• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.121-121
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• 2011

Graphene formed by chemical vapor deposition was exposed to the various plasmas of Ar, O2, N2, and H2 to examine its effects on the bonding properties of graphene to metal. Upon the Ar plasma exposure of patterned graphene, the subsequently deposited metal electrodes remained intact, enabling successful fabrication of field effect transistor (FET) arrays. The effects of enhancing adhesion between graphene and metals were more evident from O2 plasmas than Ar, N2, and H2 plasmas, suggesting that chemical reaction of O radicals induces hydrophilic property of graphene more effectively than chemical reaction of H and N radicals and physical bombardment of Ar ions. From the electrical measurements (drain current vs. gate voltage) of field effect transistors before and after Ar plasma exposure, it was confirmed that the plasma treatment is very effective in controlling bonding properties of graphene to metals accurately without requiring buffer layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.128-128
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• 2006

• Macromolecular Research
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• v.13 no.1
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• pp.2-7
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• 2005

A series of ethylene polymerization catalysts based on tridentate bis-imine ligands coordinated to iron and cobalt was reported. The ligands were prepared through the condensation of sterically bulky anilines with allyloxy-and benzyloxy-substituted 2,6-acetylpyridines. The pre-catalyst complexes were penta-coordinate species of the general formula $\{[(ArN=C(Me))_2(4-RO-C_5H_3N)]MCl_2\}$ (Ar=ortho dialkyl-substituted aryl ring; R=allyl, benzyl; M=Fe, Co). In the presence of ethylene and methyl alumoxane cocatalysts, these complexes were active for the polymerization of ethylene, with activities lower than those of metal complexes of the general formula $\{[(2-ArN=C(Me)_2C_5H_3N]MCl_2\}$ (Ar=ortho dialkyl-substituted aryl ring; M=Co, Fe), containing no substituents in 2,6-acetylpyridine ring. The effects of the catalyst structure and temperature on the polymerization activity, thermal properties, and molecular weight were discussed.

• Fire Science and Engineering
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• v.18 no.2
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• pp.12-19
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• 2004

The commercially available IG-541 extinguished agent composed of inert gases was developed for environmental protection. The extinguished agents were considered in terms of physical properties, efficient characteristic, environment, stability, and economical efficiency. The pure and mixture components of physical properties of $N_2$, Ar and $CO_2$ were chosen and compared. The physical properties of density, viscosity and surface tension of inert gases were plotted with the molar ratios of $N_2$/$CO_2$ and Ar/$CO_2$ in terms of a temperature. The extinguished agent in the composition of $N_2$, Ar and $CO_2$, 50/40/10 (mol %) showed relatively high density, low viscosity and moderate surface tension, therefore it was suitable for the alternative extinguished agents.

• Journal of the korean academy of Pediatric Dentistry
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• v.34 no.4
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• pp.551-559
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• 2007

This study was to investigate if cervical vertebrae maturation stages are as useful as hand-wrist maturation stages in evaluating the mandibular growth. The subject consisted of 292 girls aged from 8 to 16 years with normal occlusion. They were classified according to diagnosis by using studycast, lateral cephalogram, and handwrist X-ray film. The results were as follow: 1. Cervical vertebrae and hand-wrist maturation stages increased with age. 2. All mandibular measurements (Ar-Go, Go-Me, N-Go, S-Gn, N-Me) increased linearly with cervical vertebrae maturation stages. 3. Ar-Go, Go-Me, N-Go, S-Gn increased linearly with hand-wrist maturation stages. 4. Ar-Go, Go-Me, N-Go, S-Gn increased relatively rapidly between cervical vertebrae maturation stages 3 and 4. Go-Me and S-Gn increased relatively rapidly between hand-wrist maturation stages 6 and 7. 5. Ar-Go, Go-Me, N-Go, S-Gn, N-Me had high correlations with cervical vertebrae maturation stages as well as hand-wrist maturation stages. These results suggest that cervical vertebrae maturation stages are reliable on evaluating the mandibular growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.75-78
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• 1996

