• Korean Journal of Materials Research
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• v.14 no.10
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.57-62
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• 2014

Using flexible bismaleimide-triazine co-polymer as a substrate, inkjet-printed Cu films were also investigated for low-cost and process feasibility of flexible electronics. After annealing at $200^{\circ}C$ for 1 h under various reducing ambient, surface color was changed to red and electrical resistivity was decreased to the level of conductor under formic acid ambient. However, its resistivity was much higher than conventional copper films due to surface crack. In order to reduce the residual film stress after annealing, additional isothermal treatment was inserted before anneal hiring the stress relaxation applied in processes of amorphous materials. As a result, no surface crack was observed and electrical resistivity of $3.4{\mu}{\Omega}cm$ was measured after annealing at $230^{\circ}C$ with stress relaxation while electrical resistivity of $7.4{\mu}{\Omega}cm$ was observed after normal annealing without relaxation. The effect of stress relaxation was also confirmed by observing surface crack after decreasing the relaxation time to 0 min.

• Progress in Superconductivity and Cryogenics
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• v.19 no.2
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• pp.25-28
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• 2017

In superconducting coil applications particularly in wet wound coils, coated conductor (CC) tapes are subjected to different type of stresses that could affect its electromechanical transport property. These include hoop stress acting along the length of the CC tape and the Lorentz force acting perpendicular to the CC tape's surface. Since the latter is commonly associated with the delamination problem of multi-layered REBCO CC tapes, more understanding and attention on the delamination phenomena induced in the case of coil applications are needed. Difference on the coefficient of thermal expansion (CTE) of each constituent layer of the CC tape, the bobbin, and the impregnating materials is the main causes of delamination in CC tapes when subjected to thermal and mechanical cycling. In the design of degradation-free superconducting coils, therefore, characterization of the delamination behaviors including mechanism and strength in the multi-layered REBCO CC tapes becomes a critical issue. Various trials to increase the delamination strength by improving interface characteristics at interlayers have been performed. In this study, in order to investigate the influences of laser cleaning and Ag annealing treated at the substrate side surface, transverse tensile tests were conducted under different sample configurations using $4.5mm{\times}8mm$ upper anvil. The mechanical delamination strength of differently processed CC samples was examined at room temperature (RT). As a result, the Sample 1 with the additional laser cleaning and Ag annealing processes and the Sample 2 with additional Ag annealing process only showed higher mechanical delamination strength as compared to the Sample 3 without such additional treatments. Sample 3 showed quite different behavior when the loading direction is to the substrate side where the delamination strength much lower as compared to other cases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• Journal of the Korean Magnetics Society
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• v.12 no.2
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• pp.64-67
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• 2002

IrMn pinned spin valve (SV) films with stacks of Ta/NiFe/IrMn/CoFe/Cu/CoFe/NiFe/Ta were prepared by dc sputtering onto thermally oxidized Si (111) substrates at room temperature under a magnetic field of about 100 Oe. The annealing cycle number and temperature dependence of exchange coupling field (H$_{ex}$), magnetoresistance (MR) ratio, and coercivity (H$_{c}$) were investigated. By optimizing the process of deposition and post thermal annealing condition, we obtained the IrMn based SV films with MR ratio of 3.6%, H$_{ex}$ of 1180 Oe for the pinned layer. The H$_{ex}$ is stabilized after the second annealing cycle and it is thought that this SV reveals high thermal stability. The H$_{ex}$ maintained its strength of 600 Oe in operation up to 24$0^{\circ}C$ and decreased monotonically to zero at 27$0^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.23 no.3
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• pp.98-103
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• 2013

The magnetic easy axis of the ferromagnetic layer for the dual-type GMR-SV (giant magnetoresistance-spin valve) having NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multuilayer structure controlled by the post annealing treatment. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetic easy axis of the free and the pinned layers are measured by the different angles for the applied fields. By investigating the switching process of magnetization for an arbitrary measuring direction, the optimum annealing temperature having a steady and isotropy magnetic sensitivity of 2.0 %/Oe was $105^{\circ}C$. This result suggests that the in-plane orthogonal magnetization for the dual-type GMR-SV film can be used by a high sensitive biosensor.

