• Korean Journal of Materials Research
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• v.22 no.4
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• pp.202-206
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• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.10
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• pp.3621-3625
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• 2010

Colored cubic-zirconia specimens made by skull melt process were annealed in vacuum at the temperature of $1200^{\circ}{\sim}1400^{\circ}C$ for 10~60 minutes to enhance the color. The three different colored specimens become darker and eventually are black as annealing temperature and time increase. Conventional gem stone grading method and XPS were employed to quantify the property change and to reveal the mechanism of the color change. Color was changed apparently but the hardness and apparent density did not vary with annealing. Based on XPS result, we concluded that the main cause of the color change in cubic zirconia might be the change of Y-O bonding energy state of $Y2_O_3$ phase-stabilizer by vacuum annealing.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.28-33
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• 2011

This paper describes the fabrication of AlN thin films containing iron and iron nitride particles, and the magnetic and electrical properties of such films. Fe-N-Al alloy films were deposited in Ar and $N_2$ mixtures at ambient temperature using Fe/Al composite targets in a two-facing-target DC sputtering system. X-ray diffraction results showed that the Fe-N-Al films were amorphous, and after annealing for 5 h both AlN and bcc-Fe/bct-$FeN_x$ phases appeared. Structure changes in the $FeN_x$ phases were explained in terms of occupied nitrogen atoms. Electron diffraction and transmission electron microscopy observations revealed that iron and iron nitride particles were randomly dispersed in annealed AlN films. The grain size of magnetic particles ranged from 5 to 20 nm in diameter depending on annealing conditions. The saturation magnetization as a function of the annealing time for the $Fe_{55}N_{20}Al_{25}$ films when annealed at 573, 773 and 873 K. At these temperatures, the amount of iron/iron nitride particles increased with increasing annealing time. An increase in the saturation magnetization is explained qualitatively in terms of the amount of such magnetic particles in the film. The resistivity increased monotonously with decreasing Fe content, being consistent with randomly dispersed iron/iron nitride particles in the AlN film. The coercive force was evaluated to be larger than $6.4{\times}10^3Am^{-1}$ (80 Oe). This large value is ascribed to a residual stress restrained in the ferromagnetic particles, which is considered to be related to the present preparation process.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.385-391
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• 2010

Twinning-induced plasticity (TWIP) steels have attracted great attention due to their excellent mechanical properties of high tensile strength (over 800MPa) and high ductility (over 50%), which result from the high strain hardening due to the mechanical twin formation during plastic deformation. The purpose of this study is to investigate the effect of annealing temperature and alloying elements on the mechanical properties of Fe-18Mn-0.6C TWIP steel. In 1.5%Al TWIP steel with 0.123%Ti content, the average recrystallized grain size was reduced to 2.5 ${\mu}m$ by cold rolling and annealing at $800^{\circ}C$ for 5 min, because of the pinning effect of the fine TiC carbides on grain coarsening. The tensile strength was decreased and the ductility was improved with the increase of the annealing temperature. However, a reversion of hardness and yield strength happened between $750^{\circ}C$ and $800^{\circ}C$ due to TiC and $M_3C$ type precipitation. 0.56% Ni added TWIP steel exhibited relatively lower yield strength, because Ni precipitates were not formed during the annealing process. When this specimen was annealed at $800^{\circ}C$ for 5min, the tensile strength and elongation were revealed at 1096MPa and 61.8%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.631-636
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• 2017

The degradation mechanism of $Mo_xW_{1-x}Si_2$ ultrahigh-temperature heating elements fabricated by self-propagating high-temperature synthesiswas investigated. The $Mo_xW_{1-x}Si_2$ specimens (with and without post-annealing) were subjected to ADTs (accelerated degradation tests) at temperatures up to $1,700^{\circ}C$ at heating rates of 3, 4, 5, 7, and $14^{\circ}C/min$. The surface loads of all the specimen heaters were increased with the increase in the target temperature. For the $Mo_xW_{1-x}Si_2$ specimens without annealing, many pores and secondary-phase particles were observed in the microstructure; the surface load increased to $23.9W/cm^2$ at $1,700^{\circ}C$, while the bending strength drastically reduced to 242 MPa. In contrast, the $Mo_xW_{1-x}Si_2$ specimens after post-annealing retained $single-Mo_xW_{1-x}Si_2$ phases and showed superior durability after the ADT. Consequently, it is thought that the formation of microcracks and coarse secondary phases during the ADT are the main causes for the degraded performance of the $Mo_xW_{1-x}Si_2$ heating elements without post-annealing.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.115-121
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• 2013

ZnO film has been used for CIGS solar cells as a buffer layer as itself or by doping Mg and Sn; ZnO film also has been used as a transparent conducting layer by doping Al or B for solar cells. Since ZnO itself is a host material for many applications it is necessary to understand the electrical and optical properties of ZnO film itself with various preparation conditions. We prepared ZnO films by converting ZnS precursor into ZnO film by thermal annealing. ZnO film was formed at low temperature as low as $500^{\circ}C$ by annealing a ZnS precursor layer in air. In the air annealing, the electrical resistivity decreased monotonically with increasing annealing temperature; the intensity of the green photoluminescence at 505 nm increased up to $750^{\circ}C$ annealing. The electrical resistivity further decreased and the intensity of green emission also increased in reducing atmospheres. The results suggest that deep-level defects originated by oxygen vacancy enhanced green emission, which reduce light transmittance and enhance the recombination of electrons in conduction band and holes in valence. More oxidizing environment is necessary to obtain defect-free ZnO film for higher transparency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.392-397
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• 2011

The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)$O_3$ (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.40 no.2
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• pp.92-98
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• 2017

Data clustering determines a group of patterns using similarity measure in a dataset and is one of the most important and difficult technique in data mining. Clustering can be formally considered as a particular kind of NP-hard grouping problem. K-means algorithm which is popular and efficient, is sensitive for initialization and has the possibility to be stuck in local optimum because of hill climbing clustering method. This method is also not computationally feasible in practice, especially for large datasets and large number of clusters. Therefore, we need a robust and efficient clustering algorithm to find the global optimum (not local optimum) especially when much data is collected from many IoT (Internet of Things) devices in these days. The objective of this paper is to propose new Hybrid Simulated Annealing (HSA) which is combined simulated annealing with K-means for non-hierarchical clustering of big data. Simulated annealing (SA) is useful for diversified search in large search space and K-means is useful for converged search in predetermined search space. Our proposed method can balance the intensification and diversification to find the global optimal solution in big data clustering. The performance of HSA is validated using Iris, Wine, Glass, and Vowel UCI machine learning repository datasets comparing to previous studies by experiment and analysis. Our proposed KSAK (K-means+SA+K-means) and SAK (SA+K-means) are better than KSA(K-means+SA), SA, and K-means in our simulations. Our method has significantly improved accuracy and efficiency to find the global optimal data clustering solution for complex, real time, and costly data mining process.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.233-238
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• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.204-210
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• 2008

$1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.