• Title/Summary/Keyword: Annealing process

Search Result 1,580, Processing Time 0.028 seconds

Influence of Heat Treatment on the Structural, Electrical and Optical Properties of Aluminum-Doped Zinc Oxide Thin Films Prepared by Magnetron Sputtering

  • Jung, Sung Hee;Kong, Seon Mi;Chung, Chee Won
    • Current Photovoltaic Research
    • /
    • v.1 no.2
    • /
    • pp.97-102
    • /
    • 2013
  • Aluminum-doped zinc oxide (AZO) thin films were prepared by dc magnetron sputtering at room temperature and the effect of heat treatment on the structural, electrical and optical properties of the films were examined. As the annealing temperature and time increased, the resistivity decreased and the transmittance improved. All AZO films had c-axis oriented (002) plane of ZnO, regardless of the annealing process employed. As the annealing temperature and time increased, the crystallinity of AZO thin films increased due to the formation of a new ZnO phase in which Al was substituted for Zn. However, at the high annealing temperature of $400^{\circ}C$, the resistivity of the films increased via separation of Zn and Al from ZnO phase due to their low melting points. X-ray diffraction, field emission scanning electron micrograph and Hall effect measurement confirmed the formation of uniformly distributed new grains of ZnO substituted with Al. The variation of Al contents in AZO films was shown to be the primary factor for the changes in resistivity and carrier concentration of the films.

Effect of the Tertiary Recrystallization on the Magnetic Properties of High Silicon Iron (고규소철 강판의 자기적 특성에 미치는 3차 재결정의 영향)

  • Koo, J.M.
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.10 no.4
    • /
    • pp.246-254
    • /
    • 1997
  • The 6.5wt %Si-Fe alloy sheets were made by the twin roll process. The magnetic properties and microstructures of sheets annealed in the sulfur atmosphere were studied. In the as-prepared sheet, non-oriented columnar grains about $10{\mu}m$ in diameter were observed, which grew from the surface to the inner part of the sheet. When the annealing temperature was around $700^{\circ}C$, the primary recrystallization was formed around the middle part of the sheet thickness, and the grain size increased with increasing annealing temperature. At the annealing temperature of $900^{\circ}C$, the grain size became $30{\sim}40{\mu}m$. Around the annealing temperature, the motive force of the grain growth is the grain boundary energy. However, above $1000^{\circ}C$ the surface energy played an important role in the observed grain growth. When the sheet were annealed at $1200^{\circ}C$, the grains whose (100) planes were paralled to the thin plate surface grew, and all sheet surfaces were covered with these grains after 1 hour annealing. This phenomenon is called tertiary recrystallization. A difference in surface energy between (100) and (110) surfaces provides a driving force for growth of tertiary grains. The coercive force was 0.27 mOe and the AC core loss $W_{12/50}$ was 0.38w/kg for the 6.5wt%Si-Fe alloy.

  • PDF

Fabrication of Li2CO3-doped Thin Film Bulk Acoustic Resonator and Structural, Electrical Properties as a Function of Annealing Temperatures (Li2CO3:ZnO를 이용하여 제조한 FBAR의 제작 및 열처리에 따른 구조적, 전기적 특성)

  • Kim, Bong-Seok;Kim, Eung-Kwon;Lee, Tae-Yong;Oh, Su-Young;Song, Joon-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.20 no.2
    • /
    • pp.152-155
    • /
    • 2007
  • In this study, we fabricated FBAR(film bulk acoustic resonator) by using $Li_{2}CO_{3}:ZnO$ as a function of annealing temperature and concentrated on effect of frequency characteristic of FBAR. The results show that the annealing affects resistivity and crystallity. The optimum properties were observed for film annealed at $500^{\circ}C$. The resistivity was $1.5{\times}10^{11}\;{\Omega}{\cdot}cm$ and the roughness was 21.10 nm. And the return loss is improved from -24.9 at $300^{\circ}C$ to -29.8 at $500^{\circ}C$ without the resonant frequency change. We finally confirmed the improvement on the frequency characteristics of FBAR device by annealing process at the optimized condition.

