Operating Characteristics of Amorphous GeSe-based Resistive Random Access Memory at Metal-Insulator-Silicon Structure (금속-절연층-실리콘 구조에서의 비정질 GeSe 기반 Resistive Random Access Memory의 동작 특성)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.29 no.7
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- pp.400-403
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- 2016