• Journal of the Korean Society for Heat Treatment
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• v.9 no.2
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• pp.121-129
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• 1996

The solubility of Ti in Al matrix was determined by X-ray diffraction method on two different mechanical alloying systems, i.e Al+$Al_3Ti$ and Al+Ti alloys. Starting powder compositions of two systems were chosen for final volume fraction of $Al_3Ti$ phase being 25%. The solubility of Ti in ${\alpha}$-Al was estimated by the lattice parameter measurement of Al. For Al+$Al_3Ti$ mixture, it appeared that some of $Al_3Ti$ particles decomposed during milling and maximum solubility of Ti in Al was about 0.99%. The majority of $Al_3Ti$ particles were dispersed uniformly in Al matrix, having approximate size of 100~200 nm. On the other hand, higher Ti solubility of 1.24 wt.% was found in Al+Ti system, with starting composition of Al+10 wt.%Ti. After 15 hours of milling, Ti phase was identified as 20 nm sized particles embedded in Al matrix. The annealing of mechanically alloyed powders from Al+$Al_3Ti$ and Al+10 wt.%Ti systems was followed in the temperature range of 200 to $600^{\circ}C$ to study thermal stability of supersaturated solution of Al(Ti). After annealing, the lattice parameter of Al reverted back to that of pure Al, and the peak intensity ratio of $Al_3Ti$/Al was increased more than the original value before annealing. These results suggest that Ti dissolve into alpha-Al solutions during milling, and by annealing, $Do_{22}-Al_3Ti$ phase forms from Al(Ti) solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.703-707
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• 2015

In this study, we investigated the effect of annealing conditions on the ferromagnetic resonance(FMR) of yttrium iron garnet ($Y_3Fe_5O_{12}$, YIG) thin film prepared on gadolinium gallium garnet ($Gd_3Ga_5O_{12}$, GGG) substrate. The YIG thin films were grown by rf magnetron sputtering at room temperature and were annealed at various temperatures from 700 to $1000^{\circ}C$. FMR characteristics of the YIG thin films were investigated with a coplanar waveguide FMR measurement system in a frequency range from 5 to 20 GHz. X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS) were used to characterize the phase formation, crystal structure and composition of the YIG thin films. Field dependent magnetization curves at room temperature were obtained by using a vibrating sample magnetometer(VSM). The FMR measurements revealed that the resonance magnetic field was highly dependent on the annealing condition: the lowest FMR linewidth can be observed for the $800^{\circ}C$ annealed sample, which agrees with the VSM results. We also found that the Fe and O composition changes during the annealing process play important roles in the observed magnetic properties.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.94-99
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• 2017

Dinickel-silicide $(Ni_2Si)/glass$ was employed as a counter electrode for a dye-sensitized solar cell (DSSC) device. $Ni_2Si$ was formed by rapid thermal annealing (RTA) at $700^{\circ}C$ for 15 seconds of a 50 nm-Ni/50 nm-Si/glass structure. For comparison, $Ni_2Si$ on quartz was also prepared through conventional electric furnace annealing (CEA) at $800^{\circ}C$ for 30 minutes. XRD, XPS, and EDS line scanning of TEM were used to confirm the formation of $Ni_2Si$. TEM and CV were employed to confirm the microstructure and catalytic activity. Photovoltaic properties were examined using a solar simulator and potentiostat. XRD, XPS, and EDS line scanning results showed that both CEA and RTA successfully led to tne formation of nano $thick-Ni_2Si$ phase. The catalytic activity of $CEA-Ni_2Si$ and $RTA-Ni_2Si$ with respect to Pt were 68 % and 56 %. Energy conversion efficiencies (ECEs) of DSSCs with $CEA-Ni_2Si$ and $RTA-Ni_2Si$catalysts were 3.66 % and 3.16 %, respectively. Our results imply that nano-thick $Ni_2Si$ may be used to replace Pt as a reduction catalytic layer for a DSSCs. Moreover, we show that nano-thick $Ni_2Si$ can be made available on a low-cost glass substrate via the RTA process.