Optimal Annealing of Natural Beryl for Thermoluminescent Dosimetry

  • Moon, Philip S.
    • Nuclear Engineering and Technology
    • /
    • v.6 no.1
    • /
    • pp.3-8
    • /
    • 1974
  • The annealing of natural beryl powder used for the thermoluminescent dosimetry was investigated in order to eliminate effect of previous exposure. Through the glow curve analysis, the optimal annealing treatment was found to be one hour annealing at 145$0^{\circ}C$, but annealing for one hour at 55$0^{\circ}C$ was sufficient for reuse of natural beryl powder. There are two distinguished glow peaks at $65^{\circ}C$ and 20$0^{\circ}C$ of heating temperature during readout process. The $65^{\circ}C$ glow peak fades away rapidly, but the 20$0^{\circ}C$ glow peak remains very stable. It is, therefore, quite feasible to use the 20$0^{\circ}C$ glow peak for thermoluminescent dosimetry.

  • PDF

Annealing Temperature Dependence of Magnetic and Optic Properties of Bi:YIG Films Deposited with Aerosol Deposition Method

  • Shin, Kwang-Ho;Mizoguchi, Masahiko;Inoue, Mitsuteru
    • Journal of Magnetics
    • /
    • v.12 no.3
    • /
    • pp.129-132
    • /
    • 2007
  • Bismuth-substituted yttrium iron garnet (Bi:YIG, $Bi_{0.5}Y_{2.5}Fe_5O_{12}$) films were deposited with aerosol deposition method and their magnetic and optical properties were investigated as a function of annealing temperature. Since the ceramic films deposited with aerosol deposition method have not a perfect crystal structure due to non-uniform internal stress occurred by mechanical collision during their deposition, the post annealing could be a key process to release its internal stress and to improve its micro structure for optimizing the magnetic and magneto-optic properties of films. The crystallinity of Bi: YIG film was improved with increase of annealing temperature, and the saturation magnetization increased up to 87 emu/cc at $800^{\circ}C$. The Faraday rotation increased up to $1.4deg/{\mu}m$ by annealing at $700^{\circ}C$ around the wavelength of $0.5{\mu}m$. The optical transmittance of the Bi:YIG film was also improved in visible region.

Effects of Annealing on Structure and Properties of TLCP/PEN/PET Ternary Blend Fibers

  • Kim, Jun-Young;Seo, Eun-Su;Kim, Seong-Hun;Takeshi Kikutani
    • Macromolecular Research
    • /
    • v.11 no.1
    • /
    • pp.62-68
    • /
    • 2003
  • Thermotropic liquid crystalline polymer (TLCP)/poly(ethylene 2,6-naphthalate) (PEN)/poly(ethylene terephthalate) (PET) ternary blends were prepared by melt blending, and were melt-spun to fibers at various spinning speeds in an effort to improve fiber performance and processability. Structure and property relationship of TLCP/PEN/PET ternary blend fibers and effects of annealing on those were investigated. The mechanical properties of ternary blend fibers could be significantly improved by annealing, which were attributed to the development of more ordered crystallites and the formation of more perfect crystalline structures. TLCP/PEN/PET ternary blend fibers that annealed at 18$0^{\circ}C$ for 2 h, exhibited the highest values of tensile strength and modulus. The double melting behaviors observed in the annealed ternary blend fibers depended on annealing temperature and time, which might be caused by different lamellae thickness distribution as a result of the melting-reorganization process during the DSC scans.