The deposition condition Gf TiN films as electrode was studied by sheet resistance, TiN depositon Thickness X-ray diffraction. TiN was made by reactively DC magnetron sputtering with varying $N_2$/Ar mixture gas and substrate temperature. After finding The deposition condition of TiN films, The samples with the structure of Cu/Ta$_2$O$_{5}$, TiN/Ta$_2$O$_{5}$Si, Cu/TiN/Ta$_2$O$_{5}$ Si were prepared and were measured I-V, C-V. As a results, it was found that when TiN was deposited in an $N_2$a results, it was found that when TiN was deposited in an $N_2$atmosphere its Sheet resistance is lower n than n V$_2$Ar mixtureixture

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.202-202
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• 2012

염료감응태양전지(DSSC)의 광변환 효율을 향상시키기 위하여 진공챔버에서 450도 고온에서 O2, Ar, and N2 혼합가스를 주입하여 다양한 plasma로 TiO2 박막을 처리하면서 소성시켰다. TiO2 표면을 cleaning하고 활성화함으로서 염료의 결합력을 향상시키는 것 외에 TiO2 내부의 oxygen vacancy를 변화를 관찰하였다. 실험에 사용한 박막은 glass 위에 FTO 박막을 입히고, 다공성 TiO2 나노입자 박막을 코팅하여 제조하였다(porous TiO2 나노입자(${\sim}12{\mu}m$)/FTO(Fluorine doped Tin oxide; $1{\mu}m$)/glass). 완성된 광전극에 대해서 XRD, XPS, EIS, FE-SEM 등을 이용하여 분석하였다. 또한 이렇게 전처리된 광전극을 사용한 DSSC를 제작하였다. 그리고 Solar-simulator를 통해 그 효율을 측정하여 '플라즈마환경에서 소성된 광전극에 대한 DSSC의 광변환효율에 미치는 효과'을 고찰하였다.

• Corrosion Science and Technology
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• v.13 no.2
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• pp.70-80
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• 2014

Duplex stainless steels with nearly equal fraction of the ferrite(${\alpha}$) phase and austenite(${\gamma}$) phase have been increasingly used for various applications such as power plants, desalination facilities due to their high resistance to corrosion, good weldability, and excellent mechanical properties. Hyper duplex stainless steel (HDSS) is defined as the future duplex stainless steel with a pitting resistance equivalent (PRE=wt.%Cr+3.3(wt.%Mo+0.5wt.%W)+30wt.%N) of above 50. However, when HDSS is welded with gas tungsten arc (GTA), incorporation of nitrogen in the Ar shielding gas are very important because the volume fraction of ${\alpha}$-phase and ${\gamma}$-phase is changed and harmful secondary phases can be formed in the welded zone. In other words, the balance of corrosion resistance between two phases and reduction of $Cr_2N$ are the key points of this study. The primary results of this study are as follows. The addition of $N_2$ to the Ar shielding gas provides phase balance under weld-cooling conditions and increases the transformation temperature of the ${\alpha}$-phase to ${\gamma}$-phase, increasing the fraction of ${\gamma}$-phase as well as decreasing the precipitation of $Cr_2N$. In the anodic polarization test, the addition of nitrogen gas in the Ar shielding gas improved values of the electrochemical parameters, compared to the Pure Ar. Also, in the erosion-corrosion test, the HDSS welded with shielding gas containing $N_2$ decreased the weight loss, compared to HDSS welded with the Ar pure gas. This result showed the resistance of erosion-corrosion was increased due to increasing the fraction of ${\gamma}$-phase and the stability of passive film according to the addition $N_2$ gas to the Ar shielding gas. As a result, the addition of nitrogen gas to the shielding gas improved the resistance of erosion-corrosion.

• Journal of Surface Science and Engineering
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• v.42 no.6
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• pp.251-255
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• 2009

In this study, the plasma etching of the TaN thin film with $O_2/BCl_3$/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to $SiO_2$ and PR was studied as a function of the process parameters, including the amount of $O_2$ added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was $O_2$(3 sccm)/$BCl_3$(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.