• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.132-135
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• 2002

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field($H_{k}$) as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C$ respectively for 2 hours. Magnetic properties of film are measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range 1 MHz to 750MHz. And, it was examined on the permeability and impedance to design the MI sensor which acts at 50MHz by thickening a CoZrNb film relatively, and fabricated the MI sensor which acts at the 50MHz.

• Korean Journal of Crystallography
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• v.15 no.2
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• pp.104-109
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• 2004

The mechanical synthesis of thermoelectric material $FeSi_2$ by planetary ball mill has been investigated. The homogeneous and amorphous mixture of Fe-Si has been obtained by mechanical alloying for 850 rpm-40 min. The $\beta-FeSi_2$ powder could be synthesized by 1123 K-3 hr annealing heat treatment after mechanical alloying for 850 rpm-10, 20, and 40 min. The ceramic samples doped with the maximum content up to $10\;at.\;\%$ Co have exhibited semiconduction phenomena and maximum thermoelectric powder at 440K.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.743-747
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• 1995

The relationship between the variation of crystallinity and the resultant self-bonding strength of PEEK was examined by using DSC in conjunction with the shear test. DSC measurement of the crystallinity produced at different bonding conditions demonstrated that even though PEEK specimens contain the same amount of crystallinity, the resultant self-bonding strength is sensitively dependent on bonding history. It also showed that all crystallization during the bending process occurs only in the healing and annealing stage and no additional crystallization occurs in the cooling stage.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.195-195
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• 2010

$Ga_2O_3$ thin films have been grown on Si(001) substrates by metalorganic chemical vapor deposition (MOCVD) using dimethylgallium isopropoxide ($Me_2GaO^iPr$, DMGIP) with oxygen as the reactant gas. Suitability of the precursor for CVD was confirmed by thermogravimetric analysis (TGA) and vapor pressure measurement. Deposition was carried out in the substrate temperature range $450-650^{\circ}C$. Spectroscopic ellipsometry, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) and Rutherford back-scattering spectroscopy (RBS) were used to determine the thickness, crystallinity, and composition and stoichiometry of the films, respectively. From the slope of the Arrhenius plot in the temperature range $500-550^{\circ}C$, the activation energy of deposition was found to be $225.5\;kJ\;mol^{-1}$. As-deposited films were amorphous, but the monoclinic $\beta-Ga_2O_3$ phase was revealed after annealing the films in air at $1050^{\circ}C$. The XPS and RBS analyses indicate that the $Ga_2O_3$ films obtained by using DMGIP were found to be almost stoichiometric.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.231.2-231.2
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• 2014

훌륭한 전기적 특성을 갖는 ZnO 기반의 산화물 반도체 박막트랜지스터(TFT)는 AMOLEDs에 적용될 수 있다. 하지만 이러한 장점에도 불구하고 산화물 반도체 TFT소자에 전압이 인가되었을 때 문턱 전압이 이동하게 되는 안정성 문제를 갖는다. 따라서 이를 해결하기 위한 연구가 널리 진행 되고 있다. 본 연구소에서는 고압 분위기 열처리를 통해 안정성의 원인으로 작용할 수 있는 산소공공(Oxygen vacancy)을 감소시키는 연구를 진행하였다. 산화물 반도체 TFT소자의 안정성을 향상시키는 대표적인 분위기 열처리로는 산소 고압 열처리(HPA)가 있으며, 또한 H2O 기체를 사용한 열처리를 통해 TFT소자의 안정성을 높일 수 있다는 연구 결과가 보고된 바 있다. 본 연구에서는 IGZO TFT소자에 H2O보다 더 큰 반응성을 갖는 산화제인 H2O2 기체를 사용한 HPA를 통해 positive bias stress(PBS) 및 negative bias illumination stress(NBIS) 조건에서 안정성이 향상됨을 확인하였고 이를 H2O 기체를 사용한 경우와 비교하였다. 그 결과 H2O2 기체를 산화제로 사용할 때 기존 H2O 기체에 비해 효과적인 PBS 및 NBIS 신뢰성 개선을 확인하였다.

