• 제목/요약/키워드: Annealing atmosphere

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Annealing of Electrodeposited Cu(In,Ga)Se2 Thin Films Under Se Gas Atmosphere (전해증착 Cu(In,Ga)Se2 박막의 Se가스 분위기 열처리)

  • Shin, Su-Jung;Kim, Myung-Han
    • Korean Journal of Materials Research
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    • v.21 no.8
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    • pp.461-467
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    • 2011
  • Cu(In, Ga)$Se_2$ (CIGS) precursor films were electrodeposited on Mo/glass substrates in acidic solutions containing $Cu^{2+}$, $In^{3+}$, $Ga^{3+}$, and $Se^{4+}$ ions at -0.6 V (SCE) and pH. 1.8. In order to induce recrystallization, the electrodeposited $Cu_{1.00}In_{0.81}Ga_{0.09}Se_{2.08}$ (25.0 at.% Cu + 20.2 at.% In + 2.2 at.% Ga + 52.0 at.% Se) precursor films were annealed under a high Se gas atmosphere for 15, 30, 45, and 60 min, respectively, at $500^{\circ}C$. The Se amount in the film increased from 52 at.% to 62 at.%, whereas the In amount in the film decreased from 20.8 at.% to 9.1 at.% as the annealing time increased from 0 (asdeposited state) to 60 min. These results were attributed to the Se introduced from the furnace atmosphere and reacted with the In present in the precursor films, resulting in the formation of the volatile $In_2Se$. CIGS precursor grains with a cauliflower shape grew as larger grains with the $CuSe_2$ and/or $Cu_{2-x}Se$ faceted phases as the annealing times increased. These faceted phases resulted in rough surface morphologies of the CIGS films. Furthermore, the CIGS layers were not dense because the empty spaces between the grains were not removed via annealing. Uniform thicknesses of the $MoSe_2$ layers occurred at the 45 and 60 min annealing time. This implies that there was a stable reaction between the Mo back electrode and the Se diffused through the CIGS film. The results obtained in the present research were sufficiently different from comparable studies where the recrystallization annealing was performed under an atmosphere of Ar gas only or a low Se gas pressure.

Synthesis of $\beta$-$Ga_2$$O_3 Nanobelts and Nanoparticles from Mechanically Ground GaN Powders with Different Thermal Annealing Atmospheres (기계적으로 연마한 GaN 분말로부터 열처리 분위기를 달리한 $\beta$-$Ga_2$$O_3 나노벨트 및 나노입자의 합성)

  • Kim, Byung-Cheul;Sun, Kyu-Tae;Park, Kwang-Soo;Im, Ki-Joo;Noh, Tae-Yong;Nahm, Sahn;Sung, Man-Young;Kim, Sang-Sig
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.965-971
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    • 2001
  • $\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles were synthesized from mechanically ground GaN powders with thermal annealing in a nitrogen atmosphere and an oxygen atmosphere, respectively. The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts synthesized in the nitrogen atmosphere are with the range of 20~1000nm width and 10 ~100nm thickness, and that nanomaterials are nanoparticles with 20~50nm radius obtained by thermal annealing in an oxygen atmosphere. The crystal structure of the $\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles was in this study investigated by X-ray diffractometer (XRD) and high-resolution transmission electron microscope (HRTEM). The formation processes of the nanobelts and nanoparticles will be discussed in this paper.

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Comparison of Nitrogen and Oxygen Annealing Effects on the Structural, Optical and Electrical Properties of ALD-ZnO Thin Films (ALD법으로 증착한 ZnO 박막의 열처리 분위기에 따른 구조적, 전기적 특성 비교)

  • Park Y. K.;Park A. N.;Lee C. M.
    • Korean Journal of Materials Research
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    • v.15 no.8
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    • pp.514-517
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    • 2005
  • Effects of nitrogen and oxygen annealing on the carrier concentration, carrier mobility, electrical resistivity and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD), Scanning electron microscope (SEM), photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. Annealing undoped ZnO films grown by ALD at a high temperature above $600^{\circ}C$ improves the crystallinity and enhances W emission but deteriorates the electrical conductivity of the flms. The resistivity of the ZnO film annealed particularly at $800^[\circ}C$ in a nitrogen atmosphere is much higher than that annealed at the same temperature in an oxygen atmosphere.

The Annealing Characteristics of Chromiun Nitride Thin-Film Strain Gauges (크롬질화박막형 스트레인 게이지의 열처리 특성)

  • 서정환;박정도;김인규;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.692-695
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    • 1999
  • This paper presents annealing characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere)Ar-(5-~25%)$N_2$. The physical and electrical characteristics of these films investigated with the thickness range 3500$\AA$ of CrN thin films, annealing temperature (100~30$0^{\circ}C$) and annealing time (24-72hr) . The optimized condition of CrN thin-film strain gauges were thickness range of 3500$\AA$ and annealing condition(30$0^{\circ}C$ , 48hr) in Ar-10%$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, $\rho$=1147.65$\Omega$cm a low temperature coefficient of 11.17. And change in resistance after annealing for the CrN thin film were quitely linear and stable.

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Effects of Annealing Temperature and Atmosphere on Properties of Porous Silicon (열처리 온도 및 분위기에 따른 다공질 실리콘의 구조 및 광학적 특성)

  • Choi, Hyun-Young;Yim, Kwang-Gug;Jeon, Su-Min;Cho, Min-Young;Kim, Ghun-Sik;Kim, Min-Su;Lee, Dong-Yul;Kim, Jin-Soo;Kim, Jong-Su;Leem, Jae-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.8
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    • pp.581-586
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    • 2010
  • The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to $800^{\circ}C$. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of Si-N bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.

