• Title/Summary/Keyword: Antenna Bias

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Design and Experiment of Ku_band Linear Active Phased Array Antenna System (Ku 대역 선형 능동 위상 배열 안테나 시스템 설계 및 실험)

  • Ryu Sung-Wook;Eom Soon-Young;Yun Jae-Hoon;Jeon Soon-Ick;Kim Nam
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.7 s.110
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    • pp.694-705
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    • 2006
  • In this paper, the linear active phased array antenna system operated in Ku DBS band was designed and experimented. The antenna system was composed of sixteen radiating active channels and Wilkinson power combiners with 16-channel inputs, a stabilizing DC bias and phase control board. Electrical beams of the antenna system can be formed by controling the phase-states of 3-bit digital phase shifter inside each active channel by virtue of the phase control board. The amplitude and phase deviations measured between active channels were less than ${\pm}0.8dB$ and ${\pm}15^{\circ}$, respectively, and the noise figure of each active channel was measured less than 1.2 dB in the operating band. The measured performances of the overall antenna system showed the antenna gain of more than 23.07 dBi and the sidelobe level of less than -11.17 dBc, and the bore-sight cross-polarization level of less than -12.75 dBc in the operating band. Also, by phase-controlling active channels, the beam scan patterns at $10^{\circ},\;20^{\circ},\;30^{\circ}$ were measured, and the losses caused by the corresponding beam scanning were 1.1 dB, 2.5 dB and 3.6 dB from the measurements, respectively.

A Study on the Characteristic of Variable Impedance Line using DGS (DGS를 이용한 가변 임피던스 선로 특성에 관한 연구)

  • Kim Young-Ju;Joung Myoung-Sub;Park Jun-Seok;Cho Hong-Goo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.1
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    • pp.35-40
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    • 2005
  • In this paper, we designed and fabricated the variable impedance line by using the DGS(Defected Ground Structure) which is useful in mounting the external lumped elements. Also we used a varactor diode as Control device stuff at the proposed variable impedance line. We are able to change the impedance of transmission line as varied the capacitance of varactor diode by adjusting DC bias. The impedance variation of the proposed DGS line is about maximum 70 Ω. We will study about the application of DAM(Direct antenna modulation) in the future work.

A Study on Waveguide Slotted Active Phased Array Radar Target Information Error Compensation Technique (도파관 슬롯 방식의 능동위상배열레이더 표적정보 오차보상기법 연구)

  • Yoo, Dong-gil;Kim, Duck-hwan;Kim, Han-Saeng;Lee, Ki-Won
    • Journal of the Korea Institute of Military Science and Technology
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    • v.22 no.1
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    • pp.11-19
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    • 2019
  • The waveguide slotted active phased array radar is characterized in that the beam is tilt in a specific direction when the feeding position of the antenna is not in the center of the antenna. If the beam deflection phenomenon is not properly compensated, error bias is generated in the target information collected by the radar, and the target accuracy is lowered. In this paper, we describe a technique to compensate the error of the target information that is collected in the active phased array radar of the waveguide slot type instead of the center of the antenna.

Design of UHF Band Microstrip Antenna for Recovering Resonant Frequency and Return Loss Automatically (UHF 대역 공진 주파수 및 반사 손실 오토튜닝 마이크로스트립 안테나 설계)

  • Kim, Young-Ro;Kim, Yong-Hyu;Hur, Myung-Joon;Woo, Jong-Myung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.3
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    • pp.219-232
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    • 2013
  • This paper presents a microstrip antenna which recovers its resonant frequency and impedance shifted automatically by the approach of other objects such as hands. This can be used for telemetry sensor applications in the ultrahigh frequency(UHF) industrial, scientific, and medical(ISM) band. It is the key element that an frequency-reconfigurable antenna could be electrically controlled. This antenna is miniaturized by loading the folded plates at both radiating edges, and varactor diodes are installed between the radiating edges and the ground plane to control the resonant frequency by adjusting the DC bias asymmetrically. Using this voltage-controlled antenna and the micro controller peripheral circuits of reading the returned level, the antenna is designed and fabricated which recovers its resonant frequency and impedance automatically. Designed frequency auto recovering antenna is conformed to be recovered within a few seconds when the resonant frequency and impedance are shifted by the approach of other objects such as hand, metal plate, dielectric and so on.

