• 제목/요약/키워드: Amorphous Structure

검색결과 977건 처리시간 0.026초

Synthesis of Amorphous Matrix Nano-composite in Al-Cu-Mg Alloy

  • Kim, Kang Cheol;Park, Sung Hyun;Na, Min Young;Kim, Won Tae;Kim, Do Hyang
    • Applied Microscopy
    • /
    • 제44권3호
    • /
    • pp.105-109
    • /
    • 2014
  • The microstructure of as-quenched $Al_{70}Cu_{18}Mg_{12}$ alloy has been investigated in detail using transmission electron microscopy. Al nano-crystals about 5 nm with a high density are distributed in the amorphous matrix, indicating amorphous matrix nano-composite can be synthesized in Al-Cu-Mg alloy. The high density of Al nano-crystals indicates very high nucleation rate and sluggish growth rate during crystallization possibly due to limited diffusion rate of solute atoms of Cu and Mg during solute partitioning. The result of hardness measurement shows that the mechanical properties can be improved by designing a nano-composite structure where nanometer scale crystals are embedded in the amorphous matrix.

이종 물질의 접합계면에 의한 반도체 물질의 광학적 특성 (Optical Properties of Semiconductors Depending on the Contact Characteristic Between Different Groups)

  • 오데레사;노종구
    • 한국전기전자재료학회논문지
    • /
    • 제27권2호
    • /
    • pp.71-75
    • /
    • 2014
  • To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

Amorphous-$Si_xGe_y$을 seed layer로 이용한 Poly-Si TFT의 특성 (Characterization of Poly-Si TFT's using Amorphous-$Si_xGe_y$ for Seed Layer)

  • 정명호;정종완;조원주
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
    • /
    • pp.125-126
    • /
    • 2007
  • Polycrystalline silicon thin-film-transistors (Poly-Si TFT's) with a amorphous-$Si_xGe_y$ seed layer have been fabricated to improve the performance of TFT. The dependence of crystal structure and electrical characteristics on the the Ge fractions in $Si_xGe_y$ seed layer were investigated. As a result, the increase of grain size and enhancement of electrical characteristics were obtained from the poly-Si TFT's with amorphous-SixGey seed layer.

  • PDF

Colloidal Photonic Crystals with Quasi-Amorphous Structure: Angle-Independent Electrically Tunable Full Color Photonic Pixels

  • 김대현;정재연;지승욱;강영종
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
    • /
    • pp.278-278
    • /
    • 2010
  • Electrically tunable photonic band gap (PBG) materials based on crystalline structures have been developed for active components of display. Despite considerable advances, the intrinsic drawbacks of the crystalline PBG materials such as the strong angle dependent hue and difficulty of fabricating defect-free structures in large area have yet to be addressed for their practical applications. Here we report quasi-amorphous colloidal structures exhibiting angle-independent photonic colors in response to the electric stimuli. Moderately polydisperse colloidal Fe3O4@SiO2 nanoparticles dispersed in organic solvents exclusively form quasi-amorphous photonic materials at sufficiently high concentrations (> 30 wt%), and which reversibly reflect incident light in visible region ($\lambda$ peak = 490~655 nm) in response to the relatively low bias voltage (0~4 V). We show the angle-independent tunable photonic colors with the fast response time (50~170 ms) due to the isotropic nature of quasi-amorphous structures. Conventional vacuum injection technique is applicable for fabricating flexible full color photonic display pixels with various pre-defined shapes.