Application of Modified Rapid Thermal Annealing to Doped Polycrystalline Si Thin Films Towards Low Temperature Si Transistors

  • So, Byung-Soo;Kim, Hyeong-June;Kim, Young-Hwan;Hwang, Jin-Ha
    • Korean Journal of Materials Research
    • /
    • v.18 no.10
    • /
    • pp.552-556
    • /
    • 2008
  • Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

Microstructural Evolution of a Cold Roll-Bonded Multi-Layer Complex Aluminum Sheet with Annealing

  • Jo, Sang-Hyeon;Lee, Seong-Hee
    • Korean Journal of Materials Research
    • /
    • v.32 no.2
    • /
    • pp.72-79
    • /
    • 2022
  • A cold roll-bonding process using AA1050, AA5052 and AA6061 alloy sheets is performed without lubrication. The roll-bonded specimen is a multi-layer complex aluminum alloy sheet in which the AA1050, AA5052 and AA6061 sheets are alternately stacked. The microstructural evolution with the increase of annealing temperature for the roll-bonded aluminum sheet is investigated in detail. The roll-bonded aluminum sheet shows a typical deformation structure in which the grains are elongated in the rolling direction over all regions. However, microstructural evolution of the annealed specimen is different depending on the type of material, resulting in a heterogeneous microstructure in the thickness direction of the layered aluminum sheet. Complete recrystallization occurs at 250 ℃ in the AA5052 region, which is lower by 100K than that of the AA1050 region. Variation of the misorientation angle distribution and texture development with increase of annealing temperature also differ depending on the type of material. Differences of microstructural evolution between aluminum alloys with increase of annealing temperature can be mainly explained in terms of amounts of impurities and initial grain size.

Study of the Enhancement of Magnetic Properties of NdFeB Materials Fabricated by Modified HDDR Process

  • Fu, Meng;Lian, Fa-zeng;Wang, jie-Ji;Pei, Wen-Ii;Chen, Yu-lan;Yang, Hong-cai
    • Journal of Magnetics
    • /
    • v.9 no.4
    • /
    • pp.109-112
    • /
    • 2004
  • The HDDR (Hydrogenation-Disproportionation-Desorption-Recombination) process is a special method to produce anisotropic NdFeB powders for bonded magnet. The effect of the modified HDDR process on magnetic properties of $Nd_2Fe_{14}B$-based magnet with several composition $Nd_{11.2}Fe_{66.5-x}Co_{15.4}B_{6,8}Zr{0.1}Ga_x(x=0{\sim}1.0)$ and that of microelement Ga, disproportional temperature and annealing temperature on $_jH_c$, grain size were investigated in order to produce anisotropic powder with high magnetic properties. It was found that modified HDDR process is very effective to enhance magnetic properties and to fine grain size. The addition of Ga could change disproportionation character remarkably of the alloy and could improve magnetic properties of magnet powder. Increasing annealing temperature induces significant grain growth. And grain size produced by modified HDDR process is significantly smaller than those produced by conventional HDDR process.

Silicon Solar Cell Efficiency Improvement with surface Damage Removal Etching and Anti-reflection Coating Process (표면결함식각 및 반사방지막 열처리에 따른 태양전지의 효율 개선)

  • Cho, Chan Seob;Oh, Jeong Hwa;Lee, Byeungleul;Kim, Bong Hwan
    • Journal of the Semiconductor & Display Technology
    • /
    • v.13 no.2
    • /
    • pp.29-35
    • /
    • 2014
  • In this study general solar cell production process was complemented, with research on improvement of solar cell efficiency through surface structure and thermal annealing process. Firstly, to form the pyramid structure, the saw damage removal (SDR) processed surface was undergone texturing process with reactive ion etching (RIE). Then, for the formation of smooth pyramid structure to facilitate uniform doping and electrode formation, the surface was etched with HND(HF : HNO3 : D.I. water=5 : 100 : 100) solution. Notably, due to uniform doping the leakage current decreased greatly. Also, for the enhancement and maintenance of minority carrier lifetime, antireflection coating thermal annealing was done. To maintain this increased lifetime, front electrode was formed through Au plating process without high temperature firing process. Through these changes in two processes, the leakage current effect could be decreased and furthermore, the conversion efficiency could be increased. Therefore, compared to the general solar cell with a conversion efficiency of 15.89%, production of high efficiency solar cell with a conversion efficiency of 17.24% was made possible.