• Applied Microscopy
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• 제45권3호
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• pp.115-118
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• 2015

In this review paper, I'd like to introduce the basics of angle-resolved photoemission spectroscopy (ARPES) and some of my results taken at the Pohang Accelerator Laboratory (PAL), the only synchrotron radiation in South Korea. The results show that ARPES is very useful, in particular, for studying two-dimensional materials. It looks like a microscope in momentum space similar to transmission electron microscope imaging atoms in real space.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.82-82
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• 2012

Angle-resolved photoemission spectroscopy (ARPES) is a powerful tool to investigate the electronic structure of a single-crystalline solid. After the development of a two-dimensional electron detector, it became a basic experimental method in solid state physics comparable to other powerful tools such as x-ray and neutron scatterings. In this tutorial, I talk briefly on the basic principle of ARPES and its recent and future direction of development.

• 한국자기학회지
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• 제22권6호
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• pp.228-233
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• 2012

한 고체의 자성은 원자가 전자의 양자역학적 상태에 의해 결정되는데, 스핀편극 각도분해 광전자 분광학(SP-ARPES)은 고체안의 전자상태를 조사할 수 있는 가장 강력한 방법으로 어떤 물질의 자성을 이해하는 데에 많은 도움을 준다. 본고에서는 SP-ARPES 방법에 대한 간락한 소개와 이를 통해 얻을 수 있는 물리적 정보에 대해 기술한다.

• 한국초전도ㆍ저온공학회논문지
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• 제16권2호
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• pp.7-19
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• 2014

Since the discovery of iron-based superconductors in 2008, extensive and intensive studies have been performed to find the microscopic theory for the high temperature superconductivity in the materials. Electronic structure is the basic and essential information that is needed for the microscopic theory. Experimentally, angle resolved photoelectron spectroscopy (ARPES) is the most direct tool to obtain the electronic structure information, and therefore has played a vital role in the research. In this review, we review what has been done so far and what is needed to be done in ARPES studies of iron-based superconductors in search of the microscopic theory. This review covers issues on the band structure, orbital order/fluctuation, and gap structure/symmetries as well as some of the theories.

• 진공이야기
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• 제5권2호
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• pp.10-17
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• 2018

Chalcogenide and oxide heterostructures have been studied as a next-generation electronic materials, due to their interesting electronic properties, such as direct bandgap semiconductor, ferroelectricity, ferromagnetism, superconductivity, charge-density waves, and metal-insulator transition, and their modification near heterointerfaces, so called, electronic reconstruction. An angle-resolved photoemission spectroscopy (ARPES) is a powerful technique to unveil such novel electronic phases in detail, especially combined with high quality thin film preparation methods, such as, molecular beam epitaxy and pulsed laser deposition. In this article, the recent ARPES results in chalcogenide and oxide thin films will be introduced.

• 한국진공학회지
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• 제6권3호
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• pp.177-180
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• 1997

Angle Resolved Ultraviolet Photoemission Spectroscopy(ARUPS) 연구를 위한 표면 구조 확인과 표면 방향 결정을 위한 LEED를 제작하여 그 성능을 조사하였다. 컴퓨터 시뮬 레이션을 이용하여 제작에 필요한 요인들을 최적의 값으로 결정하였다. 제작된 LEED는 3Grid방식을 채택하였고 시료와 스크린 사이의 거리를 75mm, 투영 각도를 $80^{\circ}$로 하였다. 전자총은 TVgun을 사용하였고 이 Gun의 특성을 조사하였다. 완성된 LEED의 성능조사를 위하여 Si(001), $Al_2O_3$(0001)표면의 pattern을 분석하였다.

• 진공이야기
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• 제3권4호
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• pp.19-23
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• 2016

Angle resolved photoemission spectroscopy (ARPES) is a powerful technique which can directly visualize the electronic structure of solid in detail including many-body interaction information. However, ARPES has a certain limitation in applying control parameters such as doping or pressure, which helps to dig out the clue to understand the desired phenomena or the target system. During ARPES experiment, the control parameter is the temperature only. Other parameters especially electric- and magnetic- field cannot be applied. Recently introduced surface-electron doping technique highlights new avenue to overcome such limitation. In this article, starting from introducing basic concepts of ARPES and its current status, the power of new technique will be demonstrated when it is combined to ARPES by introducing recent results on iron based superconductors.

• 한국진공학회지
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• 제1권1호
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• pp.83-87
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• 1992

최근 Angle Resolved Ultraviolet Photoemission Spectroscopy(ARUPS)를 통하여 Mo(011)과 W(011)의 surface Fermi contour에 관한 연구가 발표되었다. Hydrogen 흡착시 W(011)의 electron contour는 팽창하였다. 이것은 electron contour를 이루는 surface state가 hydrogen 흡착시 higher binding energy로 이동한 결과이다. Surface state의 higher binding energy로의 이동은 결국 band flattening으로 이해되며, 이 band flattening 에 S.E.Trullinger의 long range dipole dipole force와 Kohn anomaly 현상을 부합시켜 W(011) surface에 수소 흡착시 일어나는 reconstruction 현상에 대한 설명을 시도해 보았다.

• 한국초전도ㆍ저온공학회논문지
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• 제18권2호
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• pp.14-17
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• 2016

Annealing as-grown electron-doped cuprates under a low oxygen-partial-pressure condition is a necessary step to achieve superconductivity. It has been recently found that the so-called protect annealing results in much better superconducting properties in terms of the superconducting transition temperature and volume fraction. In this article, we report on angle-resolved photoemission spectroscopy studies of a protect-annealed electron-doped cuprate $Pr_{0.9}La_{1.0}Ce_{0.1}CuO_4$ on annealing condition dependent superconducting and pseudo-gap properties. Remarkably, we found that the one showing a better superconducting property possesses almost no pseudo-gap while others have strong pseudo-gap feature due to an anti-ferromagnetic order.

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.90-94
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• 2018

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.