• Biomedical Engineering Letters
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• 제8권4호
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• pp.383-392
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• 2018

For prompt gamma ray imaging for biomedical applications and environmental radiation monitoring, we propose herein a multiple-scattering Compton camera (MSCC). MSCC consists of three or more semiconductor layers with good energy resolution, and has potential for simultaneous detection and differentiation of multiple radio-isotopes based on the measured energies, as well as three-dimensional (3D) imaging of the radio-isotope distribution. In this study, we developed an analytic simulator and a 3D image generator for a MSCC, including the physical models of the radiation source emission and detection processes that can be utilized for geometry and performance prediction prior to the construction of a real system. The analytic simulator for a MSCC records coincidence detections of successive interactions in multiple detector layers. In the successive interaction processes, the emission direction of the incident gamma ray, the scattering angle, and the changed traveling path after the Compton scattering interaction in each detector, were determined by a conical surface uniform random number generator (RNG), and by a Klein-Nishina RNG. The 3D image generator has two functions: the recovery of the initial source energy spectrum and the 3D spatial distribution of the source. We evaluated the analytic simulator and image generator with two different energetic point radiation sources (Cs-137 and Co-60) and with an MSCC comprising three detector layers. The recovered initial energies of the incident radiations were well differentiated from the generated MSCC events. Correspondingly, we could obtain a multi-tracer image that combined the two differentiated images. The developed analytic simulator in this study emulated the randomness of the detection process of a multiple-scattering Compton camera, including the inherent degradation factors of the detectors, such as the limited spatial and energy resolutions. The Doppler-broadening effect owing to the momentum distribution of electrons in Compton scattering was not considered in the detection process because most interested isotopes for biomedical and environmental applications have high energies that are less sensitive to Doppler broadening. The analytic simulator and image generator for MSCC can be utilized to determine the optimal geometrical parameters, such as the distances between detectors and detector size, thus affecting the imaging performance of the Compton camera prior to the development of a real system.

• 전자공학회논문지A
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• 제32A권8호
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• pp.107-118
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• 1995

Three-dimensional simulator for thermal oxidation process is developed. The simulator is consisted by two individual module, one is analytic-model module and the other is numerical-model module. The analytic-model which uses simple complementary-error function guarantees fast calculation in prediction of multi-dimensional oxidation process. The numerical-model which is based on boundary element method (BEM), has a good accuracy and suitable for various process conditions. The results of this study show that oxide growth is retarded at the corner of hole structure and enhanced at the corner of island structure. These effects are reson of different distribution of oxidant diffusion and mask stress. The utility of models and simulator developed in this study is demonstrated by using it to predict not only traditional shape of LOCOS but also process effects in small geometry.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.344-346
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• 2016

본 논문에서는 3-stream model에 기반한 Dopant diffusion simulator를 사용하여 실리콘 기판 내부의 As이온의 확산을 시뮬레이션한 결과와 Dual-Pearson Analytic model에 기반하여 Ion implantation을 1-D doping simulation한 결과를 토대로 여러 공정 설계에서 diffusion simulator의 사용가능함을 확인하였다.

• Journal of Electrical Engineering and Technology
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• 제7권2호
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• pp.225-229
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• 2012

This paper proposes a reduced-scale simulator that can replace numerical analytic methods for the estimation of potential distribution caused by ground faults in various grounding systems. The simulator consists of a hemispherical electrolytic tank, a three-dimensional potential probe, a grounding electrode, and a data acquisition module. The potential distribution is measured using a potentiometer with a position-tracing function when a test current flows to the grounding electrode. Using the simulator, we could clearly analyze the potential distribution for a reduced- scale model by one-eightieth of the buried depth and length of the grounding rod and grounding grid. Once both the shape of the grounding electrode and the fault current are known, the actual potential distribution can be estimated.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.397-407
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• 2002

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

• 대한전자공학회논문지
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• 제27권10호
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• pp.78-88
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• 1990

본 논문은 다중 버스 상호 적속망을 갖는 다중처리기 시스템에서, 기억장치 접근 요구의 경쟁에 의하여 영향을 받는 시스템의 성능을 평가하기 위하여 이산 사건 모델을 구성하였다. 또한 시스템의 해석적 모델과 시뮬레이터 모델을 구성하여 해석적 모델의 결과와 시뮬레이터 모델의결과를 상호 검증하였다. 검증 방법으로는 프로세서의 수, 기억장치 모듈의 수, 버스의 수와 국부 기억장치 실패율을 입력인수로 하여 기억장치 밴드폭, 프로세서, 기억장치 모듈 및 버스의 이용율, 버스 상호 충돌의 정도를 결정할 수 있었다.　따라서 시스템을 설RP할 때 시뮬레이션을 통하여 입력인수의 상호작용을 해석함으로써 시스템의 성능을 평가할 수 있게 된다.

• 한국정보통신학회논문지
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• 제3권2호
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• pp.291-304
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• 1999

주 연구에서는 압전체에서의 IDT 변환기, 음향 반사기에 대한 전기 음향 모드의 결합 모드 방정식을 유도, 정리함으로써 SAW 공진기 필터의 결합 모드를 수학적으로 분석할 수 있는 모델링 방법을 소프트웨어 설계 모듈화하고, SAW 공진기 필터를 구성하고 있는 각 구성 요소에 대한 회로적인 결합 방법의 제안을 통하여 SAW 결합 모드 공진기 필터의 설계 및 시뮬레이션 방법을 제안하였다. 또한, 제작된 소프트웨어 설계 모듈을 시뮬레이션 소프트웨어 패키지화함으로써 설계자가 손쉽게 이동통신기기용 결합 모드 공진기 필터를 설계할 수 있도록 그래픽 사용자 인터페이스를 갖는 SAW 결합 모드 공진기 필터의 설계 시뮬레이터를 구현하였으며 이를 통하여 이동통신기기에서 사용할 수 있는 결합 모드 공진기 필터를 모의 설계하고 주파수 특성을 해석함으로써 그 응용 타당성을 제시하였다.

• 대한전기학회논문지:전력기술부문A
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• 제51권2호
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• pp.69-75
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• 2002

AVR parameter tuning for voltage control of power system generators has generally been performed with the analytic methods and the simulation methods, which mostly depend on off-line linear mathematical models of excitation control system. However, due to the nonlinear nature of excitation control system, excitation control system performance of the tuned Parameters using the above conventional tuning methods may not be appropriate for some operating conditions. This paper presents an AVR parameter tuning method using actual on-line data of the excitation control system with the parameter optimization technique. As this method utilizes on-line operating data of the target excitation control system not the mathematical model of the system, it can overcome the limitation of model uncertainty Problems in conventional method, and it can tune the AVR parameter set which gives desired performance at the operating conditions. For the verification of proposed tuning method, two case studies with scaled excitation systems and the real-time power system simulator are presented.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1349-1351
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• 1997

TFT2DS was utilized to provide the usefulness as an analytic and design tool. In this paper, the general effects of channel length of an inverted staggered amorphous silicon thin film transistor on its characteristics were investigated. The results obtained from these experiments would be adopted to the optimized device designs and advanced simulations of their electrical properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.325-327
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• 1997

TFT2DS was developed to provide the usability as an analytic and design tool. The static characteristics of a-Si TFTs demonstrated a good agreement between simulated and measured data. This paper shows that WDS can optimize the physical parameters of a-Si through sensitivity simulations and compute the static characteristics of a-Si TFTs.