• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.4 no.3
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• pp.209-216
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• 2006

Characteristics of heat release process, while the Wigner energy was drawn off the graphite during DSC(Differential Scanning Calorimenter) measurement as an example of annealing process which is one of release methods of Wigner energy that is contained in the irradiated graphite, was studied. Linear temperature rise method in DSC operation was selected to estimate the total Wigner energy content and the heat release rate of each graphite samples, which were located in several positions in the thermal column in KRR-2 research reactor. As an annealing process in DSC operation Wigner energy of the irradiated graphite samples were totally released by heat supplying to the graphite from room temperature to $500^{\circ}C$, in DSC. Characteristics of Wigner energy release from the graphite sample was well correlated with the various activation energy model of the kinetic equation.

• Journal of Powder Materials
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• v.21 no.3
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• pp.229-234
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• 2014

This study manufactured a CIG-based composite coating layer utilizing a new warm spray process, and a mixed powder of Cu-20at.%Ga and Cu-20at.%In. In order to obtain the mixed powder with desired composition, the Cu-20at.%Ga and Cu-20at.%In powders were mixed with a 7:1 ratio. The mixed powder had an average particle size of $35.4{\mu}m$. Through the utilization of a warm spray process, a CIG-based composite coating layer of $180{\mu}m$ thickness could be manufactured on a pure Al matrix. To analyze the microstructure and phase, the warm sprayed coating layer underwent XRD, SEM/EDS and EMPA analyses. In addition, to improve the physical properties of the coating layer, an annealing heat treatment was conducted at temperatures of $200^{\circ}C$, $400^{\circ}C$ and $600^{\circ}C$ for 1 hour each. The microstructure analysis identified ${\alpha}$-Cu, $Cu_4In$ and $Cu_3Ga$ phases in the early mixed powder, while $Cu_4In$ disappeared, and additional $Cu_9In_4$ and $Cu_9Ga_4$ phases were identified in the warm sprayed coating layer. Porosity after annealing heat treatment reduced from 0.75% (warm sprayed coating layer) to 0.6% (after $600^{\circ}C/1hr$. heat treatment), and hardness reduced from 288 Hv to 190 Hv. No significant phase changes were found after annealing heat treatment.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.260-268
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• 2015

The thermal barrier coating (TBC) for inner wall of liquid-fuel rocket combustor consists of NiCrAlY as bonding layer and $ZrO_2$ as a top layer. In most case, the plasma spray coating is used for TBC process and this process has inherent possibility of cracking due to large difference in thermal expansion coefficients among bonding layer, top layer and metal substrate. In this paper, we suggest crack-free TBC process by using a precise electrodeposition technique. Electrodeposited Ni-P/Cr double layer has similar thermal expansion coefficient to the Cu alloy substrate resulting in superior thermal barrier performance and high temperature oxidation resistance. We studied the effects of phosphorous concentrations (2.12 wt%, 6.97 wt%, and 10.53 wt%) on the annealing behavior ($750^{\circ}C$) of Ni-P samples and Cr double layered electrodeposits. Annealing temperature was simulated by combustion test condition. Also, we conducted SEM/EDS and XRD analysis for Ni-P/Cr samples. The results showed that the band layers between Ni-P and Cr are Ni and Cr, and has no formed with heat treatment. These band layers were solid solution of Cr and Ni which is formed by interdiffusion of both alloy elements. In addition, the P was not found in it. The thickness of band layer was increased with increasing annealing time. We expected that the band layer can improve the adhesion between Cr and Ni-P.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.600-605
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• 2007

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from $100^{\circ}C\;to\;300^{\circ}C$ at intervals of $50^{\circ}C$. The diffract fringe of X-ray, which depended upon the substrate temperature and the Annealing temperature of the manufactured $CuInSe_2$ thin film, was investigated. scanning electron microgaphs of represents a case that a sample manufactured at the substrate temperature of $100^{\circ}C$ was thermally treated at $200{\times}350^{\circ}C$. As a result, at $500^{\circ}C$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known that under this condition, the most excellent thin film was formed, compared with the other conditions.

• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Korean Chemical Engineering Research
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• v.48 no.1
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• pp.53-57
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• 2010

In this work, we made experimental studies on the annealing process of PTFE(polytetrafluoroethylene) at $290{\sim}350^{\circ}C$ and examined the effects on crystallinity and tensile strength of PTFE. The experiments were performed at air atmosphere and the processes progressed up to 8 hours. From measuring tensile strength and SEM(scanning electron microscopy) observation, we could know PTFE was anisotropic material due to the band structure. Crystallinity of raw and annealed PTFE was measured by DSC(differential scanning calorimetry). As a result, crystallinity of annealed PTFE decreased and tensile strength increased. Also, we could verify the relation between crystallinity and tensile strength of annealed PTFE was linear. Raw PTFE, however, dropped out from the linear relation. Finally, PTFE annealed at $350^{\circ}C$ for 6 hours showed the smallest crystallinity and the largest tensile strength.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.130-134
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• 2016