• Electrical & Electronic Materials
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• v.1 no.4
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• pp.319-332
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• 1988

높은 포화자속밀도와 낮은 철손을 갖는 Fe/aub 80/B$_{12}$Si$_{8}$ 비정질합금을 일반열처리, 자장열처리시켜 그의 자기적특성과 자구구조와의 관계를 조사하였다. 이를 위하여 Fe$_{80}$B$_{12}$Si$_{8}$ 비정질리본을 단롤법으로 제작하여 결정화온도를 측정하였으며 측정된 결정화온도 이하의 여러 온도에서 30분간 Ar-gas 분위기하에서 일반열처리, 자장열처리를 행하였다. 이와같이 하여 준비된 시료의 자기적특성을 조사하기 위하여 D.C., A.C. Recorking Fluxmeter를 이용하였으며 자구구조는 Bitter method로 관찰하였다. as-cast 상태의 시료를 일반열처리함에 따라 내부응력이 완화되면서 maze자구가 점차 사라지고 wave형태의 180.deg.자구가 관찰되었다. 동시에 자화과정에 있어서 자기이력곡선은 Barkhausen jump가 없어 smooth하였다. 그리고 자장열처리시에는 as-cast 상태나 일반열처리에 비해 자기적특성이 현저하게 향상되었으며 이는 열처리를 행함에 따라 내부응력이 완화되면서 maze 자구가 없어지고 일축자기 이방성으로 리본길이방향에 평행하게 형성된 180.deg.자구에 기인하는 것이라 사료된다. 그리고 자장열처리의 경우, 폭방향으로 열처리한 리본의 자구폭은 길이방향으로 열처리한 리본의 폭보다 미세하였으며 전자의 이력손실이 후자의 것보다 더 컸다.다.

• Journal of Powder Materials
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• v.28 no.4
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• pp.293-300
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• 2021

We investigate the effect of phosphorous content on the microstructure and magnetic properties of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) nanocrystalline soft magnetic alloys. The simultaneous addition of Cu and P to nanocrystalline alloys reportedly decreases the nanocrystalline size significantly, to 10-20 nm. In the P-containing nanocrystalline alloy, P atoms are distributed in an amorphous residual matrix, which suppresses grain growth, increases permeability, and decreases coercivity. In this study, nanocrystalline ribbons with a composition of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) are fabricated by rapid quenching melt-spinning and thermal annealing. It is demonstrated that the addition of a small amount of P to the alloy improves the glass-forming ability and increases the resistance to undesirable Fe_x(B,P) crystallization. Among the alloys investigated in this work, an Fe_83.2Si₅B₁₀P₁Cu_0.8 nanocrystalline ribbon annealed at 460℃ exhibits excellent soft-magnetic properties including low coercivity, low core loss, and high saturation magnetization. The uniform nanocrystallization of the Fe_83.2Si₅B₁₀P₁Cu_0.8 alloy is confirmed by high-resolution transmission electron microscopy analysis.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.7-11
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• 1994

Ferromagnetic resonance experiment was performed to study the variations of micromagnetic structure with heat treatment of melt spun $Fe_{76}Cu_{1}Nb_{3}Si_{14}B_{6}$ alloy for 1h at every $50^{\circ}C$ in the temperature range of $400^{\circ}C-700^{\circ}C$. The variations of micromagnetic structure was discussed qualitatively in terms of the variations of line width ${\Delta}H_{p-p}$ and resonance magnetic field $H_{res}$. With increasing armealing temperature to $400^{\circ}C$, ${\Delta}H_{p-p}$ decreases and $H_{res}$ increases due to the decrease in magnetic anisotropy resulting from structural relaxation during heat treatment. With increasing annealing temperature from 400 to $500^{\circ}C$, ${\Delta}H_{p-p}$ increases and $H_{res}$ decreases due to the increase in magnetic anisotropy resulting from the formation of nanocrystalline particles embedded in an amorphous matrix. With increasing armealing temperature from 500 to $550^{\circ}C$, ${\Delta}H_{p-p}$ decreases and $H_{res}$ increases due to the decrease in magnetic anisotropy resulting from the formation of homogeneous nanocrystalline structure with a minor amorphous phase. Further increase in armealing temperature above $550^{\circ}C$ C causes ${\Delta}H_{p-p}$ to increase and $H_{res}$ to decrease due to the increase in magnetic anisotropy due to the formation of inhomogeneous grain structure and intermetallic compounds.