  • PDF

Joule-heating Induced Crystallization (JIC) of Amorphous Silicon Films

  • Ko, Da-Yeong;Ro, Jae-Sang
    • 마이크로전자및패키징학회지
    • /
    • 제25권4호
    • /
    • pp.101-104
    • /
    • 2018
  • An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

비정질 $(Ba, Sr)TiO_3$층의 도입을 통한 $(Ba, Sr)TiO_3$박막의 특성 향상 (The improvement in the properties of $(Ba, Sr)TiO_3$films by the application of amorphous layer)

  • 백수현;이공수;마재평;박치선
    • 한국결정성장학회지
    • /
    • 제8권2호
    • /
    • pp.221-226
    • /
    • 1998
  • $RuO_2$ 하부전극 상에 형성된 $(Ba, Sr)TiO_3$[BST] 박막의 물성을 향상시키기 위하여 비정질 BST층(30, 70nm)을 $RuO_2$와 BST사이에 증착하여 2중 BST구조를 형성시켰다. 비정질 BST층의 도입을 통해, BST박막의 평균 입도가 증가하고, 표면 거칠기가 감소하여 전체 BST 박막의 미세구조와 표면 mophology가 단일 BST박막에 비해 상당한 변화가 발생함을 확인하였다. 30nm의 비정질측이 적용된 BST박막의 경우, 하부기판의 영향으로부터 비교적 자유로운 미세구조를 갖는 BST 박막이 형성되었다. 2중 BST 박막의 경우 유전상수는 340, 누설전류는 $6.85{\times}10^{-7}A/{\textrm}{cm}^2$로서 비정질층을 갖지 않는 단일 BST 박막에 비하여(유전상수: 152, 누설전류: $1.25{\times}10^{-5}A/{\textrm}{cm}^2$)놀라운 전기적 특성의 향상이 이루어짐을 확인하였다.

  • PDF

비정질 할로이사이트 나노입자의 교차적층 구조에 따른 탄소섬유/에폭시 라미네이트의 저속 충격 특성 (Low Velocity Impact Property of CF/Epoxy Laminate according to Interleaved Structure of Amorphous Halloysite Nanotubes)

  • 박예림;;김윤해
    • Composites Research
    • /
    • 제36권4호
    • /
    • pp.270-274
    • /
    • 2023
  • 필라멘트 와인딩 공정을 사용한 FRP 복합재의 적층 구조는 기존의 FRP 복합재의 적층 구조와는 다를 뿐만 아니라 일반적인 적층 구조를 토대로 기계적 물성에 대해서 분석하고자 한다면 그에 대한 영향을 파악하는 것이 어렵다. 따라서 전반적인 성능을 향상시키기 위해 기계적 물성을 개선하고 교차 적층 구조를 최적화하는 것이 필수적이다. 따라서 본 연구는 비정질 할로이사이트 나노튜브(Amorphous Halloysite Nanotubes, A-HNT)를 5개의 층 배열을 통해 교차 적층 탄소 섬유 강화 플라스틱(CFRP) 구조의 저속 충격 특성에 미치는 영향을 조사하는 것을 목표로 한다. 중량 낙하식 충격시험을 통하여 라미네이트의 저속 충격 특성을 확인하였으며, 충격을 가한 후에 현미경을 통하여 충격 파손 모드와 손상 정도를 비교 평가하였다. 나노 입자의 첨가 여부에 따른 각각의 교차 적층 구조 라미네이트를 10 J과 15 J의 충격에너지에서 비교하였다. 10 J의 경우 흡수에너지는 각 구조에서 비슷한 경향을 보였다. 그에 비해 15 J의 경우 흡수에너지는 각 구조에서 다른 흡수에너지를 가지며, 나노 입자가 첨가되지 않은 구조가 가장 높은 흡수에너지를 가진다. 또한 광학현미경을 통하여 각 구조에서 다양한 충격 파손 모드가 관찰되었다.