Effect of Annealed Oxides on the Formation of Inhibition Layer During Hot-Dip Galvanizing of 590Mpa Trip Steel

  • Kim, Seong-Hwan;Huh, Joo-Youl;Lee, Suk-Kyu;Park, Rho-Bum;Kim, Jong-Sang
    • Corrosion Science and Technology
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    • v.10 no.1
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    • pp.6-12
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    • 2011
  • The selective surface oxidation of a transformation-induced-plasticity (TRIP) steel containing 1.6 wt.% Mn and 1.5 wt.% Si during annealing at $800^{\circ}C$ was investigated for its influence on the formation of an inhibition layer during hot-dip galvanizing. The selective oxidation of the alloying elements and the oxide morphology were significantly influenced by the annealing atmosphere. The pure $N_{2}$ atmosphere with a dew point $-40^{\circ}C$ promoted the selective oxidation of Mn as a crystalline $Mn_{2}SiO_{4}$ phase, whereas the $N_{2}$ + 10% $H_{2}$ atmosphere with the same dew point $-40^{\circ}C$ promoted the selective oxidation of Si as an amorphous Si-rich oxide phase. During hot-dip galvanizing, the $Mn_{2}SiO_{4}$ phase was reduced more readily by Al in the Zn bath than the Si-rich oxide phase. Consequently, the pure $N_{2}$ atmosphere resulted in a higher formation rate of $Fe_{2}Al_{5}$ particles at the Zn/steel interface and better galvanizability than the $N_{2}$ + 10% $H_{2}$ atmosphere.

The effect of the process parameters on the electrical properties of Ni/Cr/Al/Cu alloy thin film (공정변수에 의한 Ni/Cr/Al/Cu계 박막의 전기적 특성)

  • 이붕주;박상무;박구범;박종관;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.725-728
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    • 2001
  • We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-l8wt%Cr-4wt%Al-4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films. In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400$^{\circ}C$ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300$^{\circ}C$ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film.

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Post-annealing of Al-doped ZnO films in hydrogen atmosphere (Al이 도핑된 투명전극용 ZnO 박막의 수소 열처리에 관한 특성연구)

  • Oh, Byeong-Yun;Jeong, Min-Chang;Lee, Woong;Myoung, Jae-Min
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05a
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    • pp.58-61
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    • 2005
  • In an effort to improve the electrical properties of ZnO:Al transparent electrode films, post-annealing treatment in hydrogen atmosphere was attempted with varying annealing time at 573 K for compatibility with typical display device fabrication processes. It was observed that carrier concentrations and mobilities increased with longer annealing time with small changes in crystallinity. This resulted in substantial decrease in resistivity from $4.80{\times}10^{-3}$ to $8.30{\times}10^{-4}{\Omega}cm$ due to increased carrier concentration. Such improvements in electrical properties are attributed to the passivation of the grain boundary surfaces. The optical properties of the films, which changed in accordance with the Burstein-Moss effect, were consistent with the observed changes in electrical properties.

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Preparation of tetragonal phase L10 FePt thin films with H2 annealing atmosphere (수소 분위기 중 열처리법을 이용한 고자기이방성 L10 FePt 박막 제작)

  • Kong, Sok-Hyun;Kim, Kyung-Hwan
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.343-347
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    • 2007
  • Fe thin films exhibited (100) preferential orientation when they were deposited at low deposition rate of $0.1{\AA}/s$ on glass substrates by using facing target sputtering system. The (100) oriented Fe layer induces (100) orientation of Pt layer deposited on it owing to hetero-epitaxial growth. After annealing at $600^{\circ}C$ in $H_2$ atmosphere, FePt films exhibited f.c.t. (001) texture in the whole film caused by inter-diffusion between atoms. We have also confirmed that the homogeneously inter-diffused compositional modulation in the film after the annealing process. Furthermore, annealing process in $Ar+H_2$ atmosphere at $400^{\circ}C$ during Pt deposition was effective for attaining Pt (100) texture. The annealing process during Pt deposition also induced in low annealing temperature and decreased annealing time for attaining the FePt f.c.t. (001) structure.

Color Evolution in Single Crystal Colored Cubic Zirconias With Annealing Atmosphere and Temperature

  • Song, Jeongho;Noh, Yunyoung;Song, Ohsung
    • Journal of the Korean Ceramic Society
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    • v.53 no.4
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    • pp.450-455
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    • 2016
  • Color change in single-crystal, yellow, red, purple, and colorless cubic zirconias (CZs) was investigated as a function of annealing in vacuum and air atmosphere at $800-1400^{\circ}C$ for 30 min, for development of a damascene process of plugging a precious metal paste at the elevated temperature. Coloring-element contents of the CZs were evaluated using WD-XRF, and the color change determined visually by naked eye, and using a digital camera and UV-Vis-NIR color analyzer. WD-XRF showed that all of the CZs had cubic-phase stabilizer elements and coloring elements. All CZs that underwent vacuum annealing exhibited a slight color change at $<900^{\circ}C$, while their colors began to change to black at $1100^{\circ}C$, and became opaque black at $1400^{\circ}C$. After air annealing, there was almost no color change up to $1400^{\circ}C$. Since red and purple CZs showed greater color difference (CD) values than the others, the degree of CD is likely to depend on the original color of the CZ due to the different stabilities of their coloring elements during annealing. Based on our results, it is suggested that annealing in air at $<900^{\circ}C$ is advantageous, and assorted colored CZs can be used for precious metal damascene.