• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.206-211
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• 1992

SIMOX SOI structures were formed by oxygen ion implantation with a dose of 2 1018 ions/cm2 at 180kev and post-implantation annealing at $1250^{\circ}C$ for 6 hours in nitrogen ambient. The oxygen redistribution process during post-implantation annealing was examined by AES and TEM. The electrical property of the structure was investigated by SRP method. We could find oxygen precipitates in SOI layer was discussed. And the limiting factor to the decrease of the precipitates during post-implantation annealing was discussed also.

• Journal of Sensor Science and Technology
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• v.21 no.5
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• pp.385-388
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• 2012

This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 ${\Omega}$.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.5
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• pp.214-216
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• 2005

Photoreflectance (PR) has been measured to investigate the characterization of the $Al_{0.20}Ga_{0.80}As$/GaAs heterostructures. In the PR spectrum, the 'C' peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, binding energy is relatively weak with As evaporation being done to increase Ga. Also obtained is the electric field value according to annealing temperature ($300{\sim}800^{\circ}C$).

• Journal of Magnetics
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• v.7 no.2
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• pp.59-62
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• 2002

Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.

• Structural Engineering and Mechanics
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• v.48 no.3
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• pp.383-394
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• 2013

Cold-formed profiles have been largely used in the building industry because they can be easily produced and because they allow for a wide range of sections and thus can be utilized to meet different project requirements. Attainment of maximum performance by structural elements with low use of material is a challenge for engineering projects. This paper presents a numerical study aimed at minimizing the weight of lipped and unlipped cold-formed channel columns, following the AISI 2007 specification. Flexural, torsional and torsional-flexural buckling of columns was considered as constraints. The simulated annealing method was used for optimization. Several numerical simulations are presented and discussed to validate the proposal, in addition to an experimental example that qualifies its implementation. The ratios between lips, web width, and flange width are analyzed. Finally, it may be concluded that the optimization process yields excellent results in terms of cross-sectional area reduction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.54-57
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• 1992

An electro-optical single modulator is fabricated in X-cut LiNbO$_3$by the annealed proton exchange and self-aligned method. First, the effect of annealing is characterized by examining single optical modulator. It is found that by controlling the annealing time, the single optical modulator can be made widely variable. The on-off state of modulator is performed by annealing process and self-aligned electrodes are used in fabricating the single modulator. The optical single modulator has very good figures of merits : the measured on-off switching voltage of about 2.7V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.41-43
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• 2004

Dielectric thin films of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on $Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.140.1-140.1
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• 2013

The native silicon-oxide (SiOx) layer at the metal/Silicon interface acts as an electrical resistance to the metal contact of devices. Various methods are proposed for removing this layer, such as sputtering before metal contact formation or high temperature annealing. We studied the chemical evolution of the Au/SiOx/Si system during the annealing at $500^{\circ}C$ using a spatially resolved photoelectron emission method. Scanning photoelectron emission microscopy (SPEM) and core level spectra from local area of the sample show the inhomogeneous oxidation and formation of silicide of Au, as well as valence band spectra reveals the role of Au atoms during the dissociation process of SiOx.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.916-919
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• 2004

This paper studied about the (100) orientation of PZT thin films coated on the LNO electrode using a different thermal annealing. The thermal annealing method is divided into two things. The one is the method transferring heat to only the lower substrate and another is transferring heat to all directions. Orientation factor of PZT in the method of transferring heat to only the lower substrate was F=99% in the thermal annealing of the LNO. Orientation factor of PZT was F=67% in the method of transferring heat to all directions.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.06a
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• pp.86-91
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• 1999

High temperature wear behavior of plasma sprayed zirconia based coating with