• Journal of IKEEE
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• v.27 no.1
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• pp.25-29
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• 2023

Effect of the processes of polysilazane solid electrolyte layer and silver (Ag) active electrode on the electrical characteristics of memristor was investigated. The memristor with the solid electrolyte annealed at higher temperature exhibited the higher set voltage and better memory retention characteristics than that annealed at lower temperature. The increase in the set voltage and the improvement of the memory retention characteristic at high annealing temperature were attributed to a reduction in the void density and an increase in the void uniformity inside the solid electrolyte, respectively. In the case where the polysilazane solution's concentration is high, the memristor exhibited rapid degradation of low resistive state even annealed at high temperature. Lastly, it was shown that the memristor with the solution-processed Ag active electrode showed WORM property unlike that with the vacuum-processed Ag active electrode. The WORM property was possibly due to morphological defects present in the solution-processed Ag active electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.233-240
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• 2023

p-type Tunnel Oxide Passivating Contacts (TOPCon) solar cell is fabricated with a poly-Si/SiO_x structure. It simultaneously achieves surface passivation and enhances the carriers' selective collection, which is a promising technology for conventional solar cells. The quality of passivation is depended on the quality of the tunnel oxide layer at the interface with the c-Si wafer, which is affected by the bond of SiO formed during the subsequent annealing process. The highest cell efficiency reported to date for the laboratory scale has increased to 26.1%, fabricated by the Institute for Solar Energy Research. The cells used a p-type float zone silicon with an interdigitated back contact (IBC) structure that fabricates poly-Si and SiO_x layer achieves the highest implied open-circuit voltage (iV_oc) is 750 mV, and the highest level of edge passivation is 40%. This review presents an overview of p-type TOPCon technologies, including the ultra-thin silicon oxide layer (SiO_x) and poly-silicon layer (poly-Si), as well as the advancement of the SiO_x and poly-Si layers. Subsequently, the limitations of improving efficiency are discussed in detail. Consequently, it is expected to provide a basis for the simplification of industrial mass production.

• Corrosion Science and Technology
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• v.22 no.5
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• pp.359-367
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• 2023

The localized corrosion resistance of the Ni-based Inconel 718 alloy after solution heat treatment was evaluated using electrochemical techniques in a solution of 25 wt% NaCl and 0.5 wt% acetic acid. Solution heat treatment at 1050 ℃ for 2.5 hours resulted in an increased average grain diameter. Both Ti carbides (10 ㎛ diameter) and Nb-Mo carbides (1 - 9 ㎛ diameter) were distributed throughout the material. Despite heat treatment, the shape and composition of these carbides remained consistent. An increase in solution temperature led to a decrease in pitting potential value. However, the pitting potential value of solution heat-treated Inconel 718 was consistently higher than that of as-received Inconel 718 at all tested temperatures. Localized corrosion initiation occurred at 0.4 V_SSE in a temperature environment of 80 ℃ for both as-received and solution heat-treated Inconel 718 alloys. X-ray photoelectron spectroscopic analysis indicated that the composition of the passive film formed on specimen surfaces remained largely unchanged after solution heat treatment, with O1s, Cr2p_3/2, Fe2p_3/2, and Ni2p_3/2 present. The difference in localized corrosion resistance between as-received and solution heat-treated Inconel 718 alloys was attributable to microstructural changes induced by the heat treatment process.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.67-70
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• 2008

$Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) fabricated by sol-gel and vacuum sealed annealing process. $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) have been studied by x-ray diffraction(XRD), vibrating sample magnetometer, and $M\ddot{o}ssbauer$ spectroscopy. The crystal structures were found to be a cubic garnet structure with space group Ia3d. The determined lattice constants $a_0$ of x = 0, and 1 are $12.497\AA$, and $12.465\AA$, respectively. The distribution of gallium and iron in $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$ is studied by Rietveld refinement. Based on Rietveld refinement results, the terbium and bismuth ions occupy the 24c site, iron ions occupy the 24d, l6a site, and nonmagmetic gallium ions occupy the 16a site. In order to verify the magnetic site occupancy of iron and gallium, we have taken $M\ddot{o}ssbauer$ spectra for $Tb_2Bi_1Ga_xFe_{5-x}O_{12}$(x=0, 1) at room temperature. From the results of $M\ddot{o}ssbauer$ spectra analysis, the absorption area ratios of Fe ions for $Tb_2Bi_1Fe_5O_{12}$ on 24d and 16a sites are 60.8 % and 39.2 %, respectively, and the absorption area ratios of Fe ions for $Tb_2Bi_1Fe_5O_{12}$ on 24d and 16a sites are 74.7 % and 25.3 %, respectively. It is noticeable that all of the nonmagnetic Ga atoms occupy the 16a site by vacuum annealing process.

