• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.505-508
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• 1999

The effect of the heat treatment on electrochromic properties of $MoO_3$ thin films is investigated by studing optical modulation, optical density, response time, and cyclic voltammetry. From the results of XRD analysis, heat-treated at $450^{\circ}C$ in air for 1 hour $MoO_3$ thin films are found to be crystalline while as-deposited film and heat-treated at low temperature (${\leq}300^{\circ}C$) are amorphous. The electrochrornic devices using as-deposited $MoO_3$ films exhibits good electrochromic properties compare to those using the heat treated $MoO_3$ films. It has shown that the heat-treatment affected the stability and the electrochromic properties of $MoO_3$ films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.476-479
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• 2000

In this study, mesh-type PECVD system was suggested to minimize the hydrogen concentration. The main structural difference between the triode system and a conventional system is that a mesh was attached to the substrate holding electrode. We investigated several conditions to compare with conventional PECVD. The main effect of mesh was to minimize the substrate damage by ion bombardment and to enhance the surface reaction to induce hydrogen desorption. It was also found that hydrogen concentration decreased but deposition rate increased as increasing applied dias. Applied DC bias enhanced sputtering process. Intense ion bombardment causes the weakly bonded hydrogen or hydrogen-containing species to leave the growing film and increased adatom mobility. Furthermore, addition of hydrogen gas enhance the surface diffusion of adatom. The structural properties of poly-Si films were analyzed by scanning electron microscopy(SEM).

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.215-217
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• 2008

Crystallization behavior of the bulk metallic glass (BMG) during compression and tension was studied in the supercooled liquid region (SLR). Rod samples of the BMG alloy were produced by consolidating gas atomized powders of $Cu_{54}Zr_{22}Ti_{18}Ni_6$ using spark plasma sintering. The crystallization behavior in these samples was examined by tackling changes in thermal property during heating the samples in DSC. The present BMG alloy was firstly decomposed and then crystallized during annealing in the SLR. The phase decomposition from the original amorphous phase was retarded by the compressive stress, while it was accelerated by the tensile stress.

• Macromolecular Research
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• v.14 no.6
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• pp.588-595
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• 2006

The morphology, structure and melting behaviour of cold-crystallized isotactic polystyrene (iPS) were studied by differential scanning calorimetry (DSC), wide angle X-ray diffraction (WAXD) and small angle X-ray scattering (SAXS). The polymer was found to crystallize according to the dual-lamellar stack model. The two populations of lamellae, along with a melting-recrystallization phenomenon, determined the appearance of multiple melting peaks in DSC traces. The annealing peak was attributed to the relaxation of a rigid amorphous phase, rather than to the melting of crystalline material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.76-78
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• 2002

The influence of laser annealing on gaint magnetoimpedance effect of glass-covered Co-based amorphous microwires is investigated by illuminating pulse Nd:YAG laser on the etched microwires. The maxium GMI ratio reaches maximum of around 85 % at the frequency of 5 MHz for the sample iluminated by the pulse with laser energy fo 132 mJ/pulse.

• Journal of the Korean institute of surface engineering
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• v.30 no.3
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• pp.183-190
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• 1997

Fabrication and crystallization characteristics of yttria($T_2O_3$) stabilized zirconia(YSZ) thin film by sol-gel process were studied. YSZ sol was synthesized with zirconium n-propoxide($Zr(OC_3H_7)_4)$) and yttrium nitrate pentahydrate ($Y(NO_3)_3.5H_2O$). YSZ film was prepared by depositing the polymeric sol on porous $Al_2O_3$ substrate by spin-coating, and the film characteristics were investigated by FRIR, TG-DTA, XRD, DSC, optical microscopy and SEM. The film topology was uniform and cracks were not found. It was found that the annealing temperature and the concentration of stabilizer affect the crystallization of YSZ film. The YSZ film began to crystallize from amorphous to tetragonal phase at 40$0^{\circ}C$, and it was not converted to cubic structure until $1100^{\circ}C$. It seemed that the grains were formed over $700^{\circ}C$and the average grain size was obtained about 0.2$\mu\textrm{m}$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.51-52
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• 2006

[ $Ti_{45}Zr_{38}Ni_{17}$ ] powders were thermally sprayed onto mild steel substrates in air and under a reduced pressure of argon. Several oxides were formed after thermally-spraying the mechanically-alloyed powders in air. After spraying in a reduced pressure of argon, the coating layers obtained from the gently mixed powders consisted of the elemental metals, but an amorphous phase primarily appeared in the thermally-sprayed mechanically-alloyed powders, which transformed into the icosahedral quasicrystal phase and a minor $Ti_2Ni-type$ crystal phase after annealing at 828 K. The Vickers hardness and the contact angle with pure water for the quasicrystal layers were about 7 GPa and $92^{\circ}$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.20-22
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• 1997

In ours study, we investigated the various properties in Te-light doped $Sb_{85}$G $e_{15}$ thin films such as the change of reflectance and transmittance according to phase change from amorphous to crystalline states In all films the transmittance was decreased, but the reflectance was increased by annealing. Particularly, the reflectance between as- deposited state and annealed state showed the largest change in the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film at 780nm, which was about 40% in as-deposited state and about 70% in annealed state. Therefore, it might be considered that the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film is recording medium showing to a good optical properties if it is used to optical recording of the phase change type. change type.ype.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.430-431
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• 2006

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.475-479
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• 2000

The box capacitor structure with H5G-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a 0.482f${\mu}{\textrm}{m}$$^2$ for 128Mbit DRAM. An H5G-Si formation technology with seeding method, which employs Si$_2$H$_{6}$ molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled H5G-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.s.