• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.73-76
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• 2016

Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.18 no.6
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• pp.697-701
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• 2009

A simple method for the fabrication of porous nano-master for the anti-reflection effect on the transparent substrates is presented. In the conventional fabrication methods for antireflective surface, coating method using materials with low refractive index has usually been used. However, it is required to have a high cost and long processing time for mass production. In this paper, we developed a porous nano-master with anti-reflective surface for the molding stamper of the injection mold, hot embossing and UV imprinting by using the aluminum anodizing process. Through two-step anodizing and etching processes, a porous nano-master with anti-reflective surface was fabricated at the large area. Pattern size Pore diameter and inter-pore distance are about 130nm and 200nm, respectively. In order to replicate anti-reflective structure, hot embossing process was performed by varying the processing parameters such as temperature, pressure and embossing time etc. Finally, antireflective surface can be successfully obtained after etching process to remove selectively silicon layer of AAO master.

• Journal of the Korean institute of surface engineering
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• v.48 no.2
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• pp.50-55
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• 2015

$Al_2O_3$ thin films were deposited on the moth eye anti-reflective nanostructured polycarbonate films by atomic layer deposition (ALD) techniques. Without ALD-$Al_2O_3$ thin films, moth eye anti-reflective nanostructured films had a high optical transmittance of 95.47% at a wavelength of 550 nm and a very poor hardness of 0.1381 GPa. With increasing the thickness of $Al_2O_3$ thin films from 5 to 25 nm, the transmittance of moth eye anti-reflective nanostructured films was gradually decreased from 94.94 to 93.12%. On the other hand, the hardness of the films was greatly increased from 0.3498 to 0.7806 GPa with increasing the thickness of $Al_2O_3$ thin films. This result shows that ALD thin films can be applied to improve mechanical properties with an adequate optical transmittance of the conventional moth eye anti-reflection nanostructure films.

• Journal of Hydrogen and New Energy
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• v.25 no.2
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• pp.145-150
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• 2014

This study investigates the preparation of anti-reflective (AR) coating film to improve the efficiency of solar cell. The AR coating film was successfully obtained by dip-coating with AR coatings prepared by sol-gel method. Fluoroalkylsilane was additionally introduced into the coatings to give the self-cleaning effect of AR coating film. We performed the abrasion test, pencil scratch hardness test and cross-cut test to identify the mechanical strength of AR coating film. As the results, the transmittance of AR coating films with 9.07, 18.13 and 27.20 of IPA/MTMS molar ratios were 93.1, 93.6 and 95.3%, respectively. The water contact angle and transmittance of AR coating film increased by the introduction of hydrophobicity. The prepared AR coating film shows the high level of abrasion, hardness and adhesion. The IPA/MTMS molar ratio of 27.20 and the withdrawing speed range of 0.20 ~ 0.28cm/sec are the optimal coating condition in terms of the transmittance and mechanical strength of AR coating film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.200-201
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• 2008

태양전지 제작 시 반사방지막(Anti-reflection Coating)이 태양전지 효율에 미치는 영향을 알아보기 위한 실험으로 최적의 가스비를 알아보기 위하여 Plasma Enhanced Chemical Vapor Deposition(PECVD)를 이용한 Silicon nitride 증착 실험이다. SiH4 가스를 45 sccm으로 고정시킨 상태에서 NH3를 25,45,60,90,135 sccm으로 가변하여 Carrier Lifetime과 Refractive index를 측정하였다. PECVD의 조건은 기판온도 $450^{\circ}C$, Chamber 압력 1 Torr, 증착두께 $1000\AA$으로 고정하였다. 증착 후 500, 600, 700, $800^{\circ}C$로 열처리를 하고나서 Carrier Lifetime을 측정하여 열처리에 대한 효과도 알아보았다.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.524-530
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• 2008

