• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.6
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• pp.338-342
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• 2011

Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on glass substrate and then the effect of post deposition annealing at nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes at different temperature of 150, 300 and $450^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $450^{\circ}C$ have the highest optoelectrical performance in this study.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.144-148
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• 2015

We grew spinel structured $CoMn_2O_4$ thin films and have studied post-growth annealing effects on their physical properties. After post-growth annealing at $700^{\circ}C$ that is lower than the growth temperature ($720^{\circ}C$), crystal structure became cleared accompanying a change of surface structure. In the temperature dependences of magnetization, phase transitions were observed at ~100 K for both before and after post-growth treated samples which were not observed for the bulk. For both samples, ferromagnetic behaviors were observed above 100 K while it turned to ferrimagnetism at low temperature below 100 K. In particular, the ferrimagnetic behavior became strong after the post-growth treatment. These results indicate that the post-growth annealing process plays an important role in determining the physical properties of spinel $CoMn_2O_4$ thin film.

• Journal of the Korean Magnetics Society
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• v.26 no.1
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• pp.7-12
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• 2016

Effects of annealing of the gas-atomized Fe-9%Si-2%Cr powder which is suitable for high frequency application in mobile devices because of its high electrical resistivity were studied with an emphasis on the order-disorder phase transition. The formation of B2 ordered phase could not be suppressed during atomization process. When the powder was annealed at a temperature higher than $550^{\circ}C$ the peak diffracted from $DO_3$ phase could be detected. With increasing annealing temperature lattice parameter and coercivity decreased. An interesting phenomenon was an abrupt increment of coercivity in the powder annealed at $450^{\circ}C$. Highest permeability could be shown in the powder annealed at a relative low temperature of $150^{\circ}C$ and then the permeability decreased with annealing temperature. The above-mentioned results could be successfully explained by both the formation of $DO_3$ ordered phases and the change of electrical resistivity of the Fe-Si-Cr powder which was also originated from the phase transition.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.2
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• pp.26-32
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• 2021

The photovoltaic properties and microstructure changes were observed while perovskite solar cells (PSCs) with a fabricated carbon electrode were formed using the following annealing processes: hot-plate, oven, and rapid thermal annealing (RTA). Perovskite solar cells with a glass/FTO/compact TiO2/meso TiO2/meso ZrO2/carbon structure were prepared. The photovoltaic properties and microstructure changes in the PSCs were analyzed using a solar simulator, optical microscopy, and field emission scanning electron microscopy. An analysis of the photovoltaic properties revealed outstanding properties when RTA was applied to the cells. Microstructure analysis showed that perovskite was formed locally on the carbon electrode surface when hot-plate and oven annealing were applied. On the other hand, PSC with RTA showed a flat surface without extra perovskite agglomeration. Denser perovskite formed on the porous carbon electrode layer with RTA showed superior photovoltaic properties. These results suggest that the RTA process might be appropriate for the massive production of carbon electrode PSCs considering the processing time.

• Korean Journal of Materials Research
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• v.31 no.6
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• pp.320-324
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• 2021

Effects of growth variables and post-growth annealing on the optical, structural and electrical properties of magnetron-sputtered Ga_0.04Mg_0.10Zn_0.86O films are characterized in detail. It is observed that films grown from pure oxygen plasma showed high resistivity, ~10² Ω·cm, whereas films grown in Ar plasma showed much lower resistivity, 2.0 × 10^-2 ~ 1.0 × 10^-1 Ω·cm. Post-growth annealing significantly improved the electrical resistivity, to 4.3 ~ 9.0 × 10^-3 Ω·cm for the vacuum annealed samples and to 1.3 ~ 3.0 × 10^-3 Ω·cm for the films annealed in Zn vapor. It is proposed that these phenomena may be attributed to the improved crystalline quality and to changes in the defect chemistry. It is suggested that growth within oxygen environments leads to suppression of oxygen vacancy (Vo) donors and formation of Zn vacancy (V_Zn) acceptors, resulting in highly resistive films. After annealing treatment, the activation of Ga donors is enhanced, Vo donors are annihilated, and crystalline quality is improved, increasing the electron mobility and the concentration. After annealing in Zn vapor, Zn interstitial donors are introduced, further increasing the electron concentration.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.647-654
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• 2001

