• Journal of the Korean Society for Precision Engineering
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• v.23 no.6 s.183
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• pp.119-127
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• 2006

A non-destructive time domain approach to examine structural damage using parameterized partial differential equations and Galerkin approximation techniques is presented. The time domain analysis for damage detection is independent of modal parameters and analytical models unlike frequency domain methods which generally rely on analytical models. The time history of the vibration response of the structure was used to identify the presence of damage. Damage in a structure causes changes in the physical coefficients of mass density, elastic modulus and damping coefficients. This is a part of our ongoing effort on the general problem of modeling and parameter estimation for internal damping mechanisms in a composite beam. Namely, in detecting damage through time-domain or frequency-domain data from smart sensors, the common damages are changed in modal properties such as natural frequencies, mode shapes, and mode shape curvature. This paper examines the use of beam-like structures with piezoceramic sensors and actuators to perform identification of those physical parameters, and detect the damage. Experimental results are presented from tests on cantilevered composite beams damaged at different locations and different dimensions. It is demonstrated that the method can sense the presence of damage and obtain the position of a damage.

• Journal of the Korean Society of Safety
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• v.27 no.4
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• pp.43-49
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• 2012

In the design of high speed railway bridges is important a impact factor as a tool of assessing the dynamic capacitys of bridges. However, the impact factor(or dynamic amplification factor, DAF) of high speed railway bridges may essentially be changeable because the dynamic response is affected by the long train length(380 m), number of axles and high speed velocity(300 km/h)(Korea Train eXpress: KTX). Therefore, on this study will be examined the dynamic capacity and stability of the typical PSC Box Girder of high speed railway bridge. At first, the static/dynamic analysis is performed considering the axle load line of KTX based upon existing references. Additionally, the KTX moving load is transformed into the dynamic time series load for conducting various parameter studies like axle length, analytical time increment, velocity of KTX. The time history analysis is repeatedly performed to get maximum dynamic responce by varying axle load length, analytical time increment, velocity of KTX. The study shows that dynamic analysis has resonable results with optimal axle load length(0.6 m) and time increment(0.01 sec.) and maximum DAF and dynamic resonance happens at 270 km/h velocity of KTX.

• Analytical Science and Technology
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• v.5 no.1
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• pp.111-114
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• 1992

Ordering phenomena were observed for Zn and Ta cations of $Ba(Zn_{1/3}Ta_{2/3})O_3$ under particular heat treatments, followed by a considerable lattice distortion. This lattice distortion was measured by X-ray powder diffraction with a precision of higher than 1/10,000. From this investigation, a significant lattice distortion occurred within 30 min. of sintering at $1350^{\circ}C$, and it was increased with sintering time.

• Structural Engineering and Mechanics
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• v.44 no.5
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• pp.681-704
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• 2012

The dynamic response of Euler-Bernoulli beams to resonant harmonic moving loads is analysed. The non-dimensional form of the motion equation of a beam crossed by a moving harmonic load is solved through a perturbation technique based on a two-scale temporal expansion, which permits a straightforward interpretation of the analytical solution. The dynamic response is expressed through a harmonic function slowly modulated in time, and the maximum dynamic response is identified with the maximum of the slow-varying amplitude. In case of ideal Euler-Bernoulli beams with elastic rotational springs at the support points, starting from analytical expressions for eigenfunctions, closed form solutions for the time-history of the dynamic response and for its maximum value are provided. Two dynamic factors are discussed: the Dynamic Amplification Factor, function of the non-dimensional speed parameter and of the structural damping ratio, and the Transition Deamplification Factor, function of the sole ratio between the two non-dimensional parameters. The influence of the involved parameters on the dynamic amplification is discussed within a general framework. The proposed procedure appears effective also in assessing the maximum response of real bridges characterized by numerically-estimated mode shapes, without requiring burdensome step-by-step dynamic analyses.

• Analytical Science and Technology
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• v.13 no.3
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• pp.269-276
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• 2000

Chromatographic retention mechanism of seven benzoic acids in RPLC were investigated. Inorganic salt is pertinent for the measurement of dead time in benzoic acid. Logarthims of capacity factor (log k') and Hildebrand solubility parameter (${\delta}$) showed proportional relationship which imply the hydrophobic effect of the retention mechanism in RPLC. Enthalpies of solute transfer showed inverse proportion to temperature and organic modifier ratio of the mobile phase. It was found that the S value showed positive slope in plot of log k' vs. volume fraction of water in mobile phase. Free energy change increases with increasing organic volume fraction. The hydrophobicity index, ${\varphi}_0$(organic volume fraction) is inversely proportional to column temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.17-23
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• 2010

In this paper, a new analytical model for deriving the threshold voltage of a short-channel bulk-type MOSFET is suggested. Using the Fourier coefficient method, the Laplace equation in the oxide region and the Poisson equation in the depleted silicon region have been solved two-dimensionally. Making use of them, the minimum surface potential is derived to describe the threshold voltage. Simulation results show good agreement with the dependencies of the threshold voltage on the various device parameters and applied bias voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.1-7
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• 2009

In this paper, a simple analytical model for deriving the threshold voltage of a short-channel intrinsic-body SDG SOI MOSFET is suggested. Using the iteration method, both Laplace equations in intrinsic silicon body and gate oxide are solved two-dimensionally. Obtained potential distributions in both regions are expressed in terms of fourth and fifth-order of the coordinate perpendicular to the silicon channel direction. Making use of them, the surface potential is obtained to derive the threshold voltage in a closed-form. Simulation results show the fairly accurate dependencies of the threshold voltage on the various device parameters and applied bias voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.9-16
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• 2008

In this paper, a simple analytical model for deriving the threshold voltage of a short-gate SOI MESFET is suggested. Using the iteration method, the Poisson equation in the fully depleted silicon channel and the Laplace equation in the buried oxide region are solved two-dimensionally, Obtained potential distributions in each region are expressed in terms of fifth-order of $\chi$, where $\chi$ denotes the coordinate perpendicular to the silicon channel direction. From them, the bottom channel potential is used to describe the threshold voltage in a closed-form. Simulation results show the dependencies of the threshold voltage on the various device geometry parameters and applied bias voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.54-61
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• 2011

In this paper, a simple analytical model for deriving the I-V characteristics of a cylindrical surrounding gate SOI MOSFET with intrinsic silicon core is suggested. The Poisson equation in the intrinsic silicon core and the Laplace equation in the gate oxide layer are solved analytically. The surface potentials at both source and drain ends are obtained by means of the bisection method. From them, the surface potential distribution is used to describe the I-V characteristics in a closed-form. Simulation results seem to show the dependencies of the I-V characteristics on the various device parameters and applied bias voltages within a range of satisfactory accuracy.

• Journal of Korean Institute of Industrial Engineers
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• v.33 no.2
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• pp.191-200
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• 2007

We propose the QoS (Quality of Service) assurance model for AMR (Adaptive MultiRate) voice users considering the capacity and service quality jointly in downlink WCDMA system. For this purpose, we introduce a new system performance measure and the number-based AMR mode allocation scheme. The proposed number-based AMR mode allocation can be operated only with the information of total number of ongoing users. Therefore, it can be more simply implemented than the existing power-based allocation. The proposed system performance measure considers the stochastic variations of AMR modes of ongoing users and can be analytically obtained using CTMC (Continuous Time Markov Chain) modeling. In order to validate the proposed analytical model, a discrete event-based simulation model is also developed. The performance measure obtained from the analytical model is in agreement with the simulation results and is expected to be useful for parameter optimization.