• Title/Summary/Keyword: Annealing process

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Improved Characteristics in AlGaN/GaN-on-Si HFETs Using Sacrificial GaOx Process (산화갈륨 희생층을 이용한 AlGaN/GaN-on-Si HFET의 특성 개선 연구)

  • Lee, Jae-Gil;Cha, Ho-Young
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.2
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    • pp.33-37
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    • 2014

  • We have developed a novel passivation process employing a sacrificial gallium oxide process in order to recover the surface damage in AlGaN/GaN HFETs. Even with a conventional prepassivation process, surface damage during high temperature ohmic annealing cannot be avoided completely. Therefore, it is necessary to recover the damaged surface to avoid the characteristic degradation. In this work, a sacrificial gallium oxide process has been proposed in which the damaged surface after ohmic annealing was oxidized by oxygen plasma treatment and thereafter etched back using HCl. As a result, the leakage current was dramatically reduced and thus the subthreshold slope was significantly improved. In addition, the maximum drain current level was increased from 594 to 634 mA/mm. To verify the effects, the surface conditions were carefully investigated using X-ray photoelectron spectroscopy.

  • https://doi.org/10.5573/ieie.2014.51.2.033 인용 PDF KSCI

An Implementation of Efficient OTC(Over-The-Cell) Channel Router (효과적인 OTC 채널 라우터의 구현)

  • Jang, Seung-Kew;Chang, Hoon
    • Proceedings of the KIEE Conference
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    • 1998.11b
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    • pp.591-593
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    • 1998

  • As evolution of the process technology, we proposed the Over-The-Cell channel routing algorithm for the advanced three-layer process. The proposed algorithm simplifies the channel routing problem, and then makes use of Simulated Annealing Technique to converge at global optimal solution. Also, we proposed a new method to remove the cyclic vertical constraints which are known to be the hardest element in the channel routing problem and a way to detect the local minimal solution and escape from it successfully.

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