• Title/Summary/Keyword: Approximation analog-to-digital converter

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A 0.4-2GHz, Seamless Frequency Tracking controlled Dual-loop digital PLL (0.4-2GHz, Seamless 주파수 트래킹 제어 이중 루프 디지털 PLL)

  • Son, Young-Sang;Lim, Ji-Hoon;Ha, Jong-Chan;Wee, Jae-Kyung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.12
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    • pp.65-72
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    • 2008
  • This paper proposes a new dual-loop digital PLL(DPLL) using seamless frequency tracking methods. The dual-loop construction, which is composed of the coarse and fine loop for fast locking time and a switching noise suppression, is used successive approximation register technique and TDC. The proposed DPLL in order to compensate the quality of jitter which follows long-term of input frequency is newly added cord conversion frequency tracking method. Also, this DPLL has VCO circuitry consisting of digitally controlled V-I converter and current-control oscillator (CCO) for robust jitter characteristics and wide lock range. The chip is fabricated with Dongbu HiTek $0.18-{\mu}m$ CMOS technology. Its operation range has the wide operation range of 0.4-2GHz and the area of $0.18mm^2$. It shows the peak-to-peak period jitter of 2 psec under no power noise and the power dissipation of 18mW at 2GHz through HSPICE simulation.

Design of a 12-bit, 10-Msps SAR A/D Converter with different sampling time applied to the bit-switches within C-DAC (C-DAC 비트 스위치에 다른 샘플링 시간을 인가하는 12-bit, 10-Msps SAR A/D 변환기 설계)

  • Shim, Minsoo;Yoon, Kwangsub;Lee, Jonghwan
    • Journal of IKEEE
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    • v.24 no.4
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    • pp.1058-1063
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    • 2020
  • This paper proposes a 12-bit SAR A/D(Successive Approximation Register Analog-to-Digital) converter that operates at low power for bio-signal and sensor signal processing. The conventional SAR A/D converter utilized the reduction of the dynamic current, which resulted in reducing total power consumption. In order to solve the limitation of the sampling time due to charging/discharging of the capacitor for reducing dynamic current, the different sampling time on the C-DAC bit switch operation was applied to reduce the dynamic current. In addition, lowering the supply voltage of the digital block to 0.6V led to 70% reduction of the total power consumption of the proposed ADC. The proposed SAR A/D was implemented with CMOS 65nm process 1-poly 6-metal, operates with a supply voltage of 1.2V. The simulation results demonstrate that ENOB, DNL/INL, power consumption and FoM are 10.4 bits, ±0.5LSB./±1.2LSB, 31.2uW and 2.8fJ/step, respectively.

Recent Advances in Radiation-Hardened Sensor Readout Integrated Circuits

  • Um, Minseong;Ro, Duckhoon;Kang, Myounggon;Chang, Ik Joon;Lee, Hyung-Min
    • Journal of Semiconductor Engineering
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    • v.1 no.3
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    • pp.81-87
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    • 2020
  • An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

A 12-bit 1MSps SAR ADC using MOS Capacitor (MOS 커패시터를 이용한 12비트 1MSps 연속 근사화 레지스터 아날로그-디지털 변환기)

  • Seong, Myeong-U;Kim, Cheol-Hwan;Choi, Seong-Kyu;Choi, Geun-Ho;Kim, Shin-Gon;Han, Gi-Jung;Rastegar, Habib;Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.10a
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    • pp.293-294
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    • 2014
  • 본 논문에서는 MOS 커패시터를 이용하여 12비트 1MSps 연속 근사화 레지스터 아날로그-디지털 변환기(Successive Approximation Register Analog-to-Digital Converter, SAR ADC)를 설계하였다. 설계된 아날로그-디지털 변환기는 매그나칩/SK하이닉스 $0.18{\mu}m$ 공정을 이용하였으며, Cadence Tool을 이용하여 시뮬레이션 및 레이아웃을 하였다. 시뮬레이션 결과 1.8V의 공급전압에서 전력 소모는 3.22mW였고, 유효 비트수는 11.5bit의 결과를 보였다.

