• 한국정보통신학회논문지
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• 제24권10호
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• pp.1306-1311
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• 2020

본 연구에서는 Ni cluster를 이용하여 제작된 나노 구조체를 반사방지막으로 활용하여 비가시광 UV 광통신용 신호 수신단에 적용 가능한 AlGaN 광다이오드의 성능을 개선하는 구조를 제안하였다. 반사방지막의 제작은 SiO2 위에 Ni cluster를 형성한 후 SiO2를 부분적으로 식각하는 방식으로 제조하였다. 반사방지막이 적용된 샘플은 반사방지막이 없는 구조의 샘플에 비해 상대적으로 작아진 반사도를 보였으며 나노구조체가 없는 SiO2 가 증착된 구조에 비해서 입사 광파장의 변화에 대해 균일한 반사도를 보였다. 최종적으로 2 nm 두께의 Ni 층을 열처리하여 제작된 Ni cluster를 이용한 반사방지막을 적용하여 UV 광다이오드를 제작하였고, 그 결과 SiO2 단일막을 가진 센서에 비해 240 nm에서 270 nm 파장영역에서 개선된 광반응도를 보였다.

• 공업화학
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• 제21권5호
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• pp.564-569
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• 2010

박막 및 디스플레이 분야에서는 광학 부품소재의 우수한 광 투과성과 투명성을 요구하는 수요가 증가함에 따라 우수한 반사방지 특성의 부여에 대하여 관심이 집중되고 있는 실정이다. 본 연구에서는 반사방지 기능을 부여하기 위하여 졸-겔법에 의한 수열합성법을 통하여 기저 물질 표면에 산화알루미늄을 나노 크기 꽃 형태의 프레임 구조를 가진 단일 산화물층을 형성시키고자 하였다. 코팅 층 시편의 특성은 UV-Vis 분광기, FT-IR 분광기, XRD 및 FE-SEM을 이용하여 분석하였다. 알루미나 졸이 코팅된 시편들의 모폴로지는 수열합성의 온도와 시간 및 초음파 제공에 의해 조절되도록 하였다. 꽃 형태의 나노 프레임 구조 형태로 구성된 코팅 층에서 높은 광투과율과 반사방지특성이 발현되었다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 추계학술대회 논문집
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• pp.217-220
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• 2009

This paper presents fabrication method of nano-structured PMMA substrates as well as evaluations of their optical transmittance. For anti-reflective surface, surface coating method had been conventionally used. However, it requires high cost, complicated process and post-processing times. In this study, we suggested the fabrication method of anti-reflective surface by the hot embossing process. Using the nano patterned master fabricated by anodic aluminum oxidation process. Anodic aluminum oxide(AAO) is widely used as templates or a molds for various applications such as carbon nano tube (CNT), nano rod and nano dots. Anodic aluminum oxidation process provides highly ordered regular nano-structures on the large area, while conventional pattering methods such as E-beam and FIB can fabricate arbitrary nano-structures on small area. We fabricated a porous alumina hole array with various inter-pore distance and pore diameter. In order to replicate nano-structures using alumina nano hole array patterns, we have carried out hot-embossing process with PMMA substrates. Finally the nano-structured PMMA substrates were fabricated and their optical transmittances were measured in order to evaluate the charateristivs of anti-reflection. Anti-reflective structure can be applied to various displays and automobile components.

• 한국생산제조학회지
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• 제18권6호
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• pp.697-701
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• 2009

A simple method for the fabrication of porous nano-master for the anti-reflection effect on the transparent substrates is presented. In the conventional fabrication methods for antireflective surface, coating method using materials with low refractive index has usually been used. However, it is required to have a high cost and long processing time for mass production. In this paper, we developed a porous nano-master with anti-reflective surface for the molding stamper of the injection mold, hot embossing and UV imprinting by using the aluminum anodizing process. Through two-step anodizing and etching processes, a porous nano-master with anti-reflective surface was fabricated at the large area. Pattern size Pore diameter and inter-pore distance are about 130nm and 200nm, respectively. In order to replicate anti-reflective structure, hot embossing process was performed by varying the processing parameters such as temperature, pressure and embossing time etc. Finally, antireflective surface can be successfully obtained after etching process to remove selectively silicon layer of AAO master.

• 한국표면공학회지
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• 제43권2호
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• pp.97-104
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• 2010

In this paper, we conducted MATLAB simulation using the reflectance formula and the Planck's black body radiation principle, for the purpose of identifying the opimum material and thickness of anti-reflective coating from double layered structures. We found that the optimum condition was obtained when refractive index of upper layer is 1.44 and that of lower layer is 2.29. As materials close to these refractive indices, $MgF_2$ as the upper layer and $HfO_2$, ZnS, $TiO_2$ as the lower layer were suggested. The best result in an average reflectance of 2.759% was obtained from a double layered structure of $MgF_2$ 94 nm/ZnS 55 nm.

• 한국표면공학회지
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• 제48권2호
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• pp.50-55
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• 2015

$Al_2O_3$ thin films were deposited on the moth eye anti-reflective nanostructured polycarbonate films by atomic layer deposition (ALD) techniques. Without ALD-$Al_2O_3$ thin films, moth eye anti-reflective nanostructured films had a high optical transmittance of 95.47% at a wavelength of 550 nm and a very poor hardness of 0.1381 GPa. With increasing the thickness of $Al_2O_3$ thin films from 5 to 25 nm, the transmittance of moth eye anti-reflective nanostructured films was gradually decreased from 94.94 to 93.12%. On the other hand, the hardness of the films was greatly increased from 0.3498 to 0.7806 GPa with increasing the thickness of $Al_2O_3$ thin films. This result shows that ALD thin films can be applied to improve mechanical properties with an adequate optical transmittance of the conventional moth eye anti-reflection nanostructure films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 추계학술대회 논문집
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• pp.133-134
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• 2007

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.90.2-90.2
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• 2010

The crystalline silicon solar cells have been optical losses. but it can be reduced using light trapping by texture structure and anti-reflection coating. The high reflective index of crystalline silicon at solar wavelengths(400nm~1000nm) creates large reflection losses that must be compensated for by applying anti-reflection coating. In this study, the use of porous silicon(PSi) as an active material in a solar cell to take advantage of light trapping and blue-harvesting photoluminescence effect. Porous silicon is form by anodization and can be obtained in an electrolyte with hydrofluoric. We expect our research can results approaching to lower than 10% of several reflectance by porous silicon solar cells.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.129-130
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• 2008