• Title/Summary/Keyword: Amplifiers

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p-Toluenesulfonate Ester Derivatives of Benzendiol as Novel Acid Amplifiers (새로운 산증식제로 벤젠다이올의 p-톨루엔술폰산 에스터 유도체에 관한 연구)

  • Kang, Ji Eun;Hong, Kyoun Il;Lim, Kwon Taek;Jeong, Yeon Tae
    • Applied Chemistry for Engineering
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    • v.16 no.5
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    • pp.660-663
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    • 2005
  • Aiming the development of novel acid amplifiers, 2-hydroxyphenyl-4-methylbenzenesulfonate (1), 3-hydroxyphenyl-4-methylbenzene sulfonate (2), 4-hydroxyphenyl-4-methylbenzenesulfonate (3) were synthesized as the aromatic acid amplifiers with good thermal stability. They were autocatalytically generated p-toluenesulfonic acid in the presence of small amount of acid evolved from a photoacid generator. These aromatic sulfonates showed excellent thermal stability in PtBMA film and were proven to be the first aromatic acid amplifier to act as a photosensitivity enhancer. When these compounds were coupled with a chemically amplified photoresist system, photosensitivity was enhanced up to 3~6 folds.

On-chip Smart Functions for Efficiency Enhancement of MMIC Power Amplifiers for W-CDMA Handset Applications

  • Youn S. Noh;Kim, Ji H.;Kim, Joon H.;Kim, Song G.;Park, Chul S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.1
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    • pp.47-54
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    • 2003
  • New efficiency enhancement techniques have been devised and implemented to InGaP/GaAs HBT MMIC power amplifiers for W-CDMA mobile terminals applications. Two different types of bias current control circuits that select the efficient quiescent currents in accordance with the required output power levels are proposed for overall power efficiency improvement. A dual chain power amplifier with single matching network composed of two different parallel-connected power amplifier is also introduced. With these efficiency enhancement techniques, the implemented MMIC power amplifiers presents power added efficiency (PAE) more than 14.8 % and adjacent channel leakage ratio(ACLR) lower than -39 dBc at 20 dBm output power and PAE more than 39.4% and ACLR lower than -33 dBc at 28 dBm output power. The average power usage efficiency of the power amplifier is improved by a factor of more than 1.415 with the bias current control circuits and even up to a factor of 3 with the dual chain power amplifier.

A New Design-for-Testability Circuit for Low Noise Amplifiers (저잡음 증폭기를 위한 새로운 구조의 검사용 설계회로)

  • Ryu Jee-Youl;Noh Seok-Ho
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.3 s.345
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    • pp.68-77
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    • 2006
  • This paper presents a new Design-for-Testability (DfT) circuit for 4.5-5.5GHz low noise amplifiers (LNAs). The DfT circuit measures gain, noise figure, input impedance, input return loss, and output signal-to-noise ratio for the LNA without external expensive equipment. The DfT circuit is designed using 0.18m SiGe technology. The circuit utilizes input impedance matching and DC output voltage measurements. The technique is simple and inexpensive.

MEMS TUNING ELEMENTS FOR MICRO/MILLIMETER-WAVE POWER AMPLIFIERS (마이크로/밀리미터파 대역에서 전력증폭기의 효율향상을 위한 MEMS 튜닝회로)

  • Kim, Jae-Heung
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.118-121
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    • 2003
  • A new approach, using MEMS, for improving the performance of high efficiency amplifiers is proposed in this paper. The MEMS tuning element is described as a variable-length shorted CPW stub. Class-E amplifiers can be optimally tuned by these MEMS tuning elements because their operation varies with the impedance of the output tuning circuit. A MEMS tuning element was simulated using full-wave EM simulators to obtain its S-parameters. A Class-E amplifier with the MEMS was designed at 8GHz. The non-linear operation of this amplifier was simulated to explore the effect of the MEMS tuning. Comparing the initially designed amplifier without MEMS, the Power Added Efficiency (PAE) of the amplifier with MEMS is improved from 46.3% to 66.9%. For the amplifier with MEMS, the nonlinear simulation results are PAE = 66.90%, $\eta$(drain efficiency) = 75.89%, and $P_{out}$ = 23.37 dBm at 8 GHz. In this paper, the concept of the MEMS tuning element is successfully applied to the Class E amplifier designed with transmission lines.

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Poly[(1-methacryloyloxy-4-tosyloxycyclohexane)-co-(tert-butyl methacrylate)] as an acid amplifying photoresist (산 증식형 포토레지스트로 Poly($MTC_{10}-co-tBMA_{90}$)의 합성 및 특성 연구)

  • Kuen, Kyoung-A;Lee, Eun-Ju;Lim, Kwon-Taek;Jeong, Yong-Seok;Jeong, Yeon-Tae
    • Journal of the Korean Graphic Arts Communication Society
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    • v.20 no.2
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    • pp.131-140
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    • 2002
  • Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.

