• Title/Summary/Keyword: Anodic oxide

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Humidity dependent size control of local anodic oxidation on graphene using Atomic Force Microscope (원자힘 현미경의 습도 조절에 의한 그래핀 국소 산화)

  • Ko, Seoknam;Lee, Seong jun;Son, Maengho;Ahn, Doyeol;Lee, Seung-Woong
    • Proceedings of the Korean Society of Broadcast Engineers Conference
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    • 2014.11a
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    • pp.226-227
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    • 2014
  • We demonstrate nanoscale local anodic oxidation (LAO) patterning on few layer graphene using atomic force microscope (AFM) at room temperature and normal atmosphere. We focus on the humidity dependency in nanoscale oxidation of graphene. The relationship between the oxidation size and the AFM setting values, such as set point, tip speed, and humidity are observed. By changing these values, proper parameters were found to produce features on demand size. This technique provides an easy way to form graphene oxide lithography without any chemical resists. We have obtained oxidation size down to 50-nm with 6-nm-height oxide barrier line with $0.1{\mu}m/s$ tip scanning speed and micrometer size symbols on a graphene flake. We attribute the bumps to local anodic oxidation on graphene surface and combination of oxygen ions into the graphene lattice.

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Fabrication of Alumina Membrane Using Anodic Oxidation Process (양극산화를 이용한 알루미나 나노세공 멤브레인의 제조)

  • Im, W.S.;Cho, K.C.;Cho, Y.S.;Choi, G.S.;Kim, D.J.
    • Korean Journal of Materials Research
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    • v.13 no.9
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    • pp.593-597
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    • 2003
  • Anodic aluminum oxide (AAO) membrane was made of aluminum sheet (99.6%, 0.2 mm thickness). The regular array of hexagonal nano pores or channels were prepared by two step anodization process. A detail description of the AAO fabrication is presented. After the 1st anodization in oxalic acid (0.3 M) at 45 V, The formed AAO was removed by etching in a solution of 6 wt% $H_3$$PO_4$+1.8 wt% $H_2$$CrO_4$. The regular arrangement of the pores was obtained by the 2nd anodization, which was carried out in the same condition as the 1st anodization. Subsequently, the alumina barrier layer at the bottom of the channel layer was removed in phosphoric acid (1M) after removing of aluminum. Pore diameter, density, and thickness could be controlled by the anodization process parameters such as applied voltage, anodizing time, pore widening time, etc. The pore diameter is proportional to the applied voltage and pore widening time. The pore density and thickness can be controlled by anodization temperature and voltage.

Two Dimensional Gold Nanodot Arrays Prepared by Using Self-Organized Nanostructure

  • Jung Kyung-Han;Chang Jeong-Soo;Kwon Young-Soo
    • Journal of Electrical Engineering and Technology
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    • v.1 no.2
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    • pp.246-250
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    • 2006
  • Highly ordered gold nanodot arrays have been successfully obtained by vacuum evaporation using an anodic aluminum oxide (AAO) as a shadow mask. An AAO mask with the thickness of 300 um was prepared through an anodization process. The structure of the nanodot arrays was studied by a field- emission scanning electron microscope (FE-SEM) equipped with an energy dispersive spectrometer (EDS). A tapping mode atomic force microscope (AFM) was employed for studies of height and phase feature. The nanodot arrays were precisely reproduced corresponding to the hexagonal structure of the AAO mask in a large area. In the gold nanodot arrays, the average diameter of dots is approximately the same as the AAO pore size in the range from 70 um to 80 nm and 100 nm center-to-center spacing. EDS analysis indicated that the gold dots were almost entirely consisted of gold, a highly demanded material.

Electrochemical Properties of a Si3N4 Dielectric Layer Deposited on Anodic Aluminum Oxide for Chemical Sensors

  • Jo, Ye-Won;Lee, Sung-Gap;Yeo, Jin-Ho;Lee, Dong-Jin
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.3
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    • pp.159-162
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    • 2016
  • We studied an electrolyte-dielectric metal (EDM) device based on a Si3N4 layer-coated anodic aluminium oxide (AAO) template for chemical sensors. The AAO templates were fabricated using a two-step anodization procedure at 0℃ and 70 V in 0.3 M oxalic acid, after which the Si3N4 was deposited on them using plasma enhanced chemical vapor deposition (PECVD). The average pore size was approximately 106 nm and the depth of the AAO templates was 24.6 nm to 86.5 nm. The Si3N4 layer-coated AAO is more stable than a single AAO template.