The influence of Au/Ni-based contact formed on a lightly-doped (7.3×1017cm−3, Zn-doped) InGaAsP layer for electrical compensation of surface plasmon polariton (SPP) propagation under various rapid thermal annealing (RTA) conditions has been studied. The active control of SPP propagation is realized by electrically pumping the InGaAsP multiple quantum wells (MQWs) beneath the metal planar waveguide. The metal planar film acts as the electric contact layer and SPP waveguide, simultaneously. The RTA process can lower the metal-semiconductor electric contact resistance. Nevertheless, it inevitably increases the contact interface morphological roughness, which is detrimental to SPP propagation. Based on this dilemma, in this work we focus on studying the influence of RTA conditions on electrical control of SPPs. The experimental results indicate that there is obvious degradation of electrical pumping compensation for SPP propagation loss in the devices annealed at 400℃ compared to those with no annealing treatment. With increasing annealing duration time, more significant degradation of the active performance is observed even under sufficient current injection. When the annealing temperature is set at 400℃ and the duration time approaches 60s, the SPP propagation is nearly no longer supported as the waveguide surface morphology is severely changed. It seems that eutectic mixture stemming from the RTA process significantly increases the metal film roughness and interferes with the SPP signal propagation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.227-231
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• 2008

In this study, in order to improve the electrical properties of low temperature sintering piezoelectric ceramics, $[0.05Pb(Zn_{1/2}W_{1/2})-0.07Pb(Mn_{1/3}Nb_{2/3})-0.088Pb(Zr_{0.48}Ti_{0.52})]O_3$(abbreviated as PZW-PMN-PZT) ceramic systems were fabricated using $Bi_2O_3$, CuO and $Li_2CO_3$ as sintering aids and then their piezoelectric and dielectric properties were investigated according to the amount of $Li_2CO_3$ and post-annealing process. Post-annealing process enhanced all physical properties except for mechanical quality factor (Qm). 0.2 wt% $Li_2CO_3$ added and post-annealed specimen showed the excellent values suitable for low loss piezoelectric actuator application as follow: the density = 7.86 $g/cm^3$ electromechanical coupling factor (kp) = 0.575, piezoelectric constant $d_{33}$ = 370 pC/N, dielectric constant ($\varepsilon_r$) = 1546, and mechanical quality factor (Qm) = 1161, respectively.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.1
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• pp.81-88
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• 2020

In this paper, the performances of the electrical characteristics of the Fused Deposition Modeling (FDM) 3D-printed flexible resistance sensor was evaluated. The FDM 3D printing flexible resistive sensor is composed of flexible-material thermoplastic polyurethane and a conductive PLA (carbon black conductive polylactic acid) polymer. While 3D printing, polymer filaments heat up quickly before being extruded and cooled down quickly. Polymers have poor thermal conductivity so the heating and cooling causes unevenness, which then results in internal stress on the printed parts due to the rapidity of the heating and cooling. Electrical resistance measurements show that the 3D-printed flexible sensor is unstable due to internal stress, so the 3D-printed flexible sensor resistance curve does not match the increases and decreases in the displacement curve. Therefore, annealing was performed to eliminate the mismatch between electrical resistance and displacement. Annealing eliminates residual stress on the sensor, so the electrical resistance of the sensor increases and decreases in proportion to displacement. Additionally, the resistance is lowered in comparison to before annealing. The results of this study will be very useful for the fabrication of various devices that employ 3D-printed flexible sensor that have multiple degrees of freedom and are not limited by size and shape.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.82-89
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• 2013

$Cu_2ZnSnS_4$ thin film have been fabricated by rapid thermal annealing of dc-sputtered metal precursor with Cu/ZnSn/Cu stack in sulfur ambient. A CZTS film with a good uniformity was formed at $560^{\circ}C$ in 6 min. $Cu_2SnS_3$ and $Cu_3SnS_4$ secondary phases were present at $540^{\circ}C$ and a trace amount of $Cu_2SnS_3$ secondary phase was present at $560^{\circ}C$. Single-phase large-grained CZTS film with rough surface was formed at $560^{\circ}C$. Solar cell with best efficiency of 4.7% ($V_{oc}=632mV$, $j_{sc}=15.8mA/cm^2$, FF = 47.13%) for an area of $0.44cm^2$ was obtained for the CZTS absorber grown at $560^{\circ}C$ for 6 min. The existence of second phase at lower-temperature annealing and rough surface at higher-temperature annealing caused the degradation of cell performance. Also poor back contact by void formation deteriorated cell performance. The fill factor was below 0.5; it should be increased by minimizing voids at the CZTS/Mo interface. Our results suggest that CZTS absorbers can be grown by rapid thermal annealing of metallic precursors in sulfur ambient for short process times ranging in minutes.