Effects of final annealing temperature on the precipitate and oxidation were investigated for the Zr-lNb and Zr-lNb-lSn-0.3Fe alloys. The microstructure and oxidation of both alloys were evaluated for the optimization of final annealing process of these alloys in the annealing temperature regime of 450 to $800^{\circ}C$. The corrosion test was performed under steam at $400^{\circ}C$ for 270 days in a static autoclave. The oxide formed was identified by low angle X-ray diffraction method. The $\beta$-Zr was observed at annealing temperature above $600^{\circ}C$. Above $600^{\circ}C$, the precipitate area volume fraction of Zr-lNb and Zr-1Nb-lSn-0.3Fe alloys appeared to be increased with increasing the final annealing temperature. The corrosion resistance of Zr-lNb was higher than that of Zr- lNb-lSn-0.3Fe alloy. The corrosion rate of both alloys were accelerated due to the formation and growth of $\beta$-Zr with increasing the annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.88-92
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• 2023

The ferroelectricity in Hf_0.5Zr_0.5O₂ (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400℃ or higher to form an orthorhombic phase that results in the ferroelectric properties of the HZO film. However, to realize the integration of ferroelectric HZO films in the back-end-of-line, it is necessary to reduce the annealing temperature below 400℃. This study aims to comprehensively analyze the ferroelectric properties according to the annealing temperature (350-500℃) and time (1-5 h) using a furnace as a crystallization method for HZO films. As a result, the ferroelectric behaviors of the HZO films were achieved at a temperature of 400℃ or higher regardless of the annealing time. At the annealing temperature of 350℃, the ferroelectric properties appeared only when the annealing time was sufficiently increased (4 h or more). Based on these results, it was experimentally confirmed that the optimization of the annealing temperature and time is very important for the ferroelectric phase crystallization of HZO films and the improvement of their ferroelectric properties.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.570-576
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• 2002

Application of the aged Inconel 718 in hydrogen environment is seriously restraint by its high hydrogen embrittlement (HE) sensitivity. m previous researches, we have suggested the possibility and applicability of the laser surface annealing (LSA) process in improving the HE resistance of this alloy. Sequentially, a study on the effects of the precipitates in the Inconel 718 on its HE sensitivity was conducted in this research. Firstly, flat bar specimens were heat-treated to obtain various kinds of precipitation microstructures concerning the ${\gamma}$" phase and the 6 phase. Hydrogen was charged into the specimen by a cathodic charging process. The loss in reduction of area (RA) caused by hydrogen charging was used to assess the HE sensitivity. The HE sensitivity of the alloy was lowered with decreasing the volume fraction of ${\gamma}$". Moreover, it was possible to increase the HE resistance of the aged alloy by dissolving the $\delta$ phase, keeping the strength at the same level as that of the common aged alloy. Thus, we concluded that both the $\delta$ phase and the ${\gamma}$" phase affected the HE sensitivity of Inconel 718. Next, two kinds of notch tensile specimens were fabricated, one kind having $\delta$ phase and the other having no $\delta$ phase. All these specimens were aged via the same aging heat treatment process. The LSA process annealed a thin layer of the notch bottom of each specimen. One specimen of each kind was charged with hydrogen by the cathodic hydrogen charging process. Loss in the notch tensile strength (NTS) caused by hydrogen was used to evaluate the HE sensitivity. It was found that while the HE sensitivity of conventionally aged Inconel 718 was decreased by the LSA process, the HE sensitivity of the $\delta$-free aged Inconel 718 could further be decreased. Therefore, for applications in hydrogen environments, it is possible to fabricate alloys with both good HE resistance and high strength by controlling the precipitation conditions, and to improve HE resistance further via applying the LSA process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.344-349
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• 2005

The optical and electrical characteristics of plasma display panel(PDP) using the vacuum in-line sealing technology compared with the conventional sealing process in this research. This PDP consisted of MgO protecting layer by e-beam evaporation and battier rib, transparent dielectric layer, dielectric layer, and electrodes by screen printer and then sealed off on Ne-Xe(4 ％) 400 Torr and 430。C. The brightness and luminous efficiency were good as the base vacuum level was higher, and it was to check the advantage of high vacuum level sealing, one of the strong points of the vacuum in-line sealing process. However, the brightness and luminous efficiency was dropped sharply because of a crack on MgO protecting layer by the difference of the expansion and contraction stress on high temperature in the vacuum states between MgO and substrate. Fortunately, the crack was prevented by MgO was deposited on higher temperature than 300。C. Finally, the PDP, was fabricated by the vacuum in-line sealing process, resulted the lower brightness than processing only the thermal annealing treatment in the vacuum chamber, but the luminous efficiency was increased by the reducing power consumption with the decreasing luminous current. The vacuum in-line sealing technology was not to need the additional thermal annealing process and could reduce the fabrication process and bring the excellent optical and electrical properties without the crack of MgO protecting layer than the conventional sealing process.