Effect of the Neutral Beam Energy on Low Temperature Silicon Oxide Thin Film Grown by Neutral Beam Assisted Chemical Vapor Deposition

  • So, Hyun-Wook;Lee, Dong-Hyeok;Jang, Jin-Nyoung;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.253-253
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    • 2012
  • Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

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Quantitative analysis of the errors associated with orbit uncertainty for FORMOSAT-3

  • Wu Bor-Han;Fu Ching-Lung;Liou Yuei-An;Chen Way-Jin;Pan Hsu-Pin
    • Proceedings of the KSRS Conference
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    • 2005.10a
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    • pp.87-90
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    • 2005
  • The FORMOSAT-3/COSMIC mission is a micro satellite mission to deploy a constellation of six micro satellites at low Earth orbits. The final mission orbit is of an altitude of 750-800 lan. It is a collaborative Taiwan-USA science experiment. Each satellite consists of three science payloads in which the GPS occultation experiment (GOX) payload will collect the GPS signals for the studies of meteorology, climate, space weather, and geodesy. The GOX onboard FORMOSAT -3 is designed as a GPS receiver with 4 antennas. The fore and aft limb antennas are installed on the front and back sides, respectively, and as well as the two precise orbit determination (POD) antennas. The precise orbit information is needed for both the occultation inversion and geodetic research. However, the instrument associated errors, such as the antenna phase center offset and even the different cable delay due to the geometric configuration of fore- and aft-positions of the POD antennas produce error on the orbit. Thus, the focus of this study is to investigate the impact of POD antenna parameter on the determination of precise satellite orbit. Furthermore, the effect of the accuracy of the determined satellite orbit on the retrieved atmospheric and ionospheric parameters is also examined. The CHAMP data, the FORMOSAT-3 satellite and orbit parameters, the Bernese 5.0 software, and the occultation data processing system are used in this work. The results show that 8 cm error on the POD antenna phase center can result in ~8 cm bias on the determined orbit and subsequently cause 0.2 K deviation on the retrieved atmospheric temperature at altitudes above 10 lan.

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Development of the passive tag RF-ID system at 2.45 GHz (2.45 GHz 수동형 태그 RF-ID 시스템 개발)

  • 나영수;김진섭;강용철;변상기;나극환
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.8
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    • pp.79-85
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    • 2004
  • In this paper, the RF-ID system for ubiquitous tagging applications has been designed, fabricated and analysed. The RF-ID System consists of passive RF-ID Tag and Reader. The passive RF-ID tag consists of rectifier using zero-bias schottky diode which converts RF power into DC power, ID chip, ASK modulator using bipolar transistor and slot loop antenna. We suggest an ASK undulation method using a bipolar transistor to compensate the disadvantage of the conventional PIN diode, which needs large current Also, the slot loop antenna with wider bandwidth than that of the conventional patch antenna is suggested The RF-ID reader consist of patch array antenna, Tx/Rx part and ASK demodulator. We have designed the RF-ID System using EM and circuit simulation tools. According to the measured results, The power level of modulation signal at 1 m from passive RF-ID Tag is -46.76 dBm and frequency of it is 57.2 KHz. The transmitting power of RF-ID reader was 500 mW

Plasma control by tuning network modification in 4MHz ionized-physical vapor deposition (4MHz I-PVD장치에서 정합회로를 이용한 플라즈마 제어)