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Low Power ADC Design for Mixed Signal Convolutional Neural Network Accelerator (혼성신호 컨볼루션 뉴럴 네트워크 가속기를 위한 저전력 ADC설계)

  • Lee, Jung Yeon;Asghar, Malik Summair;Arslan, Saad;Kim, HyungWon
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.25 no.11
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    • pp.1627-1634
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    • 2021
  • This paper introduces a low-power compact ADC circuit for analog Convolutional filter for low-power neural network accelerator SOC. While convolutional neural network accelerators can speed up the learning and inference process, they have drawback of consuming excessive power and occupying large chip area due to large number of multiply-and-accumulate operators when implemented in complex digital circuits. To overcome these drawbacks, we implemented an analog convolutional filter that consists of an analog multiply-and-accumulate arithmetic circuit along with an ADC. This paper is focused on the design optimization of a low-power 8bit SAR ADC for the analog convolutional filter accelerator We demonstrate how to minimize the capacitor-array DAC, an important component of SAR ADC, which is three times smaller than the conventional circuit. The proposed ADC has been fabricated in CMOS 65nm process. It achieves an overall size of 1355.7㎛2, power consumption of 2.6㎼ at a frequency of 100MHz, SNDR of 44.19 dB, and ENOB of 7.04bit.

A 10-bit 20-MS/s Asynchronous SAR ADC using Self-calibrating CDAC (자체 보정 CDAC를 이용한 10비트 20MS/s 비동기 축차근사형 ADC)

  • Youn, Eun-ji;Jang, Young-Chan
    • Journal of IKEEE
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    • v.23 no.1
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    • pp.35-43
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    • 2019
  • A capacitor self-calibration is proposed to improve the linearity of the capacitor digital-to-analog converter (CDAC) for an asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with 10-bit resolution. The proposed capacitor self-calibration is performed so that the value of each capacitor of the upper 5 bits of the 10-bit CDAC is equal to the sum of the values of the lower capacitors. According to the behavioral simulation results, the proposed capacitor self-calibration improves the performances of differential nonlinearity (DNL) and integral nonlinearity (INL) from -0.810/+0.194 LSBs and -0.832/+0.832 LSBs to -0.235/+0.178 LSBs and -0.227/+0.227 LSBs, respectively, when the maximum capacitor mismatch of the CDAC is 4%. The proposed 10-bit 20-MS/s asynchronous SAR ADC is implemented using a 110-nm CMOS process with supply of 1.2 V. The area and power consumption of the proposed asynchronous SAR ADC are $0.205mm^2$ and 1.25 mW, respectively. The proposed asynchronous SAR ADC with the capacitor calibration has a effective number of bits (ENOBs) of 9.194 bits at a sampling rate of 20 MS/s about a $2.4-V_{PP}$ differential analog input with a frequency of 96.13 kHz.

Design of a Low-Power 8-bit 1-MS/s CMOS Asynchronous SAR ADC for Sensor Node Applications (센서 노드 응용을 위한 저전력 8비트 1MS/s CMOS 비동기 축차근사형 ADC 설계)

  • Jihun Son;Minseok Kim;Jimin Cheon
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.16 no.6
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    • pp.454-464
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    • 2023
  • This paper proposes a low-power 8-bit asynchronous SAR ADC with a sampling rate of 1 MS/s for sensor node applications. The ADC uses bootstrapped switches to improve linearity and applies a VCM-based CDAC switching technique to reduce the power consumption and area of the DAC. Conventional synchronous SAR ADCs that operate in synchronization with an external clock suffer from high power consumption due to the use of a clock faster than the sampling rate, which can be overcome by using an asynchronous SAR ADC structure that handles internal comparisons in an asynchronous manner. In addition, the SAR logic is designed using dynamic logic circuits to reduce the large digital power consumption that occurs in low resolution ADC designs. The proposed ADC was simulated in a 180-nm CMOS process, and at a 1.8 V supply voltage and a sampling rate of 1 MS/s, it consumed 46.06 𝜇W of power, achieved an SNDR of 49.76 dB and an ENOB of 7.9738 bits, and obtained a FoM of 183.2 fJ/conv-step. The simulated DNL and INL are +0.186/-0.157 LSB and +0.111/-0.169 LSB.