Anti-Reflective (AR) thin film coatings of $SiO_2$ (n= 1.48) and $TiO_2$ (n=2.17) were deposited by ion-beam assisted deposition (IBAD) with End-Hall ion source and conventional electron beam (e-beam) evaporation to investigate the effect of deposition method on the refractive indicies (n) of the fIlms. Green-light generation using a GaAs laser diode was achieved via excitation of the second harmonic. The latter resulted from the transmission of the fundamental guided-mode wave of 1064 nm through periodically poled $LiNbO_3$. Large differences in the refractive indicies of each of the layers in the multilayer coating may improve AR performance. IBAD of $SiO_2$ reduced its refractive index from 1.45 to 1.34 at 1064 nm. Conversely, e-beam evaporation of $TiO_2$ increased its refractive index from 1.80 to 2.11. In addition, no fluctuations in absorption at the wavelength of 1064 nm were found. The results suggest that films prepared by different deposition methods can increase the effectiveness of multilayer AR coatings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.90.2-90.2
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• 2010

The crystalline silicon solar cells have been optical losses. but it can be reduced using light trapping by texture structure and anti-reflection coating. The high reflective index of crystalline silicon at solar wavelengths(400nm~1000nm) creates large reflection losses that must be compensated for by applying anti-reflection coating. In this study, the use of porous silicon(PSi) as an active material in a solar cell to take advantage of light trapping and blue-harvesting photoluminescence effect. Porous silicon is form by anodization and can be obtained in an electrolyte with hydrofluoric. We expect our research can results approaching to lower than 10% of several reflectance by porous silicon solar cells.

• Journal of Plant Biotechnology
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• v.6 no.4
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• pp.259-264
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• 2004

The present study describes the ameliorating effect of $Ca^{++}\;on\;Cd^{++}$ toxicity on the germination, early growth of mungbean seedlings, nitrogen assimilation enzyme. s-nitrate reductase (NR), nitrite reductase (NIR), anti-oxidant enzymes (POD, CAT and SOD) and on the accumulation of hydrogen peroxide and sulphydryls. $Cd^{++}$ inhibited seed germination and root and shoot length of seedlings. While NR activity was down- regulated, the activities of NIR, POD and SOD were up- regulated with $Cd^{++}$ treatment. $Cd^{++}$ treatment also increased the accumulation of sulphydryls and peroxides, which is reflective of increased thiol rich proteins and oxidative stress. $Ca^{++}$ reversed the toxic effects of $Cd^{++}$ on germination and on early growth of seedlings as well as on the enzyme activities, which were in turn differentially inhibited with a combined treatment with calcium specific chelator EGTA. The results indicate that the external application of $Ca^{++}$ may increase the tolerance capacity of plants to environmental pollutants by both up and down regulating metabolic activities. Abbreviations: $Cd^{++}= cadmium,\;Ca^{++} = calcium$, NR= nitrate reductase, NIR=nitrite reductase, POD = peroxidse, SOD= superoxide dismutase, CAT= catalase, EGTA= ethylene glycol-bis( $\beta-aminoethyl ether$)-N,N,N,N-tetraacetic acid.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.490-495
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• 1999

In 0.18 $\mu \textrm m$ LOGIC device, the etch rate of NMOS polysilicons is different from that of PMOS polysilicons due to the state of polysilicon to manufacture gate line. To control the etch profile, we tested the ratio of $Cl_2$/HBr gas and the total chamber pressure, and also we reduced Back He pressure to get the vertical profile. In the case of manufacturing the gate photoresist line, we used Bottom Anti-Reflective Coating (BARC) to protect refrection of light. As a result we found that $CF_4O_2$ gas is good to etch BARC, because of high selectivity and good photoresist line profile after etching BARC. in the results of the characterization of plasma damage to the antenna effect of gate oxide, NO type thin film(growing gate oxide in 0, ambient followed by an NO anneal) is better than wet type thin film(growing gate oxide in $0_2+H_2$ ambient).