• Journal of Welding and Joining
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• v.17 no.1
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• pp.133-144
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• 1999

To fine seam annealer capacity of through thickness seam annealing in terms of through thickness microstructure change with increased toughness and elongation leaving heat trace on it, high strength steel pipes of ERW with different thickness were tested in different seam annealing temperature measured on the outer surface of pipes. Annealing temperature and microstructure of the weld seam were changed through applied seam annealing condition. Toughness and tensile test with hardness and microstructure analysis were done on the annealed weld seam to fine its characteristics as a primary step and annealing characteristics according to different seam annealing condition. Through a study of annealed ERW weld seam characteristics and seam annealing technology, amount of electric power should apply in decreased manner to arranged inductors of annealer in the order of 1st, 2nd, 3rd, so on for proper seam annealing. For example of 15.4mm thick and 610mm outside diameter pipe, applied power for proper seam annealing is 600 -650kw at 1st inductor, 450 - 500kw at 2nd inductor, 200-250 kw at 3rd inductor of annealer during 10 - 12M/minute moving speed of pipe. Also, the penetration depth of heat trace along the thickness direction of weld during seam annealing can be estimated through the equation 17mm/kv$\times$voltage(kv) with the microstructure and hardness analysis of thick weld seam as well as study of seam annealing and comparison of cooling condition to CCT diagram of low carbon high strength steel. From this result, the difference between the technological applicability of full annealing condition based on phase diagram and full penetration of heat trace based on CCT diagram along the thickness of weld seam is discussed.

• Journal of Software Engineering Society
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• v.24 no.2
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• pp.35-45
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• 2011

Simulated annealing has been studied a long times. And it is one of the effective techniques for test data generation. But basic SA methods showed bad performance because of neighborhood selection strategies in the case of large input domain. To overcome this limitation, we propose new neighborhood selection approach, Branch Distance. We performs case studies based on the proposed approach to evaluate it's performance and to compare it whit basic SA and Random test generation. The results of the case studies appear that proposed approach show better performance than the other approach.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.371-372
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• 2012

• Journal of the Korean Operations Research and Management Science Society
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• v.20 no.1
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• pp.63-81
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• 1995

This paper presents a model and algorithm for solving the multi-factor plant layout problem. The model can incorporate more than two factors that may be either quantitative or qualitative. The algorithm is based on simulated annealing, which has been successfully applied for the solution of combinatorial problems. A set of problems previously used by various authors is solved to demonstrate the effectiveness of the proposed methods. The results indicate that the proposed methods can yield good quality for each of eleven test problems.

• Journal of KIISE
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• v.43 no.4
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• pp.480-488
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• 2016

Search-Based Software Testing (SBST) is an effective technique for test data generation on large domain size. Although the performance of SBST seems to be affected by the structural characteristics of Software Under Test (SUT), studies for the comparison of SBST techniques considering structural characteristics are rare. In addition to the comparison study for SBST, we analyzed the best algorithm with different structural characteristics of SUT. For the generalization of experimental results, we automatically generated 19,800 SUTs by combining four metrics, which are expected to affect the performance of SBST. According to the experiment results, Genetic algorithm showed the best performance for SUTs with high complexity and test data evaluation with count ${\leq}20,000$. On the other hand, the genetic simulated annealing and the simulated annealing showed relatively better performance for SUTs with high complexity and test data evaluation with count ${\geq}50,000$. Genetic simulated annealing, simulated annealing and hill climbing showed better performance for SUTs with low complexity.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.44-49
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• 2020

The effect of intercritical annealing temperature on the microstructure and mechanical properties of Fe-9Mn-0.2C-3Al-0.5Si medium manganese steels containing Cu and Ni is investigated in this study. Six kinds of medium manganese steels are fabricated by varying the chemical composition and intercritical annealing temperature. Hardness and tensile tests are performed to examine the correlation of microstructure and mechanical properties for the intercritical annealed medium manganese steels containing Cu and Ni. The microstructures of all the steels are composed mostly of lath ferrite, reverted austenite and cementite, regardless of annealing temperature. The room-temperature tensile test results show that the yield and tensile strengths decrease with increasing intercritical annealing temperature due to higher volume fraction and larger thickness of reverted austenite. On the other hand, total and uniform elongations, and strain hardening exponent increase due to higher dislocation density because transformation-induced plasticity is promoted with increasing annealing temperature by reduction in reverted austenite stability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.796-803
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• 1998

Intrinsic and proximity gettering are popular processes to get higher cumulative production yield and usually adopt multi-step annealing and high energy ion implantation, respectively. In order to test the combined processed of these, high energy \ulcornerAs\ulcorner ion implantation and 2-step annealing process were adopted. After the ion implantation followed by 2-step annealing, the wafers were cleaved and etched with Wright etchant. The morphology of cross section on samples was inspected by FESEM. The concentration profile of As was measured by SRP. The location and type of secondary defects inspected by HRTEM were dependent on the 1st annealing temperatures. That is, a line of dislocation located at $1.5mutextrm{m}$ apart from the surface at $600^{\circ}C$ lst annealing was changed to some dislocation lines or loops nearby the surface at 100$0^{\circ}C$. The density of dislocation line was reduced but the size of the defects was enlarged as the temperature increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.264-268
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• 2022

High pressure deuterium (HPD) annealing is an advancing technology for the fabrication of modern semiconductor devices. In this work, gate-enclosed FETs are fabricated on a silicon substrate as test vehicles. After a cycle for the HPD annealing, the device parameters such as threshold voltage (V_TH), subthreshold swing (SS), on-state current (I_ON), off-state current (I_OFF), and gate leakage (I_G) were measured and compared depending on the HPD. The HPD annealing can passivate the dangling bonds at Si-SiO₂ interfaces as well as eliminate the bulk trap in SiO₂. It can be concluded that adding the HPD annealing as a fabrication process is very effective in improving device reliability, performance, and variability.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.3
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• pp.115-120
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• 2023

ZnO/Cu/ZnO (ZCZ) thin film deposited on the glass substrate with DC and RF magnetron sputtering was rapid thermal annealed (RTA) and then effect of thermal temperature on the opto-electical and transparent heater properties of the films were considered. The visible transmittance and electrical resistivity are depends on the annealing temperature. The electrical resistivity decreased from 1.68 × 10^-3 Ωcm to 1.18 × 10^-3 Ωcm and the films annealed at 400℃ show a higher transmittance of 78.5%. In a heat radiation test, when a bias voltage of 20 V is applied to the ZCZ film annealed at 400℃, its steady state temperature is about 70.7℃. In a repetition test, the steady state temperature is reached within 15s for all of the bias voltages.

• Korean Chemical Engineering Research
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• v.60 no.1
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• pp.7-11
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• 2022

In the membrane forming process of a proton exchange membrane fuel cell (PEMFC), drying and annealing heat treatment processes are required for performance and durability. In this study, the optimal annealing temperature for improving the durability of the polymer membrane was studied. It was annealed in the temperature range of 125~175 ℃, and thermal stability and hydrogen permeability were measured as basic data of durability at each annealing temperature. The electrochemical durability was analyzed by Fenton reaction and open circuit voltage (OCV) holding. The annealing temperature of 165 ℃ was the optimal temperature in terms of thermal stability and hydrogen permeability. In the Fenton reaction, the fluorine emission rate of the membrane annealed at 165 ℃ was the lowest, and the lifespan of the membrane annealed at 165 ℃ was the longest in the OCV holding experiment, confirming that 165 ℃ was the optimal temperature for the durability of the polymer membrane.