• Journal of Magnetics
• /
• v.20 no.3
• /
• pp.207-210
• /
• 2015

Modifications in the structural and magnetic properties of co-precipitated cobalt ferrite nanoparticles can be accomplished by varying the annealing time periods during the synthetic process. Experimental results show that high-purity cobalt ferrite nanoparticles are obtained using a co-precipitation process. The dependence of the crystallite sizes on the annealing time was successfully demonstrated using XRD and SEM. Finally, vibrating sample magnetometer analyses show that the magnetic properties of the cobalt ferrite nanoparticles depend on their relative particle sizes.

• IE interfaces
• /
• v.12 no.1
• /
• pp.94-101
• /
• 1999

The set covering(SC) problem is the problem of covering all the rows of an $m{\times}n$ matrix of ones and zeros by a subset of columns with a minimal cost. It has many practical applications of modeling of real world problems. The SC problem has been proven to be NP-complete and many algorithms have been presented to solve the SC problem. In this paper we present hybrid simulated annealing(HSA) algorithm based on the Simulated Annealing(SA) for the SC problem. The HSA is an algorithm which combines SA with a crossover operation in a genetic algorithm and a local search method. Our experimental results show that the HSA obtains better results than SA does.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.846-849
• /
• 2009

In this study, we manufactured polymer-LED using light emitting copolymer as the active layer. After cathode layer deposition, we did post-annealing at $150^{\circ}C$ during 10 min in $N_2$ glove box. Then, we confirmed that the efficiency of the device was significantly enhanced by post annealing process. Its value was increased from 0.18(cd/A) to 1.32(cd/A), approximately 7 times. This phenomenon is a result of improved stability between polymer and metal cathode for injection of electrons as the contact density increases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.9
• /
• pp.705-710
• /
• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.

• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.78-84
• /
• 1998

Niobium ions of 380 keV energy have been implanted at 300k in sapphire with a dose of $5\times10^{16}\textrm{ions/cm}^2$ and subsequently thermal annealed up to $1100^{\circ}C$ at reducing atmosphere. The behavior of the radiation damage produced by ion implantation followed by annealing is investigated using optical absorption technique and X-ray photoelectron spectroscopy(XPS). It is found that different defects annealed are dependent on the annealing temperature owing to different mechanisms which are proposed on the basis of the optical absorption measurement, and the implanted niobium in sapphire is in different local environments with different charge states after annealing, which are analyzed by XPS measurements.

• Journal of Advanced Marine Engineering and Technology
• /
• v.18 no.1
• /
• pp.114-122
• /
• 1994

A cold temperature control system for the BAF(batch annealing furnace) has been established in order to reduce energy consumption to imrpove productivity and stabilize the properties of products. Therefore we confirmed a relation between annealing cycle time and atmospheric gas, changing annealing cycle time according to BAF temperature with time during heating and actual temperature measurements cold spot during soaking. The results of the temperature variation effect on the batch annealing are as follows. 1) Cooling rate is increasing gradually with increasing atmospheric gas flow, but heating rate is hardly increasing without atmospheric gas component. Heating time is reduced to one half with increasing atmospheric gas flow rate and changing of atmospheric gas component from HNx to Ax gas and annealing cycle time is reduce to 2.7 times. 2) With enlarging the difference between furnace temperature and soaking temperature at the HNx BAF, heating time becomes short, but cooling time is indifferent. 3) If temperature difference of 300.deg. C in the temperature change of cold spot according to the annealing cycle control temperature, Hi-CON/H2BAF is interchanging at each other at 26hours, but HNxBAF at 50 hours. 4) Soaking time at batch annealing cycle determination is made a decision by the input coil width, and soaking time for quality homogenization of 1219 mm width coil must be 2.5 hours longer then that of 914mm width coil for the same coil weight at Hi-CON/H2BAF. But, it is necessary to make 2 hours longer at HNxBAF.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.2
• /
• pp.58-61
• /
• 2009

The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and $SiO_2$ protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of $9.44{\times}10^{-4}{\Omega}cm$ was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at $250-400^{\circ}C$ for 1 h in hydrogen ambient. The minimum resistivity obtained was $8.32{\times}10^{-4}{\Omega}cm$ as-annealed at $300^{\circ}C$. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at $110^{\circ}C$ for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with $SiO_2$ protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and $SiO_2$ protection layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.2
• /
• pp.162-165
• /
• 2011

In this paper, $CuInSe_2$ thin film was prepared by use of the co-evaporation method with the variation of the substrate temperature in the range of $100^{\circ}C$ to $400^{\circ}C$. The film was annealed at $300^{\circ}C$ for an hour in a vacuum chamber at $3{\times}10-4$ Pa. After annealing, the thin film prepared at the substrate temperatures of $100^{\circ}C$ and $200^{\circ}C$ was observed. The XRD (x-ray diffraction) pattern of sample prepared at $100^{\circ}C$ showed the single phase formation of $CuInSe_2$. However, at $200^{\circ}C$, there was no apparent difference in the XRD pattern except a variation in the intensity of the peak. As the annealing treatment of substrate improved the crystal structure of the film, it affected to the increase of an electron mobility, resulted in an increase in conductivity and a decrease in resistance. As a results, when the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the sheet resistance was 1.534 $\Omega/\Box$ and 1.554 $\Omega/\Box$, respectively, and the resistivity was $1.76{\times}10-6\;{\Omega}{\cdot}cm$ and $1.7210-6\;{\Omega}{\cdot}cm$, respectively. From the absorption spectrum measurements, there was no variation between the before and after annealing conductions. And it means that the annealing step does not affect the thickness of the thin film.

• Korean Journal of Materials Research
• /
• v.17 no.4
• /
• pp.227-231
• /
• 2007

Transparent conducting indium tin oxide (ITO) films were deposited onto the Polyethersulfone (PES) substrate by using a magnetron sputter type negative metal ion source. In order to investigate the influence of cesium (Cs) partial pressure during deposition and annealing temperature on the optoelectrical properties of ITO/PES film the films were deposited under different Cs partial pressures and post deposition annealed under different annealing temperature from $100^{\circ}C$ to $170^{\circ}C$ for 20 min at $3\;{\times}\;10^{-1}$ Pa. Optoeleetrical properties of ITO films deposited without intentional substrate heating was influenced strongly by the Cs partial pressure and the Cs partial pressure of $1.5\;{\times}\;10^{-3}$ Pa was characterized as an optimal Cs flow condition. By increasing post-deposition vacuum annealing temperature both optical transmission in visible light region and electrical conductivity of ITO films were increased. Atomic force microscopy (AFM) micrographs showed that the surface roughness also varied with post-deposition vacuum annealing temperature.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.2
• /
• pp.69-74
• /
• 2017

Effect of post-annealing treatment times at $200^{\circ}C$ on the peel strength of screen-printed Ag film/polyimide substrate were systematically investigated by $180^{\circ}$ peel test for thermal reliability assessment of printed interconnect. Initial peel strength around 16.7 gf/mm increased up to 29.4 gf/mm after annealing for 24hours, and then sharply decreased to 22.3, 3.6, 0.6, and 0.1 gf/mm after 48, 100, 250, and 500 hours, respectively. Ag-O-C chemical bonding as well as binder organic bridges formations seemed to be responsible for interfacial adhesion improvement after the initial annealing treatment, while excessive Cu oxide formation at Cu/Ag interface seems to be closely related to sharp decrease in peel strength for longer annealing times.