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Design of Hybrid Optical Amplifiers for High Capacity Optical Transmission

  • Kim, Seung-Kwan;Chang, Sun-Hyok;Han, Jin-Soo;Chu, Moo-Jung
    • ETRI Journal
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    • v.24 no.2
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    • pp.81-96
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    • 2002
  • This paper describes our design of a hybrid amplifier composed of a distributed Raman amplifier and erbium-doped fiber amplifiers for C- and L-bands. We characterize the distributed Raman amplifier by numerical simulation based on the experimentally measured Raman gain coefficient of an ordinary single mode fiber transmission line. In single channel amplification, the crosstalk caused by double Rayleigh scattering was independent of signal input power and simply given as a function of the Raman gain. The double Rayleigh scattering induced power penalty was less than 0.1 dB after 1000 km if the on-off Raman gain was below 21 dB. For multiple channel amplification, using commercially available pump laser diodes and fiber components, we determined and optimized the conditions of three-wavelength Raman pumping for an amplification bandwidth of 32 nm for C-band and 34 nm for L-band. After analyzing the conventional erbium-doped fiber amplifier analysis in C-band, we estimated the performance of the hybrid amplifier for long haul optical transmission. Compared with erbium-doped fiber amplifiers, the optical signal-to-noise ratio was calculated to be higher by more than 3 dB in the optical link using the designed hybrid amplifier.

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An X-Ku Band Distributed GaN LNA MMIC with High Gain

  • Kim, Dongmin;Lee, Dong-Ho;Sim, Sanghoon;Jeon, Laurence;Hong, Songcheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.6
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    • pp.818-823
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    • 2014
  • A high-gain wideband low noise amplifier (LNA) using $0.25-{\mu}m$ Gallium-Nitride (GaN) MMIC technology is presented. The LNA shows 8 GHz to 15 GHz operation by a distributed amplifier architecture and high gain with an additional common source amplifier as a mid-stage. The measurement results show a flat gain of $25.1{\pm}0.8dB$ and input and output matching of -12 dB for all targeted frequencies. The measured minimum noise figure is 2.8 dB at 12.6 GHz and below 3.6 dB across all frequencies. It consumes 98 mA with a 10-V supply. By adjusting the gate voltage of the mid-stage common source amplifier, the overall gain is controlled stably from 13 dB to 24 dB with no significant variations of the input and output matching.

Studies of MIMIC Power amplifier for millimeter-waves

  • Rhee, Eung-Ho;Yoon, Jin-seub;Cho, Seung-ki;Yoon, Jin-seub
    • Proceedings of the IEEK Conference
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    • 2000.07b
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    • pp.1009-1012
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    • 2000
  • In this paper, we have designed and fabricated power PHEMT’s with an unit gate width of 80$\mu\textrm{m}$ and 4 fingers, and MIMIC power amplifiers using the PHEMT’s as well. The PHEMT’s have a 0.2$\mu\textrm{m}$ gate length and source to drain spacing of 3$\mu\textrm{m}$. The characteristics of the fabricated PHEMT’s are 4.08dB of S$\sub$21/ gain at the 35GHz and 317mS/mm of gm, and 62GHz of f$\sub$T/ and 120GHz of f$\sub$max/. The designed and fabricated MIMIC’s power amplifiers with 6 PHEMT’s and MIN capacitors were fully passivated by 1000 Α of Si$_3$N$_4$ film for higher performance and surface protects. The chips were processed using the MINT processes, and size was 3.25 ${\times}$ 1.8$\textrm{mm}^2$. The fabricated MIMIC power amplifiers have RF characteristics such as 11.25dB of S$\sub$21/ gain, 11.37dB of input return-loss and 12.69dB of output return-loss at the 34.55GHz.

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A Design of a Data Predistorter for the Compensation of Nonlinearities in High Power Amplifiers for Satellite Communication (위성통신용 고출력 증폭기의 비선형성 보상을 위한 데이터 Predistorter의 설계)

  • 이제석;조용수;임용훈;이대희
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.10
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    • pp.1518-1526
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    • 1993
  • It has been known that the amplifiers for high power signal in satellite communication channels suffer from nonlinear distortions, which reduce the performance of the communication channel significantly. In order to compensate the nonlinear distortion, a new data predistortion method with the LMS algorithm is proposed in this paper, Whereas the previous approach handles this problem by assigning corresponding predistorter to each symbol for the case of 16-QAM, the proposed approach uses the same memory for the symbols, which have identical amplitudes, and predistors the input of high-power amplifiers by the amplitude and phase differences, resulting in better adaptive data predistorter with small number of digital memory (3 predistorters) and fast convergence rate. Superiority of the proposed approach in the paper is demonstrated by comparing it with the previous approach.

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Design of IMT-2000 Feedforward Digital Adaptive Linear Power Amplifier (IMT-2000 전방궤환 디지털 적응 선형전력증폭기 설계)

  • Kim, Kab-Ki;Park, Gyei-Kark
    • Journal of Navigation and Port Research
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    • v.26 no.3
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    • pp.295-302
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    • 2002
  • Currently digital communication system adapt various digital modulation schemes. All these communication systems are required to cause the minimum interference to adjacent channels, they must therefore employ the linear power amplifiers. In respect to linear power amplifiers, there are many linearization techniques. Feedforward power amplifier represent very wide bandwidth and high linearization capability. In the feedforward systems overall efficiency is reduced due to the loss of delay line. In this paper, delay filter instead of transmission delay line adapted to get more high efficiency. Experimental results showed that ACLR has improved 17.04dB which is added 2.54dB by using the delay filter.