  • 주정훈
    • Journal of the Korean Vacuum Society
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    • v.8 no.1
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    • pp.75-82
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    • 1999
  • Ion energy is one of the crucial property in thin film deposition by internal ICP assisted I-PVD. As ion energy is determined by the difference between the plasma potential and the substrate bias potential, ICP excitation frequency was tested with medium frequency of 4 MHz and two types of tuning circuits, alternate and floating LC network with a biasing resistor, were tested. The results showed that plasma potential was less than 5 V in a range of Ar pressures, 5mTorr to 30 mTorr, at 4 MHz RF 600 W and 60 V of maximum RF antenna voltage was maintained either at RF input or output terminal. By proper control of RLC circuit installed after after RF antenna, 50V of RF induced voltage on RF antenna was obtained at 500W input power. The total impedance of RF antenna and plasma was around 10$\Omega$, and minimum RF voltage was obtained with a condition of lowest reactance at most 0.05$\Omega$.

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A Multi-Polarization Reconfigurable Microstrip Antenna Using PIN Diodes (PIN 다이오드를 이용한 다중 편파 재구성 마이크로스트립 안테나)

  • Song, Taeho;Lee, Youngki;Park, Daesung;Lee, Seokgon;Kim, Hyoungjoo;Choi, Jaehoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.5
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    • pp.492-501
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    • 2013
  • In this paper, a multi polarization reconfigurable microstrip antenna that can be used selectively for four polarizations(vertical polarization, horizontal polarization, right hand circular polarization, left hand circular polarization) at the S-band is presented. The proposed antenna consists of four PIN diodes and a microstrip patch with a cross slot and a circular slot and is fed by utiliting electromagnetic coupling between the microstrip patch and the feed line. The proposed antenna has a DC bias network to supply DC voltage to each PIN diode and the polarization can be determined by controlling the ON /OFF states of four PIN diodes. The fabricated antenna has a VSWR below 2 in the vertical polarization(3.17~3.21 GHz), the horizontal polarization(3.16~3.20 GHz), the left hand circular polarization (3.08~3.19 GHz), and the right hand circular polarization(3.10~3.2 GHz) frequency bands. The designed antenna has the cross polarization level higher than 20 dB, a gain over 5 dBi for the linear polarization states, and 3 dB axial ratio bandwidth wider than 50 MHz in the circular polarization states.

Design of a Reconfigurable Slot Antenna using Sequentially Voltage-Applied RF MEMS Switches (순차적으로 전압 인가된 RF MEMS스위치를 이용한 재구성 슬롯 안테나의 설계)

  • Shim, Joon-Hwan;Yoon, Dong-Sik;Park, Dong-Kook;Kang, In-Ho;Jung-Chih Chiao
    • Journal of Navigation and Port Research
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    • v.28 no.5
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    • pp.429-434
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    • 2004
  • In this paper, we designed a reconfigurable slot antenna using sequentially voltage-applied RF MEMS switches. In order to obtain pull-in voltage and maximum stress of the MEMS switches, the switch structures in accordance with airgap height was analyzed by ANSYS simulation A actuation voltage of MEMS switches can be determined by switch geometry and airgap height between a movable plate and a bottom plate. The designed lengths of MEMS switches were 240 $\mu\textrm{m}$, 320 $\mu\textrm{m}$, 400 $\mu\textrm{m}$, respectively and the airgap was 6$\mu\textrm{m}$. The total size of the designed slot antenna was 10 mm x 10 mm and the slot length and width were 500 $\mu\textrm{m}$ and 200 $\mu\textrm{m}$, respectively. The length and size of the CPW feedline were 5 mm and 30-80-30 $\mu\textrm{m}$, respectively. and then the size of the CPW in the slot was 50-300-150 $\mu\textrm{m}$. The tuning of the resonant frequency of the proposed device is realized by varying the electrical length of the antenna, which is controlled by applying the DC bias voltages to the RF MEMS switches. The designed slot antenna has been simulated, fabricated and measured.