• Korean Journal of Heritage: History & Science
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• v.49 no.2
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• pp.172-189
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• 2016

In this research, literature research on the Odong material, mixture ratio, casting method and casting facility was conducted on contemporary documents, such as Cheongong Geamul. Also, a long sword was produced using the Odong inlay technique. The sword reproduction steps were as follows; Odong alloying, silver soldering alloying, Odong plate and Silver plate production, hilt and sheath production, metal frame and decorative elements, such as a Dugup (metal frame), production, Odong inlay assembly and final assembly. For the Odong alloy production, the mixture ratio of the true Odong, which has copper and gold ratio of 20:1, was used. This is traditional ratio for high quality product according to $17^{th}$ century metallurgy instruction manual. The silver soldering alloy was produced with silver and brass(Cu 7 : Zn 3) ratio of 5:1 for inlay purpose and 5:2 ratio for simple welding purpose. The true Odong alloy laminated with silver plate was used to produce hilt and sheath. The alloy went through annealing and forging steps to make it into 0.6 mm thick plate and its backing layer, which is a silver plate, had the matching thickness. After the two plates were adhered, the laminated plate went through annealing, forging, engraving, silver inlaying, shaping, silver welding, finishing and polishing steps. During the Odong colouring process, its red surface turns black by induced corrosion and different hues can be achieved depending on its quality. To accomplish the silver inlay Odong techniques, a Hanji saturated with thirty day old urine is wrapped around a hilt and sheath material, then it is left at warm room temperature for two to three hours. The Odong's surface will turn black when silver inlay remains unchanged. Various scientific analysis were conducted to study composition of recreated Odong panel, silver soldering, silver plate and the colouring agent on Odong's surface. The recreated Odong had average out at Cu 95.57 wt% Au 4.16wt% and Cu 98.04 wt% Au 1.95wt%, when documented ratio in the old record is Cu 95wt% and Au 5wt%. The recreated Odong was prone to surface breakage during manufacturing process unlike material made with composition ratio written in the old record. On the silver plate of the silver and Odong laminate, 100wt% Ag was detected and between the two layers Cu, Ag and Au were detected. This proves that the adhesion between the two layers was successfully achieved. The silver soldering had varied composition of Ag depending on the location. This shows uneven composition of the silver welding. A large quantities of S, that was not initially present, was detected on the surface of the black Odong. This indicates that presence of S has influence on Odong colour. Additional study on the chromaticity, additional chemical compounds and its restoration are needed for the further understanding of the origin of Odong colour. The result of Odong alloy testing and recreation, Odong silver inlay long sword production, scientific analysis of the Odong black colouring agent will form an important foundation of knowledge for conservation of Odong artifact.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.990-997
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• 1998

In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

• Journal of Korea Multimedia Society
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• v.14 no.3
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• pp.403-413
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• 2011

In this paper, we proposed a digital image watermarking technique using scrambled binary phase computer generated hologram in the discrete cosine transform(DCT) domain. For the embedding process of watermark. Using simulated annealing algorithm, we would generate a binary phase computer generated hologram(BPCGH) which can reconstruct hidden image perfectly instead of hidden image and encrypt it through the scramble operation. We multiply the encrypted watermark by the weight function and embed it into the DC coefficients in the DCT domain of host image and an inverse DCT is performed. For the extracting process of watermark, we compare the DC coefficients of watermarked image and original host image in the DCT domain and dividing it by the weight function and decrypt it using descramble operation. And we recover the hidden image by inverse Fourier transforming the decrypted watermark. Finally, we compute the correlation between the original hidden image and recovered hidden image to determine if a watermark exits in the host image. The proposed watermarking technique use the hologram information of hidden image which consist of binary values and scramble encryption technique so it is very secure and robust to the various external attacks such as compression, noises and cropping. We confirmed the advantages of the proposed watermarking technique through the computer simulations.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.27 no.5
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• pp.421-427
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• 2014

Most of the structure of the real world is influenced under dynamic loads. However, when structure analysis and the structural optimization is performed, it is assumed that the static load acts on structure. When considering the actual load of dynamic loads in order to take into account a variety of loads, computational resources and time becomes a big burden in terms of cost. However, considering only the simple static load condition is not preferable for structural safety. For this reason, a lot of studies have been conducted trying to compensate this trouble by applying weight factor or replacing dynamic load with the equivalent static load. In this study, structural optimization techniques for structures under dynamic loads is proposed by applying the equivalent static load. From previous study, after determining the positions of equivalent static load based on primary degrees of freedom, the equivalent static load is calculated through the optimization process. In this process, the equivalent static load optimization of previous research is complemented by adding constraints to avoid excessively large load extraction. In numerical examples, dynamic load is applied to the truss structure and the plate. Then, the reliability of the proposed optimization technique is verified by carrying out size optimization with the equivalent static load.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.23-34
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• 1992

In order to fabricate magnetoresistive sensor, Fe-Ni and Co-Ni alleys were evaporated on the slide glass and the silicon wafers. Saturation magnetic induction($B_{s}$), coercive field strength($H_{c}$) and magnetoresistance were measured for fabricated samples. The evaporated Fe-Ni thin films show that the saturation magnetic induction was 0.65 T, and coercive field strength was 0.379 A/cm, and this value was changed to 0.370 A/cm(//), 0.390 A/cm(${\bot}$), respectively after magnetic annealing. For the measurement of coercive field strength, magnetizing frequency of 1 kHz was used. For the fabricated sensor element, the change of magnetoresistance (${\Delta}R/R$) was excessively unstable due to oxidation in the process of fabrication. The evaporated Co-Ni alloy thin films show that saturation magnetic induction was 0.66 T, and coercive field strengthes were 5.895 A/cm(//), 5.898 A/cm(${\bot}$), respectively, after magnetic annelaing. The change of magnetoresistance(${\Delta}R/R$) was $3.6{\sim}3.7%$ of which value was excessively stable to room temperature. Fe-Ni thin film could have many problems due to large affinity in the process of fabrication of magnetoresistance sensor, but Co-Ni thin film could be a suitable material for fabrication of magnetoresistance sensor, because of its small affinity and definite magnetoresistance effects.