PRAM을 위한 (GeTe)x(Sb2Te3) (x=0.5, 1, 2, 8) 박막의 물성 및 상변환 특성 연구 (A Study On Properties and Phase Change Characteristics of (GeTe)x(Sb2Te3) (x=0.5, 1, 2, 8) Thin Films for PRAM)

  • 김성원;송기호;이현용
    • 한국전기전자재료학회논문지
    • /
    • 제21권7호
    • /
    • pp.585-593
    • /
    • 2008
  • In this work, we report several experimental data capable of evaluating the phase transformation characteristics of GeSbTe pseudobinary thin films comprehensively utilized as phase change materials. The phase transformation of the GeSbTe thin films was confirmed by XRD measurement from amorphous to hexagonal structure via fee structure except for $Ge_8Sb_2Te_{11}$. In addition, X-ray photoelectron spectra analysis revealed to weaken Ge-Te bond for $Ge_2Sb_2Te_5$ and to strengthen the bonds of all elements for $Ge_8Sb_2Te_{11}$ during the amorphous to crystalline transition. The values of optical energy gap $(E_{OP})$ were around 0.71 and 0.50 eV and the slopes of absorption in extended region (B) were ${\sim}5.1{\times}10^5$ and ${\sim}10{\times}10^5cm^{-1}{\cdot}V^{-1}$ for the amorphous and fcc-crystalline structures, respectively. Finally, the kinetics of amorphous-to-crystalline phase change on the GeSbTe films was characterized using a nano-pulse scanner with 658-nm laser diode (power; $1{\sim}17$ mW, pulse duration; $10{\sim}460$ ns).

결정형이 생체이용률에 미치는 영향 (Effect of Crystal Form on Bioavailability)

  • 손영택
    • Journal of Pharmaceutical Investigation
    • /
    • 제34권6호
    • /
    • pp.443-452
    • /
    • 2004
  • Habit is the description of the outer appearance of a crystal. If the environment of a growing crystal affects its external shape without changing its internal structure, a different habit results. Crystal habit and the internal structure of a drug can affect bulk and physicochemical properties, which range from flowability to chemical stability. A polymorph is a solid crystalline phase of a given compound resulting from the possibility of at least two different arrangements of the molecules of that compound in the solid state. Chemical stability and solubility changes due to polymorphism can have an impact on a drug's bioavailability and its development program. During crystallization from a solution, crystals separating may consist of a pure component or be a molecular compound. Solvates are molecular complexes that have incorporated the crystallizing solvent molecule in their lattice. When the solvent incorporated in the solvate is water, it is called a hydrate. To distinguish solvates from polymorphs, which are not molecular compounds, the term pseudopolymorph is used. Identification of possible hydrate compounds is important since their aqueous solubilities can be significantly less than their anhydrous forms. Conversion of an anhydrous compound to a hydrate within the dosage form may reduce the dissolution rate and extent of drug absorption. An amorphous solid may be treated as a supercooled liquid in which the arrangement of molecules is random. Amorphous solids lack the three-dimensional long-range order found in crystalline solids. Since amorphous forms are usually of higher thermodynamic energy than corresponding crystalline forms, solubilities as well as dissolution rates are generally greater. A study on crystal form includes characterization of (l)crystal habit, (2)polymorphism, (3)pseudopolymorphism, (4)amorphous solid.

고속도금된 3가 크롬도금의 전류효율 및 조직특성에 미치는 첨가제의 영향 (The Effect of Additives on the Current Efficiency and the Microstructure of Trivalent Cr Electrodeposits Plated in Flow Cell System)

  • 예길촌;서경훈
    • 한국표면공학회지
    • /
    • 제37권2호
    • /
    • pp.92-98
    • /
    • 2004
  • The current efficiency and the microstructure of the trivalent Cr deposits plated in flow cell system were investigated according to additives in sulfate bath and current density. The current efficiency of the deposits plated in the formic acid complexed bath was noticeably higher than that of the deposits from glycine complexed bath. The current efficiency of the deposits from the complexed baths with boric acid buffer increased linearly with current density in the range of 60-100 A/dm$^2$, while that of the deposits from the baths with both Al sulfate and mixed buffers increased parabolically with current density. The nodular crystallite size of the deposits increased with current density, and the deposits plated in low current density region had relatively smooth surface appearance with fine grains. The structure of the deposits from the complexed baths with boric acid buffer changed from amorphous structure to crystalline one with strong (110)peak with increasing current density. The deposits from the baths with both Al sulfate and mixed buffers had generally amorphous structure.