A 12 bit 750 kS/s 0.13 mW Dual-sampling SAR ADC

  • Abbasizadeh, Hamed;Lee, Dong-Soo;Yoo, Sang-Sun;Kim, Joon-Tae;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.760-770
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    • 2016
  • A 12-bit 750 kS/s Dual-Sampling Successive Approximation Register Analog-to-Digital Converter (SAR ADC) technique with reduced Capacitive DAC (CDAC) is presented in this paper. By adopting the Adaptive Power Control (APC) technique for the two-stage latched type comparator and using bootstrap switch, power consumption can be reduced and overall system efficiency can be optimized. Bootstrapped switches also are used to enhance the sampling linearity at a high input frequency. The proposed SAR ADC reduces the average switching energy compared with conventional SAR ADC by adopting reduced the Most Significant Bit (MSB) cycling step with Dual-Sampling of the analog signal. This technique holds the signal at both comparator input asymmetrically in sample mode. Therefore, the MSB can be calculated without consuming any switching energy. The prototype SAR ADC was implemented in $0.18-{\mu}m$ CMOS technology and occupies $0.728mm^2$. The measurement results show the proposed ADC achieves an Effective Number-of-Bits (ENOB) of 10.73 at a sampling frequency of 750 kS/s and clock frequency of 25 MHz. It consumes only 0.13 mW from a 5.0-V supply and achieves the INL and DNL of +2.78/-2.45 LSB and +0.36/-0.73 LSB respectively, SINAD of 66.35 dB, and a Figures-of-Merit (FoM) of a 102 fJ/conversion-step.

A 4-Channel Multi-Rate VCSEL Driver with Automatic Power, Magnitude Calibration using High-Speed Time-Interleaved Flash-SAR ADC in 0.13 ㎛ CMOS

  • Cho, Sunghun;Lee, DongSoo;Lee, Juri;Park, Hyung-Gu;Pu, YoungGun;Yoo, Sang-Sun;Hwang, Keum Cheol;Yang, Youngoo;Park, Cheon-Seok;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.3
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    • pp.274-286
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    • 2016
  • This paper presents a 4-channel multi-rate vertical-cavity surface-emitting laser (VCSEL) driver. In order to keep the output power constant with respect to the process, voltage, temperature (PVT) variations, this research proposes automatic power and magnitude. For the fast settling time, the high-speed 10-bit time-interleaved Flash-successive approximation analog to digital converter (Flash-SAR ADC) is proposed and shared for automatic power and magnitude calibration to reduce the die area and power consumption. This chip is fabricated using $0.13-{\mu}m$ CMOS technology and the die area is $4.2mm^2$. The power consumption is 117.84 mW per channel from a 3.3 V supply voltage at 10 Gbps. The measured resolution of bias /modulation current for APC/AMC is 0.015 mA.

The Low Area 12-bit SAR ADC (저면적 12비트 연속 근사형 레지스터 아날로그-디지털 변환기)

  • Sung, Myeong-U;Choi, Geun-Ho;Kim, Shin-Gon;Rastegar, Habib;Tall, Abu Abdoulaye;Kurbanov, Murod;Choi, Seung-Woo;Pushpalatha, Chandrasekar;Ryu, Jee-Youl;Noh, Seok-Ho;Kil, Keun-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2015.10a
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    • pp.861-862
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    • 2015
  • In this paper we present a low area 12-bit SAR ADC (Successive Approximation Register Analog-to-Digital Converter). The proposed circuit is fabricated using Magnachip/SK Hynix 1-Poly 6-Metal $0.18-{\mu}m$ CMOS process, and it is powered by a 1.8-V supply. Total chip area is reduced by replacing the MIM capacitors with MOS capacitors instead of the capacitors consisting of overall part in chip area. The proposed circuit showed improved power dissipation of 1.9mW, and chip area of $0.45mm^2$ as compared to conventional research results at the power supply of 1.8V. The designed circuit also showed high SNDR (Signal-to-Noise Distortion Ratio) of 70.51dB, and excellent effective number of bits of 11.4bits.

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