of interlevel dielectrics. An ArF(193nm) Excimer Laser was used to excite and dissociate gas phase $SiH_4\;and\;N_2O$ molecules. The Laser CVD by $N_2O\;and \;SiH_4$. mixture gases has realized conformal deposition above the temperature of $300^{\circ}C$, as a result sub-micron gaps were buried with $SiO_2$ films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.700-702
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• 2004

The dependence of environmental gases such as Ar, $O_2$ on the emission current from carbon nanotube emitters was examined in this study. Based on our experiments, the current density is decreased in single-wall carbon nanotubes (SWNTs), but is increased in multi-wall carbon nanotubes (MWNTs) as the vacuum level decreases from $10^{-7}$ Torr to $10^{-4}$ Torr by the inflow purging gases. The current density subsequently recovered as the vacuum level increased to $10^{-7}$ Torr when gas inflow stopped. From those results, we conclude that the MWNTs have completely different degradation characteristics in comparison to SWNTs excluding the effect of binder materials.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2004년도 Proceedings of the 4th Korea-China Joint Workshop on Nuclear Waste Management
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• pp.238-244
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• 2004

The relationship between the leaching and gap inventory of spent fuel has been studied. When a specimen of J44H08 spent PWR fuel with 38 GWD/MTU has been leached in the synthetic granitic groundwater in Ar atmosphere, the released fraction of cesium was increased rapidly up to 0.7% at around 500 days and stayed below 0.8% until 3 years. This 0.7% of cesium might be released from the gap in this fuel. The measurement of gap inventory with C15I08 spent PWR fuel, having 35 GWD/MTU and 0.22% of fission gas release, was also determined near 0.6% for the cesium, which is a similar fraction of cesium released from the leaching experiment with J44H08 fuel. Its gap inventories of strontium and iodine were about 0.03 and less than 0.2% respectively. Respective fractions of cesium and strontium in grain boundary of C15I08 were 0.78, 0.09%.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2003년도 춘계학술발표대회 논문집
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• pp.173-175
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• 2003

At the low temperature of $950^{\circ}C$ the $\mu\textrm{m}$-sized whisker growth during the catalytic CVD of pyrolytic carbon from methane with $H_2$- and Ar-gas on quartz substrate with NiO powder was found in this work. In the preliminary study it was observed from pure methane pyrolysis without catalyst at the high temperature $1500~1700^{\circ}C$. If the growth whisker should be stopped at initial stage, about 20 min. of the methane pyrolysis, it would be nanosized whisker growth. The screw growth mechanism and unique mechanical properties of whisker for composites were also recognized. If the pyrolysis would be continued, we could found also spiral growth of whistlers with diameter of about 1, 5 mm. The large length of whisker was about 10 cm in 20 minute.

• 한국재료학회지
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• 제8권9호
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• pp.783-790
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• 1998

용융점 및 물리.화학적 특성이 $\textrm{UO}_{2}$와 비슷한 yttria-stabilized-zirconia ($\textrm{ZrO}_{2}$-$\textrm{Y}_{2}\textrm{O}_{3}$)분말을 유도플라즈마(induction plasma)로 용융 침적시켜 원자력발전용 핵연료펠렛 제조공정에 응용하고자 하였다. 분말의 용융정도는 플라즈마동력 및 분말의 크기에 영향을 받는 것으로 나타났으며, 쉬스가스 조성, 분말분사관 위치, 입자크기 및 분사거리 등을 최적화 하여 Ar/$\textrm{H}_{2}$유량120/20$\ell$/min, 플리즈마 동력 80KW, 분사관의위치 8cm , 챔버압력 200Torr, 분사거리 18cm에서 이론밀도의 97.91%, 침적속도 20mm/min의 최적조건을 도출하였다. 침적시험에서 도출된 최적조건으로 펠렛몰더에서 제조한 펠렛은 96.5%의 밀도를 나타내었으며, 균일도 및 외곤도 우수하여 신기술에 의한 핵연료의 제조가능성을 확인하였다. 고밀도 침적에 영향을 미치는 각 변수들의 영향과 이들 변수들의 상호영향은 ANOVA(Analysis of Variance)을 이용하여 분석하였다.

• 한국표면공학회지
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• 제39권2호
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• pp.70-75
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• 2006

As technology advances, there is a demand for development of hard, solid lubricant coating. (Ti,Cr)N-$MoS_2$, films were deposited on SKD 11 tool steel substrate by co-deposition of $MoS_2$, with (Ti,Cr)N using a D.C. magnetron sputtering process. The influence of the $N_2/Ar$ gas ratio, the deposition temperature, the amount of $MoS_2$ in the films, and the bias voltage on the mechanical and the structural properties of the films were investigated. Wear tests were performed on the films deposited in various conditions.

• Progress in Superconductivity
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• 제12권1호
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• pp.1-5
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• 2010

In this work we synthesized both MgB2 and Carbon doped MgB2 superconductor with Ag addition via high energy milling and substituent heat treatment. Heat treatments were performed at $900\;^{\circ}C$ for 30 min in flowing Ar gas. We varied amount of Ag powder. In a range of Ag powder was 0~5wt%. The effect of Ag was correlated with superconducting properties. The results show a slight decrease in critical temperature ($T_c$) and a reduction of critical current density ($J_c$) at high fields for the Ag-doped samples as compared to the un-doped samples. Reduction of $J_c$ may be due to the formation of MgAg compound.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 춘계학술발표회 초록집
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• pp.72-72
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• 2001

Plasma polymerized thin films have been deposited on Si(lOO) substrates at $25-400^{\circ}C$ using thiophene ($C_4H_4S$) precursor by plasma assisted chemical vapor deposition (PACVD) method for low-dielectric device application. In order to compare physical properties of the as-grown thin films, the effects of the plasma power, gas flow ratio and deposition temperature on the dielectric constant and thermal stability were mainly studied. XRD and TED studies revealed that the as-grown thin films have highly oriented amorphous polymer structure. XPS data showed that the polymerized thin films that grown under different RF power and deposition temperature as well as different gas ratio of $Ar:H_2$ have different stoichiometric ratio of C and S compared with that of monomer, indicating a formation of mixture polymers. Moreover, we also realized that oxygen free and thermally stable polymer thin films could be grown at even $400^{\circ}C$. The results of SEM, AFM and TEM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current were obtained to be about 3.22 and $10-11{\;}A/\textrm{cm}^2$, respectively.

• 한국재료학회지
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• 제8권2호
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• pp.131-134
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• 1998

$SiO_{2}$ 기판과 dimethylethylamine alane(DMEAA)을 반응소스로 하여 알루미늄을 증착시켜 증착전 전처리 가스 종류와 수소 플라즈마 처리에 따른 증착속도의 차이와 미세구조에 대하여 연구하였다. TiN기판에 증착된 알루미늄의 증착속도는 증착전 수소 가스에 의한 전처리한 경우 아르곤이나 헬륨에 의한 전처리에 비해 빠른 증착속도를 나타내었다. 이르곤 플라즈마 전처리나 플라즈마 전처리 하지 않고 $SiO_{2}$기판에 알루미늄을 증착하였을 경우에 비해 수소 플라즈마 전처리에 의해 알루미튬증착시 잠복기(incubation time)가 감소하였으며 치밀한 미세조직을 얻을 수 있었다.