• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.49-55
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• 2013

A high-voltage highly-integrated analog front-end (AFE) IC for medical ultrasound imaging applications is implemented using standard 0.18-${\mu}m$ CMOS process. The proposed AFE IC is composed of a high-voltage (HV) pulser utilizing stacked transistors generating up to 15 Vp-p pulses at 2.6 MHz, a low-voltage low-noise transimpedance preamplifier, and a HV switch for isolation between the transmit and receive parts. The designed IC consumes less than $0.15mm^2$ of core area, making it feasible to be applied for multi-array medical ultrasound imaging systems, including portable handheld applications.

• Journal of Korea Multimedia Society
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• v.6 no.2
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• pp.319-324
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• 2003

In this paper, a new wideband tunable analog element for multimedia system is proposed. The proposed active element is composed of the complementary cascode circuit which can extend transconductance of an element. Therefore, the unity gain frequency which is determined transconductance is increased than that of the conventional element. And then these results are verified by the 0.22$\mu\textrm{m}$ CMOS n-well parameter simulation. As a result, the gam and the unity gam frequency are 42dB and 200MHz on 2V supply voltage. And power dissipation of the designed element is 0.32mW.

• ETRI Journal
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• v.21 no.4
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• pp.1-8
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• 1999

Thick metal 0.8${\mu}m$ CMOS technology on high resistivity substrate(RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the performance of the RF circuits, MOSFET layout was optimized for high frequency operation and inductor quality was improved by modifying the technology. The fabricated 1.9 GHz LNA shows a gain of 15.2 dB and a NF of 2.8 dB at DC consumption current of 15mA that is an excellent noise performance compared with the offchip matched 1.9 GHz CMOS LNAs. The 900 MHz LNA shows a high gain of 19 dB and NF of 3.2 dB despite of the performance degradation due to the integrating of a 26 nH inductor for input match. The proposed RF CMOS technology is a compatibel process for analog CMOS ICs, and the monolithic LNAs employing the technology show a good and uniform RF performance in a five inch wafer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.61-70
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• 2009

A 10b 30MS/s pipelined ADC operating under 1V power supply is presented. It utilizes a switched-RC based input sampling circuit and a resistive loop to reset the feedback capacitor in the multiplying digital-to-analog converter (MDAC) for the low-voltage operation. Cascaded switched-RC branches are used to achieve accurate grain of the MDAC for the first stage and separate switched-RC circuits are used in the sub-ADC to suppress the switching noise coupling to the MDAC input The measured differential and integral non-linearities of the prototype ADC fabricated in a 0.13${\mu}m$, CMOS process are less than 0.54LSB and 1.75LSB, respectively. The prototype ADC achieves 54.1dB SNDR and 70.4dB SFDR with 1V supply and 30MHz sampling frequency while consuming 17mW power.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.1-7
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• 2007

The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.5C
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• pp.395-402
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• 2008

In this paper, an I/Q channel 12bits 40MS/s Pipeline Analog to Digital Converter that is able to apply to WLAN/WMAN system is proposed. The proposed ADC integrates DLL based duty-correction circuit which corrects the fluctuations in the duksty cycle caused by miniaturization of CMOS devices and faster operating speeds. It is designed as a 1% to 99% input clock duty cycle could be corrected to 50% output duty cycle. The prototype ADC is implemented in a $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process and dissipates 184mW at 1.8V single supply The SNDR of the proposed 12bit ADC is 52dB and SFDR of 59dBc(@Fs=20MHz, Fin=1MHz) is measured.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.4
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• pp.16-24
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• 2002

This work describes a 10b 120 MSample/s CMOS pipelined A/D converter(ADC) based on a merged-capacitor switching(MCS) technique for high signal processing speed and high resolution. The proposed ADC adopts a typical multi-step pipelined architecture to optimize sampling rate, resolution, and chip area, and employs a MCS technique which improves sampling rate and resolution reducing the number of unit capacitor used in the multiplying digital-to-analog converter (MDAC). The proposed ADC is designed and implemented in a 0.25 um double-poly five-metal n-well CMOS technology. The measured differential and integral nonlinearities are within ${\pm}$0.40 LSB and ${\pm}$0.48 LSB, respectively. The prototype silicon exhibits the signal-to-noise-and-distortion ratio(SNDR) of 58 dB and 53 dB at 100 MSample/s and 120 MSample/s, respectively. The ADC maintains SNDR over 54 dB and the spurious-free dynamic range(SFDR) over 68 dB for input frequencies up to the Nyquist frequency at 100 MSample/s. The active chip area is 3.6 $mm^2$(＝ 1.8 mm ${\times}$ 2.0 mm) and the chip consumes 208 mW at 120 MSample/s.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.8
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• pp.1227-1234
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• 2013

An analog array with a 1.2 double poly floating gate transistor has been developed with a standard CMOS fabrication process. The programming of each cell by means of an efficient control circuit eliminates the unnecessary erasing operation which has been widely used in conventional analog memories. It is seen that the path of the signal for both the programming and the reading is almost exactly the same since just one comparator supports both operations. It helps to eliminate the effects of the amplifier input-offset voltage problem on the output voltage for the read operation. In the array, there is no pass transistor isolating a cell of interest from the adjacent cells in the array. Instead of the extra transistors, one extra bias voltage, Vmid, is employed. The experimental results from the memory shows that the resolution of the memory is equivalent to the information content of at least six digital cells. Programming/erasing of each cell is achieved with no detectable disturbance of adjacent cells. Finally, the unique shape of the injector structure in a EEPROM is adopted as a cell of analog array. It reduces the programming voltage below the transistor breakdown voltage without any special fabrication process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.8A
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• pp.1259-1264
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• 1999

In this paper, the High-speed, Low-power Analog-Digital Conversion Archecture is porposed using the Pipelined archecture for High-speed conversion rate and the Successive-Approximation archecture for Low-power consumption. This archecture is the Successive-Approximation archecture using Pipelined Comparator array to change reference voltage during Holding Time. The Analog-to-Digital Converter for video processing is designed using 0.8${\mu}{\textrm}{m}$ CMOS tchnology. When an 6-bit 10MS/s Analog-to-Digital Converter is simulatined, the INL/DNL errors are $\pm$0.5/$\pm$1, respectively. The SNR is 37dB at a sampling rate of 10MHz with 100KHz sine input signal. The power consumption is 1.46mW at 10MS/s. When an 8-bit 10MS/s Analog-to Digital Converter is simulatined, the INL/DNL errors are $\pm$0.5/$\pm$1, respectively. The SNR is 41dB at a sampling rate of 100MHz with 100KHz sine input signal. The power consumption is 4.14m W at 10MS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.35-40
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• 2005

A digitally controlled phase-locked loop (DCPLL) is described. The DCPLL has basically the same structure as a conventional analog PLL except for a tracking analog-to-digital converter (ADC). The tracking ADC generates the control signal for voltage controlled oscillator. Since the DCPLL employs neither digitally controlled oscillator nor time-to-digital converter-the key building blocks of digital PLL (DPLL), there is no need for the 03de-off between jitter, power consumption and silicon area. The DCPLL was implemented in a $0.18\mu$m CMOS process and the active area is 1mm $\times$0.35 mm The DCPLL consumes S9mW during the normal opuation and $984\{mu}W$ during the power-down mode from a 1.8V supply. The DCPLL shows 16.8ps ms jitter.