CF4/O2 혼합가스 플라즈마 환경에 대한 AAO (Anodic Aluminum oxide) 피막의 오염입자 특성 분석

  • Lee, Seung-Su;Choe, Sin-Ho;O, Eun-Sun;Sin, Jae-Su;Kim, Jin-Tae;Yun, Ju-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.102.1-102.1
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    • 2015
  • 플라즈마를 이용한 건식식각공정은 식각하고자 하는 기판과 더불어 챔버 내부를 구성하고 있는 부품들이 플라즈마에 함께 노출되는 환경이다. 챔버 내부가 장시간 플라즈마에 노출되어 열화 되면 기판의 불량을 야기하는 오염입자의 발생이 증가하므로 양산 공정에서는 그 때마다 내부 부품을 교체하여 청정한 공정 환경을 유지시킨다. 공정 챔버의 내부 부품은 플라즈마로 인한 열화를 방지하기 위하여 내플라즈마성이 우수하다고 알려진 코팅처리를 하여 사용한다. 금까지 플라즈마 식각 공정에 관한 연구는 식각하고자 하는 기판관점에서 활발히 이루어져 왔으나 내플라즈마성 코팅소재 관점에서의 연구 보고는 미미한 실정이다. 본 연구에서는 장시간의 양산공정을 모사하는 가혹한 플라즈마 조건에서 $CF_4/O_2$ 혼합가스를 사용하여 AAO (Anodic Aluminum oxide)피막의 오염입자 특성을 실시간 모니터링 하는 동시에 OES 분석을 수행하여 내플라즈마성 코팅소재의 오염입자 발생 메커니즘에 대하여 분석하였다.

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Structural and Electrical Properties of Nanotube as Various Second Anodizing Time for Biosensor (바이오 센서로의 응용을 위한 2차 양극산화 시간에 따른 나노튜브의 구조적, 전기적 특성)

  • Kim, Yong-Jun;Lee, Tae-Ho;Jung, Hye-Rin;Lee, Sung-Gap
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.10
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    • pp.741-744
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    • 2013
  • In this study, we fabricated anodic aluminum oxide (AAO) membrane by two step anodizing process for pH detection. The structural properties were observed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). Electrochemical measurements of the pH sensor have been performed in capacitance-voltage (C-V) and drift rates. The characterization of AAO membrane exhibited high sensitivity (99.1 mV/pH) at second anodizing time of 4 min.

Fabrication & Properties of Field Emitter Arrays using the Mold Method for FED Application (Mold 법에 의해 제작된 FED용 전계에미터어레이의 특성 분석)

  • ;;;;K. Oura
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.347-350
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    • 2001
  • A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

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Luminescent Polynorbornene/Quantum Dot Composite Nanorods and Nanotubes Prepared from AAO Membrane Templates

  • Oh, Se-Won;Cho, Young-Hyun;Char, Kook-Heon
    • Macromolecular Research
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    • v.17 no.12
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    • pp.995-1002
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    • 2009
  • Luminescent polynorbornene (PNB)/quantum dot (CdSe@ZnS; QD) composite nanorods and nanotubes were successfully prepared using anodic aluminum oxide (AAO) membranes of various pore sizes as templates. To protect QDs with high quantum yield from quenching during the phosphoric acid treatment used to remove the AAO templates, chemically stable and optically clear norbornene-maleic anhydride copolymers (P(NB-r-MA)) were employed as a capping agent for QDs. The amine-terminated QDs reacted with maleic anhydride moieties in P(NB-r-MA) to form PNB-grafted QDs. The chemical- and photo-stability of QDs encapsulated with PNB copolymers were investigated by photoluminescence (PL) spectroscopy. By varying the pore size of the AAO templates from 40 to 380 urn, PNB/QD composite nanorods or nanotubes were obtained with a good dispersion of QDs in the PNB matrix.

Fabrication of the Ni nanorod by AAO template (AAO를 이용한 Ni 나노로드의 제조)

  • Park, B.H.;Kim, I.;Lee, M.G.;Akramov, S.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2006.05a
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    • pp.188-190
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    • 2006
  • 본 연구에서는 Anodic Aluminum Oxide(AAO) 템플레이트를 이용하여 전기도금법으로 일정한 길이와 고밀도 대면적의 Nickel nanorod를 제작하였다. 전기도금법으로 AAO-템플레이트내를 채우는 방법으로 제작되었다. 그 결과 직경 $80{\sim}100$ nm, 길이 $0.5{\mu}m$ 가량의 균일한 nanorod를 직경 40mm, 두께 $0.8{\mu}m$의 대면적 원형 AAO-템플레이트에 가득 채우는데 성공 하였으며 AAO 템플레이트는 제거되어 기판 위에 free-standing 되는 구조로 제작 되었다

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Fabrication of the Ni nanorod by AAO template (집합조직과 AAO Template특성)

  • Park, B.H.;Kim, I.;Lee, M.G.;Akramov, S.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2006.05a
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    • pp.251-253
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    • 2006
  • 본 연구에서는 Anodic Aluminum Oxide(AAO) 템플레이트 제조 시 알루미늄의 결정방위가 세공 형성에 미치는 영향을 연구하였다. 시료는 직경 20mm 두께 2mm의 세가지 단결정 시편을 사용 하였으며 이는 XRD 장비로 $2{\theta}$ 측정결과를 통해 확인 하였다. 양극 산화전 평활한 면을 얻기 위해 다이아몬드분말로 미세연마하였으며 양극산화는 세가지 시편 모두 동일한 조건에서 2단계공정까지 진행하여 반복 실험 하였다. 결과는 전계방출주사전자현미경(FE-SEM)으로 표면의 세공형태를 관찰 하였다.

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